Development of an apparatus for electron beam assisted chemical machining of diamond tools

金刚石工具电子束辅助化学加工装置的研制

• 批准号: 09650148
• 负责人: MIYAMOTO Iwao
• 金额: $ 1.98万
• 依托单位: Tokyo University of Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650148/
• 关键词: Diamond tools; Electron beam assisted chemical etching apparatus; Diamond electronic devices; Diamond probe; Three dimensional profile generation; Fine pattern; ダイヤモンド; 電子ビーム援用化学加工; 穴,線,矩形パターン; 酸素ガス; 水素ガス; 損傷; 超微細加工; ラマン分光

At first, we developed an apparatus for the electron beam assisted chemical machining (EBACE). Then, machining characteristics of diamond by the EBACE was investigated in order to apply the EBACE to finishing ultra-precision diamond tools and to delineating fine patterns into electronic diamond devices. Last year, we developed the machining stage for making the three dimensional profile on the top of a diamond probe. From the experiments, following results are obtained.(1) Hole, line and rectangular patterns were successfully fabricated by EBACE with hydrogen and oxygen gases.(2) In the case of fabrication of the rectangular pattern with hydrogen gas, the etched depths are proportional to the etching time also the etched depth increases with a decrease of the heam scan speed and acceleration voltage of beam.(3) From Raman spectroscopy, it is conclude that the single crystal diamond chip machined with EBACE has no damage.(4) The three dimensional protrusion on the top of a diamond probe was successfully fabricated utilizing the developed machining stage. Moreover, fine patterns were delineated into electronic diamond devices.

首先，我们开发了一种电子束辅助化学加工（EBACE）设备。然后，研究了EBACE对金刚石的加工特性，以便将EBACE应用于超精密金刚石工具的精加工以及在电子金刚石装置中描绘精细图案。去年，我们开发了用于在金刚石探针顶部制作三维轮廓的加工平台。通过实验，得到以下结果：(1)用氢气和氧气通过EBACE成功制作了孔、线和矩形图案。(2)在用氢气制作矩形图案的情况下，刻蚀深度与刻蚀时间成正比，并且刻蚀深度随着光束扫描速度和束流加速电压的减小而增加。(3)来自拉曼 通过光谱分析，得出结论，用EBACE加工的单晶金刚石切片没有损坏。(4)利用所开发的加工平台成功地制造了金刚石探针顶部的三维突起。此外，精细的图案被描绘成电子金刚石装置。

项目成果

J.Taniguchi, et al.: "Electron Beam Assisted Chemical Etching of Single-Crystal Diamond Substrates with Hydrogen Gas" Jpn.J.Appl.Phys.36,12B. 7691-7695 (1977)

J.Taniguchi 等人：“用氢气电子束辅助化学蚀刻单晶金刚石基板”Jpn.J.Appl.Phys.36,12B。

J.Taniguchi, I.Miyamoto et al.: "Utilizing of hydrocarbon contamination for prevention of the surface charge-up at electron-beam assisted chemical etching of a diamond chip"Nuclear Instruments and Methods in Physics Research B. 121. 507-509 (1977)

J.Taniguchi、I.Miyamoto 等人：“利用碳氢化合物污染防止电子束辅助化学蚀刻金刚石芯片时的表面充电”《核物理研究仪器和方法》B. 121. 507-509

J. Taniguchi and I. Miyamoto et al.: "Utilizing of hydrocarbon contamination for prevention of the surface charge-up at electron-beam assisted chemical etching of a diamond chip"Nuclear Instruments and Methods in Physics Research B. 121. 507-509 (1997)

J. Taniguchi 和 I. Miyamoto 等人：“利用碳氢化合物污染防止电子束辅助化学蚀刻金刚石芯片时的表面充电”核物理研究仪器和方法 B. 121. 507-509

J.Taniguchi, I.Miyamoto et al.: "Electron Beam Assisted Chemical Etching of Single-Crystal Diamond Substrates with Hydrogen Gas"Japanese Journal of Applied Physics. 36. 7691-7695 (1997)

J.Taniguchi、I.Miyamoto 等人：“用氢气电子束辅助化学蚀刻单晶金刚石基板”日本应用物理学杂志。

Jun Taniguchi ほか: "Electron Beam Assisted Chemical Etching of Single-Crystal Diamond Substrates" Jpn.J.Appl.Phys.36. 7691-7695 (1997)

Jun Taniguchi 等人：“单晶金刚石基底的电子束辅助化学蚀刻”Jpn.J.Appl.Phys.36 (1997)。