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GaSb/GaAs quantum rings as single photon sources

GaSb/GaAs quantum rings as single photon sources
GaSb/GaAs 量子环作为单光子源
批准号:
EP/M50838X/1
负责人:
Manus Hayne
金额:
$14.66万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2015
资助国家:
英国
项目状态:
已结题
起止时间:
2015 至 --

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中文摘要
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英文摘要
Quantum technologies are those which exploit the exotic properties of nature described by quantum mechanics to deliverdevices with unprecedented speed or accuracy compared with conventional technology, or even generate completely noveltechnologies with new functionalities, which simply do not exist at present. Quantum cryptography is one such technology:communication whose security is guaranteed by fundamental laws of quantum mechanics. The implementation of quantumcryptography relies on the ability to generate single photons of light on demand. Several different physical systems havebeen used to generate single photons, but very few of them are suitable for commercial production as they are impracticaland inconvenient. An ideal single photon source should be fast, cheap, operate at room temperature, and emit photons atthe wavelengths used in existing optical-fibre based telecommunications systems. In fact, a practical single photon sourceis expected to look very like a type of semiconductor laser diode called a vertical cavity surface emitting laser (VCSEL). Inthis year-long project we will assess the feasibility of mass-producing low-cost, room-temperature single photon sourceswith telecom-wavelength emission by developing novel VCSEL devices whose active regions incorporate tinysemiconductor nanostructures called self-assembled quantum rings. This will allow us to leap-frog a stage in thedevelopment of practical, i.e. commercial, single photon sources, and to make a realistic assessment of their commercialpotential.
期刊论文(2)
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会议论文
GaSb quantum rings in GaAs/AlxGa1-xAs quantum wells
GaAs/AlxGa1-xAs 量子阱中的 GaSb 量子环
DOI: 10.1063/1.4940880
发表时间: 2016
期刊: Journal of Applied Physics
影响因子: 3.2
作者: [Hodgson P]
通讯作者: Hodgson P
GaSb/GaAs quantum ring single photon LEDs (QR_SPLEDs)
  • 批准号:
    EP/P034233/1
  • 项目类别:
    Research Grant
  • 资助金额:
    $15.18万
  • 财政年份:
    2017
  • 负责人:
    Manus Hayne
  • 依托单位:
Coupling of single quantum dots to two-dimensional systems
  • 批准号:
    EP/H006419/1
  • 项目类别:
    Research Grant
  • 资助金额:
    $37.56万
  • 财政年份:
    2009
  • 负责人:
    Manus Hayne
  • 依托单位:
国内基金
海外基金
基于应力平衡量子阱结构的超高效GaInP/GaAs(QWs)/InGaAs太阳电池研究
GaAs基1μm激光电池高光电特性调控机制研究
  • 批准号:
    62301347
  • 项目类别:
    青年科学基金项目
  • 资助金额:
    30.00万元
  • 批准年份:
    2023
  • 负责人:
    苟于单
  • 依托单位:
小麦成株抗条锈性新位点QYr.gaas-1AL精细定位及候选基因功能分析
  • 批准号:
    32360512
  • 项目类别:
    地区科学基金项目
  • 资助金额:
    32万元
  • 批准年份:
    2023
  • 负责人:
    白斌
  • 依托单位:
全介质超表面透射式GaAs光电阴极的窄带发射机理及特性研究
  • 批准号:
    12375158
  • 项目类别:
    面上项目
  • 资助金额:
    53万元
  • 批准年份:
    2023
  • 负责人:
    彭新村
  • 依托单位: