触媒表面基準エッチングによるＳｉＣ加工のメカニズム解明

通过催化剂表面参考蚀刻阐明 SiC 加工机理

• 批准号: 16J06391
• 负责人: ブイ フォー ヴァン
• 金额: $ 1.47万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for JSPS Fellows
• 财政年份: 2016
• 资助国家: 日本
• 起止时间: 2016-04-22 至 2018-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-16J06391/
• 关键词: Planarization; Etching; Surface reaction; Catalyst; Surface cleaning

By the elucidation of the mechanism of Water-CARE conducted in the first year, the intermediate state of CARE reaction is stabilized by chemical bonds between O of OH (adsorbed on a targeted Si) and a catalytic metal. Thanks to this stabilization, the activation energy is reduced and the CARE reaction is possible to occur at the room temperature. This year, by tuning this chemical bond with O using different catalysts, we observed a clear dependence of the removal rate on this binding energy. When this binding energy is too low, the reaction is not promoted. Therefore, the removal rate is low. When this binding energy is too high, the catalytic activity is reduced due to the poisoning. Thus, the removal rate is also slow. For the optimization of the catalyst performance, we proposed using an alloy catalyst and gained significant results. Additionally, experimental results showed that Water-CARE is also effective for GaN, a nitrite semiconductor. In parallel, we clarified the mechanism of the GaN etching by first-principles calculation. As a result, it was revealed that Water-CARE of GaN can be progressed by the hydrolysis reaction which is similar to that of the SiC etching. The present results are currently being prepared for publication.

通过阐明第一年进行的水-CARE反应的机理，CARE反应的中间态通过OH中的O（吸附在目标Si上）与催化金属之间的化学键稳定。由于这种稳定性，活化能降低，CARE反应可能在室温下发生。今年，通过使用不同的催化剂调整这种与O的化学键，我们观察到了去除率对这种结合能的明显依赖性。当该结合能太低时，不能促进反应。因此，去除率低。当该结合能过高时，催化活性由于中毒而降低。因此，去除速度也很慢。为了优化催化剂的性能，我们提出了使用合金催化剂，并取得了显著的效果。此外，实验结果表明，Water-CARE对GaN（一种亚硝酸盐半导体）也有效。同时，我们通过第一性原理计算阐明了GaN刻蚀的机理。结果，揭示了GaN的Water-CARE可以通过与SiC蚀刻类似的水解反应进行。目前正在准备公布这些结果。

项目成果

Planarization of SiC and oxide surfaces by using Catalyst-Referred Etching with water

使用催化水蚀刻对 SiC 和氧化物表面进行平坦化

• 发表时间: 2017
• 作者: Takuya Kobayashi;and Atsushi Kawamoto;Pho Van Bui
• 通讯作者: Pho Van Bui

Wet-Chemical Planarization of SiC Wafers for Advanced Optoelectronics Applications

用于先进光电应用的 SiC 晶圆湿法化学平坦化

• 发表时间: 2016
• 作者: Takuya Kobayashi;and Atsushi Kawamoto;Bui Pho Van;Pho Van Bui
• 通讯作者: Pho Van Bui

Platinum-catalyzed hydrolysis etching of SiC in water: A density functional theory study

水中碳化硅的铂催化水解蚀刻：密度泛函理论研究

• DOI: 10.7567/jjap.57.055703
• 发表时间: 2018
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Pho Van Bui;Daisetsu Toh;Ai Isohashi;Satoshi Matsuyama;Kouji Inagaki;Yasuhisa Sano;Kazuto Yamauchi and Yoshitada Morikawa
• 通讯作者: Kazuto Yamauchi and Yoshitada Morikawa

Wet Chemical Planarization of SiC Surface

SiC 表面的湿法化学平坦化

• 发表时间: 2016
• 作者: Bui Van Pho

Chemical etching of silicon carbide in pure water by using platinum catalyst

• DOI: 10.1063/1.4983206
• 发表时间: 2017-05-15
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Isohashi, Ai;Bui, P. V.;Yamauchi, K.
• 通讯作者: Yamauchi, K.