印刷できるＬＳＩ用有機単結晶半導体トランジスタの物理モデル開発

电荷从金属注入到半导体中是每一个使用有机半导体器件的关键步骤。了解这一过程对于进一步提高器件性能是必要的。去年，我们分析了大约20个存在明显电荷注入问题的晶体管。通过将这些结果与自行开发的漂移扩散求解器相结合，我们已经能够解释其中的一些结果。进一步实现物理过程，使我们能够解释观察到的注入行为。从这些模型出发，我们开发了一个简化版本，可以解析求解。该模型已在SPICE仿真包中实现。第一次调查非常有希望。

Charge injection from the metal into the semiconductor is a crucial step in every device using organic semiconductors. Understanding this process is necessary to further improve device performance. In the last year, we analyzed a about 20 transistors with a very distinct charge injection problem. By combining these results with a self developed drift diffusion solver we have been able to explain some of these results. Further implementation of physical processes, allowed us to explain the observed injection behavior.Starting from these models, we have developed a simplified version, which can be solved analytically. This model has been implemented into a SPICE simulation package. The first Investigations have been very promising.