Coupling of single quantum dots to two-dimensional systems

单量子点与二维系统的耦合

• 批准号: EP/H006419/1
• 负责人: Manus Hayne
• 金额: $ 37.56万
• 依托单位: Lancaster University
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2009
• 资助国家: 英国
• 起止时间: 2009 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FH006419%2F1
• 关键词: Coupling; single; quantum; dots; two

The interaction between nano-objects of different dimensionality, e.g. electrostatic Coulomb-coupling of a zero-dimensional quantum dot (QD) to a two-dimensional (2D) system is of fundamental interest and of great relevance for charge-based memories. This interaction between a single QD and a 2D system shall be studied here. Innovative use of the complementary expertise of the partners will combine, for the first time, Sb-based QDs with a split-gate structure, which will allow the precise control of the charge-state of a single QD. Sb-based QDs have strong hole confinement yielding a potential retention time of many years at room temperature, enabling the analysis of the influence of charged QDs on a 2D system up to 300 K. In the mid-long term perspective, the results could be important for future generations of memories: knowledge of the interaction of a 2D system with a single QD might allow us to reach the ultimate limits of charged-based memories (e.g. Flash).

不同维度的纳米物体之间的相互作用，例如零维量子点（QD）与二维（2D）系统的静电库仑耦合，是基本感兴趣的，并且与基于电荷的存储器非常相关。这里将研究单个QD和2D系统之间的这种相互作用。创新性地利用合作伙伴的互补专业知识将联合收割机首次将Sb基量子点与分裂栅结构结合起来，这将允许精确控制单个量子点的电荷状态。Sb基量子点具有很强的空穴约束能力，在室温下可以保持多年，使得在高达300 K的温度下分析带电量子点对二维系统的影响成为可能。从中长期的角度来看，这些结果可能对未来的存储器很重要：2D系统与单个QD的相互作用的知识可能使我们达到基于电荷的存储器（例如Flash）的极限。

项目成果

Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures

• DOI: 10.1063/1.4818834
• 发表时间: 2013-08
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: P. Hodgson;R. Young;M. A. Kamarudin;P. Carrington;A. Krier;Q. Zhuang;Ep Erwin Smakman;P. Koenraad;M. Hayne

Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings

高品质 II 型 GaSb/GaAs 量子环堆叠层的长波长光致发光

• DOI: 10.1021/cg301674k
• 发表时间: 2013
• 期刊: Crystal Growth & Design
• 影响因子: 3.8
• 作者: Carrington P

Hydrogenation of GaSb/GaAs quantum rings

GaSb/GaAs 量子环的氢化

• DOI: 10.1063/1.4894413
• 发表时间: 2014
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Hodgson P