Coupling of single quantum dots to two-dimensional systems

不同维度的纳米物体之间的相互作用，例如零维量子点（QD）与二维（2D）系统的静电库仑耦合，是一个基本的兴趣和基于电荷的记忆有很大的相关性。这里将研究单个量子点与二维系统之间的相互作用。创新地利用合作伙伴的互补专业知识，将首次将基于sb的量子点与分栅结构结合起来，这将允许精确控制单个量子点的电荷状态。基于sb的量子点具有很强的空穴约束，在室温下产生多年的潜在保留时间，可以分析带电量子点对高达300k的二维系统的影响。从中长期的角度来看，结果可能对未来几代的记忆非常重要：二维系统与单个量子点的相互作用的知识可能使我们能够达到基于电荷的记忆的最终极限（例如Flash）。

The interaction between nano-objects of different dimensionality, e.g. electrostatic Coulomb-coupling of a zero-dimensional quantum dot (QD) to a two-dimensional (2D) system is of fundamental interest and of great relevance for charge-based memories. This interaction between a single QD and a 2D system shall be studied here. Innovative use of the complementary expertise of the partners will combine, for the first time, Sb-based QDs with a split-gate structure, which will allow the precise control of the charge-state of a single QD. Sb-based QDs have strong hole confinement yielding a potential retention time of many years at room temperature, enabling the analysis of the influence of charged QDs on a 2D system up to 300 K. In the mid-long term perspective, the results could be important for future generations of memories: knowledge of the interaction of a 2D system with a single QD might allow us to reach the ultimate limits of charged-based memories (e.g. Flash).