Structural and electronic properties of InN surfaces and interfaces

InN 表面和界面的结构和电子特性

• 批准号: EP/G004625/1
• 负责人: Christopher McConville
• 金额: $ 47.63万
• 依托单位: University of Warwick
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2009
• 资助国家: 英国
• 起止时间: 2009 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FG004625%2F1
• 关键词: Structural; electronic; properties; InN; surfaces

The proposed programme will investigate the structure and electronic properties of indium nitride (InN) surfaces and interfaces. This work is both a natural continuation of our successful research on the surface electronic properties of InN and takes our research forward into new and exciting areas. In addition to investigating the novel surface structures of what is considered to be the last unexplored III-V semiconductor material, we will also study a wide range of InN-containing interfaces which will pave the way for the material to be used in new or improved (opto)electronic devices. The optical and electrical properties of InN, and its alloys with other nitrides make it extremely attractive for use in the next generation of devices, including lasers, sensors, high-brightness light emitting diodes, high-efficiency solar cells, and high-speed transistors.Surface reconstruction refers to the process by which atoms at the surface of a crystal assume a different structure from that of the bulk. Due to the large size difference between indium and nitrogen, InN is likely to exhibit novel surface structures which do not conform to the established guiding principles of surface reconstruction of traditional III-V semiconductors, such as gallium arsenide. This has been confirmed in our preliminary study of one crystal orientation of InN, where, unusually, the surface was terminated by over three layers of indium, including a topmost laterally contracted and rotated indium layer. The detailed arrangements of the atoms at surfaces and interfaces have important implications for both epitaxial growth behaviour and device properties.Consequently, the development of novel semiconductor devices is intimately related to fundamental investigations of interface physics. With continuing miniaturisation in semiconductor device technology, the interface itself is increasingly becoming the device. To fully realize the potential of InN-based low dimensional devices, understanding of both the surface and interface properties is essential. Our research programme will employ a comprehensive range of surface- and interface-sensitive experimental techniques to probe the structural and electronic properties of both clean InN surfaces and a range of technologically important InN-containing interfaces.

该计划将研究氮化铟（InN）表面和界面的结构和电子特性。这项工作既是我们对InN表面电子特性成功研究的自然延续，也将我们的研究推向了新的令人兴奋的领域。除了研究被认为是最后一个未开发的III-V半导体材料的新表面结构外，我们还将研究广泛的含铟界面，这将为材料用于新的或改进的（光电）电子设备铺平道路。InN的光学和电学特性及其与其他氮化物的合金使其在下一代设备中极具吸引力，包括激光器，传感器，高亮度发光二极管，高效太阳能电池和高速晶体管。表面重建是指晶体表面的原子呈现出与晶体体不同的结构的过程。由于铟和氮之间的尺寸差异很大，InN可能会表现出新的表面结构，这些结构不符合传统III-V半导体（如砷化镓）表面重构的既定指导原则。这在我们对InN晶体取向的初步研究中得到了证实，其中，不同寻常的是，表面被超过三层的铟终止，包括最顶层的横向收缩和旋转的铟层。原子在表面和界面上的详细排列对外延生长行为和器件性能都具有重要意义。因此，新型半导体器件的发展与界面物理的基础研究密切相关。随着半导体器件技术的不断小型化，接口本身越来越成为器件。为了充分发挥基于铟的低维器件的潜力，了解表面和界面性质是必不可少的。我们的研究计划将采用全面的表面和界面敏感实验技术来探测清洁的无机氮表面和一系列技术上重要的含无机氮界面的结构和电子特性。

项目成果

Surface, bulk, and interface electronic properties of nonpolar InN

• DOI: 10.1063/1.3488821
• 发表时间: 2010-09-13
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Linhart, W. M.;Veal, T. D.;McConville, C. F.
• 通讯作者: McConville, C. F.

Sulfur passivation of InN surface electron accumulation

InN表面电子积累的硫钝化

• DOI: 10.1063/1.3263725
• 发表时间: 2009
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Bailey L

Surface electronic properties of Mg-doped InAlN alloys

掺镁InAlN合金的表面电子性能

• DOI: 10.1002/pssb.200880766
• 发表时间: 2009
• 期刊: physica status solidi (b)
• 作者: King P

MBE growth and characterization of Mn-doped InN

Mn 掺杂 InN 的 MBE 生长和表征

• DOI: 10.1116/1.3687903
• 发表时间: 2012
• 期刊: Materials, Processing, Measurement, and Phenomena
• 作者: Chai J

Surface electronic properties of In-rich InGaN alloys grown by MOCVD

• DOI: 10.1002/pssc.201100463
• 发表时间: 2012-03
• 期刊: Physica Status Solidi (c)
• 作者: W. Linhart;Ö. Tuna;T. Veal;James J. Mudd;C. Giesen;M. Heuken;C. McConville