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Development of an apparatus for electron beam assisted chemical machining of diamond tools

Development of an apparatus for electron beam assisted chemical machining of diamond tools
金刚石工具电子束辅助化学加工装置的研制
批准号:
09650148
负责人:
MIYAMOTO Iwao
金额:
$1.98万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1998

项目摘要

项目成果

MIYAMOTO Iwao的其他基金

相关文献

中文摘要
翻译
首先,研制了电子束辅助化学加工(EBACE)装置。在此基础上,研究了EBACE加工金刚石的特点,为EBACE在超精密金刚石工具加工中的应用以及在电子金刚石器件中勾画出精细图形奠定了基础。去年,我们开发了在钻石探头顶部制作三维轮廓的加工阶段。实验结果表明:(1)在氢气和氧气气氛中,成功地制作了孔、线和矩形图形。(2)在氢气气氛中制作矩形图形时,刻蚀深度与刻蚀时间成正比,并且刻蚀深度随束流扫描速度和加速电压的降低而增加。(3)从拉曼光谱可以看出,EBACE加工的单晶金刚石芯片没有损伤。(4)利用所研制的加工平台,成功地制作了金刚石探头顶部的三维凸起。此外,电子钻石装置中还描绘了精细的图案。
英文摘要
At first, we developed an apparatus for the electron beam assisted chemical machining (EBACE). Then, machining characteristics of diamond by the EBACE was investigated in order to apply the EBACE to finishing ultra-precision diamond tools and to delineating fine patterns into electronic diamond devices. Last year, we developed the machining stage for making the three dimensional profile on the top of a diamond probe. From the experiments, following results are obtained.(1) Hole, line and rectangular patterns were successfully fabricated by EBACE with hydrogen and oxygen gases.(2) In the case of fabrication of the rectangular pattern with hydrogen gas, the etched depths are proportional to the etching time also the etched depth increases with a decrease of the heam scan speed and acceleration voltage of beam.(3) From Raman spectroscopy, it is conclude that the single crystal diamond chip machined with EBACE has no damage.(4) The three dimensional protrusion on the top of a diamond probe was successfully fabricated utilizing the developed machining stage. Moreover, fine patterns were delineated into electronic diamond devices.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
J.Taniguchi, et al.: "Electron Beam Assisted Chemical Etching of Single-Crystal Diamond Substrates with Hydrogen Gas" Jpn.J.Appl.Phys.36,12B. 7691-7695 (1977)
J.Taniguchi 等人:“用氢气电子束辅助化学蚀刻单晶金刚石基板”Jpn.J.Appl.Phys.36,12B。
DOI: --
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通讯作者:
J.Taniguchi, I.Miyamoto et al.: "Utilizing of hydrocarbon contamination for prevention of the surface charge-up at electron-beam assisted chemical etching of a diamond chip"Nuclear Instruments and Methods in Physics Research B. 121. 507-509 (1977)
J.Taniguchi、I.Miyamoto 等人:“利用碳氢化合物污染防止电子束辅助化学蚀刻金刚石芯片时的表面充电”《核物理研究仪器和方法》B. 121. 507-509
DOI: --
发表时间:
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通讯作者:
J. Taniguchi and I. Miyamoto et al.: "Utilizing of hydrocarbon contamination for prevention of the surface charge-up at electron-beam assisted chemical etching of a diamond chip"Nuclear Instruments and Methods in Physics Research B. 121. 507-509 (1997)
J. Taniguchi 和 I. Miyamoto 等人:“利用碳氢化合物污染防止电子束辅助化学蚀刻金刚石芯片时的表面充电”核物理研究仪器和方法 B. 121. 507-509
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
J.Taniguchi, I.Miyamoto et al.: "Electron Beam Assisted Chemical Etching of Single-Crystal Diamond Substrates with Hydrogen Gas"Japanese Journal of Applied Physics. 36. 7691-7695 (1997)
J.Taniguchi、I.Miyamoto 等人:“用氢气电子束辅助化学蚀刻单晶金刚石基板”日本应用物理学杂志。
DOI: --
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共 9 条
    Reactive Ion Beam Machining of Diamond Tools
    • 批准号:
      05650126
    • 项目类别:
      Grant-in-Aid for General Scientific Research (C)
    • 资助金额:
      $1.47万
    • 财政年份:
      1993
    • 负责人:
      MIYAMOTO Iwao
    • 依托单位:
    Study on Ion Beam Machining of Diamond Knives for Ultra-Microtomes
    • 批准号:
      03650114
    • 项目类别:
      Grant-in-Aid for General Scientific Research (C)
    • 资助金额:
      $1.28万
    • 财政年份:
      1991
    • 负责人:
      MIYAMOTO Iwao
    • 依托单位:
    Study of Ion Beam Machining of Single Point Diamond Tools for Ultra-Precision Turning
    • 批准号:
      63550109
    • 项目类别:
      Grant-in-Aid for General Scientific Research (C)
    • 资助金额:
      $1.28万
    • 财政年份:
      1988
    • 负责人:
      MIYAMOTO Iwao
    • 依托单位:
    Study on Ion Beam Machining of Diamond Tools
    • 批准号:
      60550098
    • 项目类别:
      Grant-in-Aid for General Scientific Research (C)
    • 资助金额:
      $0.96万
    • 财政年份:
      1985
    • 负责人:
      MIYAMOTO Iwao
    • 依托单位: