Fabrication of periodic array of silicide quantum dot in silicon substrate by metallic ion implantation

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Fabrication of periodic array of silicide quantum dots in silicon wafer were carried out by means of ion implantation and direct wafer bonding. It was clarified that nodes of the screw dislocation network act as the preferential nucleation sites for the precipitate in silicon. The periodic array of silicon dioxide quantum dots was successfully fabricated by present method. It was suggested that low-damage ion implantation technique is required to make the silicide quantum dot array, because the surface degradation strongly affect to the feasibility of wafer bonding.