Fabrication of single-crystalline AlN layer using a novel LPE technique and discussion of the growth mechanism

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AlN is a promising substrate material for AlGaN-based deep UV-LED. Recently, authors investigate an original liquid phase epitaxial growth technique using Ga-Al solution. In this study, it was clarified the role of oxygen in the liquid phase epitaxy technique, and, based on the results, growth mechanism of this technique was discussed. Moreover, we have attempted to grow AlN on nitrided a-plane sapphire template. In consequence, high-quality AlN layer successfully grew using nitrided a-plane sapphire.