Operation of resonant-tunnelling diodes (RTDs) beyond tunnel-lifetime limit and THz sources on the basis of the diodes
Operation of resonant-tunnelling diodes (RTDs) beyond tunnel-lifetime limit and THz sources on the basis of the diodes
批准号:
77350520
负责人:
Dr. Michael Feiginov
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Grants
财政年份:
2008
资助国家:
德国
项目状态:
已结题
起止时间:
2007-12-31 至 2011-12-31
中文摘要
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英文摘要
We have predicted theoretically in the past, that the operating frequencies of RTDs are limited neither by their tunnel life time () nor by the tunnel relaxation time (rel) and that properly designed RTDs should have negative differential conductance at the frequencies far beyond the limits imposed by both time constants, i.e., the RTD oscillators should be realizable beyond those limits. The experimental demonstration of the theoretical predictions at the frequencies up 12 GHz has been done by us several years ago. In the first phase of the present project, we have already demonstrated the RTD oscillators with ω up to 3.0 and ωrel up to 6.8 at 109 GHz and the highest oscillation frequency was 150 GHz till now. The aim of the second phase of the project is to demonstrate that RTD oscillators can work also at THz frequencies in the regime ωrel >1 and ω>1 and even in the regime ωrel >>1 and ω>>1. Basically, the aim is to learn how to bring the RTDs to oscillations at their highest possible frequency (particularly in the THz range) and how to design the RTDs properly for that. That should also lead us to realization of the THz oscillators with the operating frequency beyond the present state of the art (831 GHz). We are convinced that this goal will be achieved in the second phase of the project. On one hand, the subject of our project is turning around the issue of clarifying the fundamental limitations of RTDs and it is relevant also to other related electronic devices, like, multi-barrier structures, quantum-cascade lasers, single-electron transistors, etc. On the other hand, the subject has a strong application oriented component. As an outcome of our project an enabling key technology for extremely compact THz sources emerges. The THz sources we are investigating could be sub-mm in dimensions and also potentially cheap. Such kind of sources can revolutionize certain types of THz applications. E.g., the technology of such sources would be an enabling technology for compact THz sensors, spectrometers, etc. No comparably compact and simple THz sources exist. That could be important for all the fields, where THz technology might find application: auto-industry, medicine, biotechnology, product quality control, security, military, communication, etc.
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RTD-based THz-MIC by Film-Diode technology
采用薄膜二极管技术的基于 RTD 的 THz-MIC
DOI:
10.1109/mwsym.2012.6259589
发表时间:
2012
期刊:
2012 IEEE/MTT-S International Microwave Symposium Digest
影响因子:
--
作者:
[O. Cojocari, C. Sydlo, M. Feiginov, P. Meissner]
通讯作者:
P. Meissner
Operation of resonant-tunnelling oscillators beyond tunnel lifetime limit
谐振隧道振荡器的运行超出隧道寿命极限
DOI:
10.1209/0295-5075/94/48007
发表时间:
2011
期刊:
EPL (Europhysics Letters)
影响因子:
--
作者:
[M. Feiginov, C. Sydlo, O. Cojocari, P. Meissner]
通讯作者:
P. Meissner
DOI:
10.1063/1.3644491
发表时间:
2011-09-26
期刊:
APPLIED PHYSICS LETTERS
影响因子:
4
作者:
[Feiginov, Michael, Sydlo, Cezary, Meissner, Peter]
通讯作者:
Meissner, Peter
DOI:
10.1063/1.3667191
发表时间:
2011-12-05
期刊:
APPLIED PHYSICS LETTERS
影响因子:
4
作者:
[Feiginov, Michael, Sydlo, Cezary, Meissner, Peter]
通讯作者:
Meissner, Peter
海外基金