Quantum properties of dopants for silicon nanospintronics

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With the channel length of silicon CMOS transistors decreasing down to the tens of nanometers, the number of dopants (impurities) in the channel region is going well below 100. Therefore, there is an increasing need to understand the behavior of a few impurities confined in nanometer-sized silicon regions and of the effect of them on the electronic, magnetic, and optical properties on corresponding devices. At the same time, it is important to study the limit of single impurities to realize ultimate “single-dopant” or “single-atom” nano-silicon devices, which will be governed purely by quantum effects. Therefore, the investigation of a few impurities confined to silicon nanostructures is important and timely both from the fundamental and applied point of views.