Quantum properties of dopants for silicon nanospintronics

硅纳米自旋电子学掺杂剂的量子特性

• 批准号: 96233645
• 负责人: Professor Dr. Martin S. Brandt
• 金额: --
• 依托单位: Walter Schottky Institut für physikalische Grundlagen der Halbleiterelektronik (WSI)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2008
• 资助国家: 德国
• 起止时间: 2007-12-31 至 2014-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/96233645?language=en
• 关键词: Quantum; properties; dopants; silicon; nanospintronics

With the channel length of silicon CMOS transistors decreasing down to the tens of nanometers, the number of dopants (impurities) in the channel region is going well below 100. Therefore, there is an increasing need to understand the behavior of a few impurities confined in nanometer-sized silicon regions and of the effect of them on the electronic, magnetic, and optical properties on corresponding devices. At the same time, it is important to study the limit of single impurities to realize ultimate “single-dopant” or “single-atom” nano-silicon devices, which will be governed purely by quantum effects. Therefore, the investigation of a few impurities confined to silicon nanostructures is important and timely both from the fundamental and applied point of views.

随着硅CMOS晶体管的沟道长度减小到几十纳米，沟道区中的掺杂剂（杂质）的数量远低于100。因此，有越来越多的需要了解的行为的一些杂质限制在纳米尺寸的硅区域和它们对相应的设备上的电子，磁性和光学性能的影响。与此同时，研究单一杂质的极限对于实现最终的“单掺杂”或“单原子”纳米硅器件是重要的，这将纯粹由量子效应控制。因此，从基础和应用的角度来看，对硅纳米结构中的一些杂质的研究是重要的和及时的。

项目成果

Pulsed low-field electrically detected magnetic resonance

脉冲低场电检测磁共振

• DOI: 10.1103/physrevb.91.075314
• 发表时间: 2015
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: L. Dreher;F. Hoehne;H. Morishita;H. Huebl;M. Stutzmann;K. M. Itoh;M. S. Brandt
• 通讯作者: M. S. Brandt

Spin-dependent recombination involving oxygen-vacancy complexes in silicon

硅中涉及氧空位复合物的自旋相关复合

• DOI: 10.1103/physrevb.89.195207
• 发表时间: 2014
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: David P. Franke;Felix Hoehne;Leonid S. Vlasenko;Kohei M. Itoh;Martin S. Brandt
• 通讯作者: Martin S. Brandt

Spin-dependent recombination at arsenic donors in ion-implanted silicon

离子注入硅中砷供体的自旋相关重组

• DOI: 10.1063/1.4896287
• 发表时间: 2014
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: David P. Franke;Manabu Otsuka;Takashi Matsuoka;Leonid S. Vlasenko;Marina P. Vlasenko;Martin S. Brandt;Kohei M. Itoh
• 通讯作者: Kohei M. Itoh