Engineered resonant tunnelling nanostructures for the Terahertz realm

用于太赫兹领域的工程共振隧道纳米结构

• 批准号: EP/K018930/1
• 负责人: Ivona Mitrovic
• 金额: $ 12.19万
• 依托单位: University of Liverpool
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2013
• 资助国家: 英国
• 起止时间: 2013 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FK018930%2F1
• 关键词: Engineered; resonant; tunnelling; nanostructures; Terahertz

The engineering of the metal/insulator nanostructures capable of harnessing THz energy is the central aim of this project. The challenge lies in tuning the barrier heights at the metal/insulator interfaces for optimal terahertz energy conversion. Instrumental in achieving this ambitious goal is thorough understanding of interfacial barrier formation and correlation of physical and electrical properties of proposed nanostructures. The nanostructures will be fabricated using atomic layer deposition (ALD). The ALD deposition system enables a controlled microstructure, leading to better uniformity and control of the tunnelling barriers' composition and thickness, as well as interface integrity and stability. The target is addressed in three coupled work phases, which are strongly linked, and entail voluminous theoretical and experimental study with a wide range of characterization techniques. The successful outcome of the project will facilitate an emerging technology and complement research efforts at Manchester University and Imperial College in the UK to bring about new efficient electronic devices for terahertz energy harvesting in infrared and visible domain.

能够利用太赫兹能量的金属/绝缘体纳米结构的工程是该项目的中心目标。挑战在于调整金属/绝缘体界面处的势垒高度，以实现最佳的太赫兹能量转换。实现这一雄心勃勃的目标的工具是深入了解界面势垒的形成和相关的物理和电学性质的纳米结构。纳米结构将使用原子层沉积（ALD）制造。ALD沉积系统能够实现受控的微结构，从而导致隧穿势垒的组成和厚度的更好的均匀性和控制，以及界面完整性和稳定性。该目标是在三个耦合的工作阶段，这是密切相关的，并需要大量的理论和实验研究与广泛的表征技术。该项目的成功成果将促进一项新兴技术，并补充英国曼彻斯特大学和帝国理工学院的研究工作，为红外和可见光领域的太赫兹能量收集带来新的高效电子设备。

项目成果

Applicability of Sc2O3 versus Al2O3 in MIM rectifiers for IR rectenna

• DOI: 10.1016/j.sse.2021.108082
• 发表时间: 2021-06-04
• 期刊: SOLID-STATE ELECTRONICS
• 影响因子: 1.7
• 作者: Almalki, S.;Tekin, S. B.;Mitrovic, I. Z.
• 通讯作者: Mitrovic, I. Z.

(Invited) Tunnel-Barrier Rectifiers for Optical Nantennas

（特邀）光学天线用隧道势垒整流器

• DOI: 10.1149/07202.0287ecst
• 发表时间: 2016
• 期刊: ECS Transactions
• 作者: Mitrovic I

Bionic artificial synaptic floating gate transistor based on Mxene

• DOI: 10.1016/j.sse.2022.108257
• 发表时间: 2022-02
• 期刊: Solid-State Electronics
• 影响因子: 1.7
• 作者: Y.X. Cao;C. Zhao;Z.J. Liu;X.P. Chen;I. Mitrovic;Y.N. Liu;L. Yang;H. van Zalinge;C.Z. Zhao

Alloyed Cu/Si core-shell nanoflowers on the three-dimensional graphene foam as an anode for lithium-ion batteries

• DOI: 10.1016/j.electacta.2019.03.071
• 发表时间: 2019-05
• 期刊: Electrochimica Acta
• 影响因子: 6.6
• 作者: Chenguang Liu;Yinchao Zhao;Ruowei Yi;Yi Sun;Yinqing Li;Li Yang;I. Mitrovic;Stephen Taylor;P. Chalker;Cezhou Zhao

Engineered Ta2O5/Al2O3 and Nb2O5/Al2O3 tunnel barriers for next-generation low turn-on voltage high-speed rectifiers

用于下一代低开启电压高速整流器的工程 Ta2O5/Al2O3 和 Nb2O5/Al2O3 隧道势垒

• 发表时间: 2015
• 作者: Mitrovic IZ