Many-body effects in quantized semiconductor electron accumulation layers

量子化半导体电子累积层中的多体效应

• 批准号: EP/H012575/1
• 负责人: Christopher McConville
• 金额: $ 12.07万
• 依托单位: University of Warwick
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2010
• 资助国家: 英国
• 起止时间: 2010 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FH012575%2F1
• 关键词: Many; body; effects; quantized; semiconductor

While most materials have an absence of charge carriers at their surface, a number of semiconductors have been discovered which can support a large build up of electrons at the surface. This creates a potential well at the surface of the semiconductor, causing the conduction band states to become quantized into two-dimensional subbands. We will employ high-resolution angle resolved photoemission spectroscopy (ARPES) measurements of these quantized states in the technologically important materials, InAs, InSb, InN, and ZnO, in conjunction with complementary angle integrated photoemission spectroscopy measurements and bulk electrical and optical studies. While often treated in a one-electron picture, solids are immensely complex many-body systems where processes such as electron-electron (e-e) and electron-phonon (e-ph) interactions can lead to a pronounced renormalization of the material's electronic structure, which can prove essential in determining their fundamental properties. Such effects have hitherto been neglected in the study of these quantized electron accumulation layers. Using ARPES, we will perform a detailed characterisation of the many-body processes in these systems, including their dependence on factors such as temperature, the electron density within the quantum well, and the effective mass and Debye temperature of the host material. This feasibility study will not only develop a thorough understanding of quantized semiconductor electron accumulation layers, important for application of these technologically important materials, but also intends to demonstrate their use as model systems for investigating fundamental features of many-body interactions in solids. Consequently, it has implications for understanding the electronic properties of a wide range of solids, including not only semiconductors but also, for example, metals, highly-correlated electron materials and high-Tc superconductors.

虽然大多数材料的表面没有载流子，但人们已经发现了一些可以在表面支持大量电子积累的半导体。这在半导体表面产生了一个势垒，导致传导带态被量子化成二维子带。我们将使用高分辨率角度分辨光电子能谱(ARPES)测量技术上重要的材料InAs、InSb、InN和ZnO中的这些量子态，并结合互补角度集成光电子能谱测量和整体电学和光学研究。虽然固体通常是单电子的，但固体是极其复杂的多体系统，其中电子-电子(e-e)和电子-声子(e-ph)相互作用等过程可能导致材料电子结构的显著重整化，这可能被证明是确定其基本性质的关键。到目前为止，在对这些量子化电子聚集层的研究中，这种影响一直被忽略。利用ARPES，我们将对这些系统中的多体过程进行详细的表征，包括它们对温度、量子阱内电子密度以及宿主材料的有效质量和德拜温度等因素的依赖。这项可行性研究不仅将深入了解量子化的半导体电子累积层，这对这些具有重要技术意义的材料的应用非常重要，而且还打算展示它们作为模型系统的用途，以研究固体中多体相互作用的基本特征。因此，它对于理解各种固体的电子性质具有重要意义，这些固体不仅包括半导体，还包括金属、高度相关的电子材料和高T_c超导体。

项目成果

Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors

• DOI: 10.1063/1.3562308
• 发表时间: 2011-03-07
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Allen, M. W.;Zemlyanov, D. Y.;Durbin, S. M.
• 通讯作者: Durbin, S. M.

Optimal growth and thermal stability of crystalline Be0.25Zn0.75O alloy films on Al2O3(0001)

• DOI: 10.1063/1.4870533
• 发表时间: 2014-04
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Dae-Sung Park;A. Krupski;A. Sánchez;Chel-Jong Choi;M. Yi;Hyun-Hwi Lee;S. Mcmitchell;C. McConville

Recrystallization of highly-mismatched Be(x)Zn(1-x)O alloys: formation of a degenerate interface.

• DOI: 10.1021/am5043388
• 发表时间: 2014-10
• 期刊: ACS applied materials & interfaces
• 影响因子: 9.5
• 作者: Dae-Sung Park;S. K. Vasheghani Farahani;M. Walker;James J. Mudd;Haiyuan Wang;A. Krupski;E. B. Thorsteinsson;D. Seghier;Chel-Jong Choi;C. Youn;C. McConville

Surface passivation of semiconducting oxides by self-assembled nanoparticles.

• DOI: 10.1038/srep18449
• 发表时间: 2016-01-13
• 期刊: Scientific reports
• 影响因子: 4.6
• 作者: Park DS;Wang H;Vasheghani Farahani SK;Walker M;Bhatnagar A;Seghier D;Choi CJ;Kang JH;McConville CF
• 通讯作者: McConville CF

Temperature dependence of the direct bandgap and transport properties of CdO

• DOI: 10.1063/1.4775691
• 发表时间: 2013-01
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: S. V. Farahani;V. Muñoz-Sanjosé;J. Zúñiga-Pérez;C. McConville;T. Veal