Fabrication of periodic array of silicide quantum dot in silicon substrate by metallic ion implantation

金属离子注入在硅衬底上制作周期性硅化物量子点阵列

• 批准号: 23651087
• 负责人: SAKAGUCHI Norihito
• 金额: $ 2.58万
• 依托单位: Hokkaido University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2012
• 资助国家: 日本
• 起止时间: 2012 至 无数据
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23651087/
• 关键词: 表面; 界面ナノ構造; 量子構造; ウェハ直接接合; イオン注入; らせん転位網; ナノ粒子規則配列

Fabrication of periodic array of silicide quantum dots in silicon wafer were carried out by means of ion implantation and direct wafer bonding. It was clarified that nodes of the screw dislocation network act as the preferential nucleation sites for the precipitate in silicon. The periodic array of silicon dioxide quantum dots was successfully fabricated by present method. It was suggested that low-damage ion implantation technique is required to make the silicide quantum dot array, because the surface degradation strongly affect to the feasibility of wafer bonding.

采用离子注入和直接键合的方法在硅片上制备了周期性硅化物量子点阵列。结果表明，螺位错网络的节点是硅中沉淀物的优先形核位置。利用该方法成功制备了二氧化硅量子点周期阵列。由于硅化物量子点阵列的表面退化严重影响着其键合的可行性，因此需要采用低损伤的离子注入技术来制备硅化物量子点阵列。

项目成果

イオン注入およびウェハ直接接合を用いた埋め込み量子構造作製手法の検討

采用离子注入和晶圆直接键合的掩埋量子结构制造方法的研究

• 发表时间: 2012
• 作者: 坂口紀史;大森ちひろ;村上優;渡辺精一
• 通讯作者: 渡辺精一