Growth of free-standing two-dimensional atomic sheet by nano-plasma processing and its applications

纳米等离子体生长自支撑二维原子片及其应用

• 批准号: 23740405
• 负责人: KATO Toshiaki
• 金额: $ 2.91万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23740405/
• 关键词: 単層カーボンナノウォール; 垂直配向; グラフェン; プラズマCVD; キャリア移動度

Direct growth of graphene on an insulating substrate is realized by rapid-heating plasma CVD (RH-PCVD), which is originally developed by our group. For the first time, integration of graphene nanoribbons, quasi-one-dimensional structure of graphene, is also realized using Ni nanobar as catalysts for their growth. It is also revealed that the graphene nanoribbon devices show very high transistor performance (on/off ratio > 10,000).

石墨烯在绝缘衬底上的直接生长是通过快速加热等离子体CVD （RH-PCVD）实现的，该技术是本课程组最初开发的。利用镍纳米棒作为石墨烯纳米带生长的催化剂，首次实现了石墨烯准一维结构石墨烯纳米带的集成。石墨烯纳米带器件具有非常高的晶体管性能（开/关比bbb10 000）。

项目成果

Direct Growth of High-Quality Mono-Layer Graphene on Insulating Substrate by Advanced Plasma CVD

采用先进等离子体 CVD 在绝缘基板上直接生长高质量单层石墨烯

• 发表时间: 2012
• 作者: Setiawan;N.;Osanai;Y.;Nakano;N.;Adachi;T.;Yonemura;K.;et al;吉岡 七緒;Maki Okube and Satoshi Sasaki;Katsuo Tsukamoto;T. Kato
• 通讯作者: T. Kato

Plasma processing of nanomaterials

• DOI: 10.1201/b11473
• 发表时间: 2012
• 作者: R. M. Sankaran

Effects of Catalysts Types on the Narrow-Chirality Distributed Single-Walled Carbon Nanotube Growth by Plasma CVD

催化剂类型对等离子体 CVD 窄手性分布单壁碳纳米管生长的影响

• 发表时间: 2011
• 作者: 伊藤 陽介;大西 宏征;鎌田 啓吾;小林 哲生;三木康稔，天野祐介，高橋拓也，佐々木徹，菊池崇志，原田信弘;T. Sato;K. Murakoshi
• 通讯作者: K. Murakoshi

グラフェン構造体及びそれを用いた半導体装置並びにそれらの製造方法

石墨烯结构、使用其的半导体器件及其制造方法

• 发表时间: 2012

Narrow-Chirality Distributed Growth of Single-Walled Carbon Nanotubes from Nonmagnetic Catalyst by Diffusion Plasma CVD

通过扩散等离子体 CVD 从非磁性催化剂中窄手性分布生长单壁碳纳米管

• 发表时间: 2011
• 作者: 藤田雅大;斎藤雅一;Masanori Tachikawa;Y. F. Li;K. Murakoshi
• 通讯作者: K. Murakoshi