Building up quantum electronics with tailored semiconductor nanostructures

用定制的半导体纳米结构构建量子电子学

• 批准号: DP170102552
• 负责人: Prof Adam Micolich
• 金额: $ 20.99万
• 依托单位: The University of New South Wales
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2017
• 资助国家: 澳大利亚
• 起止时间: 2017-06-07 至 2020-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP170102552
• 关键词: Building; up; quantum; electronics; tailored

This project aims to develop nanoscale indium arsenide/ gallium antimonide (InAs/GaSb) devices produced ‘from the bottom up’ using three-dimensional templated semiconductor growth methods. This material has a pair of electron and hole layers separated by a few nanometres, which provide access to states of matter such as exciton condensates and topological insulators with potential use in quantum information technologies. The project will use templates growth to create devices where the InAs/GaSb interface sits perpendicular to the device plane. This project’s work on growth, design and production of nanoscale devices will give Australia’s transitioning economy competitive advantage and agility in critical sectors of nanotechnology, quantum technologies and energy efficient devices.

该项目旨在开发使用三维模板化半导体生长方法自下而上生产的纳米级砷化铟/锑化镓(InAs/GaSb)器件。这种材料有一对电子和空穴层，相隔几纳米，这提供了进入物质状态的途径，如激子凝聚体和拓扑绝缘体，在量子信息技术中具有潜在的用途。该项目将使用模板生长来创建InAS/GASB接口垂直于设备平面的设备。该项目在纳米级设备的增长、设计和生产方面的工作将为澳大利亚转型中的经济带来竞争优势，并在纳米技术、量子技术和节能设备等关键行业提供灵活性。