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Development of an Embedded Process Detector Circuit Targeting Advanced CMOS Semiconductor Technologies

针对先进 CMOS 半导体技术的嵌入式工艺检测器电路的开发

基本信息

批准号：
720493
负责人：
金额：
$ 8.76万
依托单位：
MOORTEC SEMICONDUCTOR LIMITED
依托单位国家：
英国
项目类别：
GRD Development of Prototype
财政年份：
2014
资助国家：
英国
起止时间：
2014 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=720493
关键词：
Development Embedded Process Detector Circuit

项目摘要

Moortec Semiconductor Ltd develop on-chip monitoring circuits and intellectual property (IP) for silicon chip devices manufactured on advanced technologies used in today’s electronics products. Moortec plan to develop a prototype embedded process detector circuit, otherwise known as a process monitor, that will measure the variability of circuits manufactured on advanced CMOS technology nodes such as 28 nano-meter (nm), 16nm and 14nm. With advances in silicon CMOS technology and the scaling of transistor channel lengths to nanometer dimensions, process induced variations in circuit delays have begun to significantly impact chip performance and power consumption. Moortec’s Process Detector (PD) will possess features and address applications that go beyond what is currently commercially available to the designers and developers of semiconductor devices. The PD will allow a silicon chip to self-determine its own manufactured process characteristics, providing information to the rest of the system as to how its performance can be optimised. The System on Chip (SoC) can then be optimised for either its power consumption or its speed for computations or data transfer. The PD will also allow for the ageing effects, which all silicon devices are subjected to, to be measured and monitored by the system, potentially throughout the lifetime of the device.

Moortec半导体有限公司为当今电子产品中使用的先进技术制造的硅芯片设备开发片上监控电路和知识产权（IP）。Moortec计划开发一种嵌入式过程探测器电路的原型，也被称为过程监视器，它将测量采用先进CMOS技术节点（如28纳米、16纳米和14纳米）制造的电路的可变性。随着硅CMOS技术的进步和晶体管通道长度的缩放到纳米尺寸，工艺引起的电路延迟变化已经开始显著影响芯片性能和功耗。Moortec的过程检测器（PD）将具有超越目前商用半导体器件设计人员和开发人员的功能和应用。PD将允许硅芯片自行确定自己的制造工艺特性，为系统的其余部分提供如何优化其性能的信息。然后，片上系统（SoC）可以优化其功耗或计算或数据传输的速度。PD还允许老化效应，所有硅器件都受到老化效应的影响，由系统测量和监控，可能贯穿器件的整个生命周期。