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Ultrahigh peak power vacuum ultraviolet laser and its applications

超高峰值功率真空紫外激光器及其应用

基本信息

批准号：
10044167
负责人：
SASAKI Wataru
金额：
$ 3.2万
依托单位：
Miyazaki University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B).
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

项目摘要

(1) We have demonstrated vacuum ultraviolet emissions from pulsed rare gas jet excited by a high intensity ultrashort pulse laser. Various characteristics of the high intensity laser produced plasma such as electron density and temperature are evaluated. Intensity of the vacuum ultraviolet emission is larger than that of high-order harmonic signals observed simultaneously. This result indicates that the excimer emission initiated high intensity laser produced electons is strong enough to be utilized for practical applications. These knowledge should be used to develop a practical short pulase laser in the laboratory scale.(2) A theoretical model describing the amplification of an ultrashort pulse vacuum ultraviolet light has been developed. This model was verified to compare the results to well known rare gas halide excimer laser amplification.(3) The control of a molecule by using a high intensity laser has been demonstrated in the femtosecond time region as well. Alkali halide molecu … More les have been excited and deexcited by using two different wavelength (ultraviolet and visible) lasers, which leads to the coherent control of the molecule with the minimum thermal effect This type of coherent molecular control means that the molecule can become a good optical amplifier even in a very short wavelength range, and can become a new coherent x-ray source.(4) An amplifier in the vacuum ultraviolet spectral region using rare gas excimers has been constructed based on the knowledge of the last year research accomplishment. A compact discharge laser device realized the Kr excimer laser operation at 147 nm for the first time.(5) The interaction between vacuum ultraviolet light and silicon has been investigated. Silicon as a basic material in the semiconductor industry has been used as a demonstration material. By irradiating the vacuum ultraviolet emission on a silicon wafer, a natural oxide layer has been removed and the surface flatness was dramatically improved. This is mainly attributed to the high photon energy of the vacuum ultraviolet light. Impurities on the silicon surface were successfully removed by the same light emission. In addition to the surface modification, a high quality oxide layer has been homogeneously produced on a silicon wafer at room temperature by using TEOS and vacuum ultraviolet emission. The surface quality was so high that those materials could be used in the semiconductor industry. Less

(1)研究了高强度超短脉冲激光激发脉冲稀有气体射流产生的真空紫外辐射。对高强度激光产生的等离子体的电子密度和温度等特性进行了评价。真空紫外辐射强度大于同时观测到的高次谐波信号。这一结果表明，准分子发射引发的高强度激光产生的电子足够强，可以用于实际应用。这些知识应该用于开发实验室规模的实用短脉冲激光器。(2)建立了一个描述超短脉冲真空紫外光放大的理论模型。对该模型进行了验证，并将结果与已知的稀有气体卤化物准分子激光放大进行了比较。(3)利用高强度激光在飞秒时间范围内对分子的控制也得到了证明。利用紫外和可见光两种不同波长的激光对碱卤化物分子进行激发和去激发，使分子具有最小热效应的相干控制。这种类型的相干分子控制意味着即使在很短的波长范围内，该分子也可以成为良好的光放大器，可以成为一种新的相干x射线源。(4)利用去年的研究成果，构建了一种利用稀有气体准分子的真空紫外光谱放大器。紧凑的放电激光装置首次实现了147 nm的氪准分子激光操作。(5)研究了真空紫外光与硅的相互作用。硅作为半导体工业的基础材料，已被用作示范材料。利用真空紫外辐射辐照硅片，去除了硅片表面的氧化层，大大改善了硅片表面的平整度。这主要是由于真空紫外光的光子能量高。硅表面的杂质被成功地去除。在表面改性的基础上，利用TEOS和真空紫外发射技术，在室温下在硅片上制备了高质量的均匀氧化层。这些材料的表面质量非常高，可以用于半导体工业。少