Building up quantum electronics with tailored semiconductor nanostructures

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This project aims to develop nanoscale indium arsenide/ gallium antimonide (InAs/GaSb) devices produced ‘from the bottom up’ using three-dimensional templated semiconductor growth methods. This material has a pair of electron and hole layers separated by a few nanometres, which provide access to states of matter such as exciton condensates and topological insulators with potential use in quantum information technologies. The project will use templates growth to create devices where the InAs/GaSb interface sits perpendicular to the device plane. This project’s work on growth, design and production of nanoscale devices will give Australia’s transitioning economy competitive advantage and agility in critical sectors of nanotechnology, quantum technologies and energy efficient devices.