Silicon emission technologies based on nanocrystals
Silicon emission technologies based on nanocrystals
批准号:
EP/H009817/1
负责人:
Matthew Halsall
金额:
$77.54万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2009
资助国家:
英国
项目状态:
已结题
起止时间:
2009 至 --
中文摘要
点击翻译按钮获取中文摘要
英文摘要
The global semiconductor market has a value of around $1trillion, over 90% of which is silicon based. In many senses silicon has driven the growth in the world economy for the last 40 years and has had an unparalleled cultural impact. Given the current level of commitment to silicon fabrication and its integration with other systems in terms of intellectual investment and foundry cost this is unlikely to change for the foreseeable future. Silicon is used in almost all electronic circuitry. However, there is one area of electronics that, at the moment, silicon cannnot be used to fill; that is in the emission of light. Silicon cannot normally emit light, but nearly all telecommunications and internet data transfer is currently done using light transmitted down fibre optics. So in everyones home signals are encoded by silicon and transmitted down wires to a station where other (expensive) components combine these signals and send light down fibres. If cheap silicon light emitters were available, the fibre optics could be brought into everyones homes and the data rate into and out of our homes would increase enormously. Also the connection between chips on circuit boards and even within chips could be performed using light instead of electricity. The applicants intend to form a consortium in the UK and to collaborate with international research groups to make silicon emit light using tiny clumps of silicon, called nanocrystals;. These nanocrystals can emit light in the visible and can be made to emit in the infrared by adding erbium atoms to them. A number of techniques available in Manchester, London and Guildford will be applied to such silicon chips to understand the light emission and to try to make silicon chips that emit light when electricity is passed through them. This will create a versatile silicon optical platform with applications in telecommunications, solar energy and secure communications. This technology would be commercialised by the applicants using a high tech start-up commpany.
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Formation of Si-nanocrystals in SiO
SiO2 中硅纳米晶体的形成
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[Iain F. Crowe (Author)]
通讯作者:
Iain F. Crowe (Author)
Optical spectroscopy of Er doped Si-nanocrystals on sapphire substrates fabricated by ion implantation into SiO 2
离子注入 SiO 2 蓝宝石衬底上掺铒硅纳米晶的光谱
DOI:
10.1117/12.852922
发表时间:
2010
期刊:
影响因子:
--
作者:
[Hylton N]
通讯作者:
Hylton N
Luminescence quenching of conductive Si nanocrystals via "Linkage emission": Hopping-like propagation of infrared-excited Auger electrons
通过“联动发射”实现导电硅纳米晶体的发光猝灭:红外激发俄歇电子的跳跃式传播
DOI:
10.1063/1.4893029
发表时间:
2014
期刊:
Journal of Applied Physics
影响因子:
3.2
作者:
[Ishii M]
通讯作者:
Ishii M
Electrical observation of non-radiative recombination in Er doped Si nano-crystals during thermal quenching of intra-4f luminescence
4f内发光热猝灭过程中掺铒硅纳米晶非辐射复合的电学观察
DOI:
10.7567/jjap.53.031302
发表时间:
2014
期刊:
Japanese Journal of Applied Physics
影响因子:
1.5
作者:
[Ishii M]
通讯作者:
Ishii M
Atomic-scale distortion of optically activated Sm dopants identified with site-selective X-ray absorption spectroscopy
用位点选择性 X 射线吸收光谱鉴定光激活 Sm 掺杂剂的原子尺度畸变
DOI:
10.1063/1.4824375
发表时间:
2013
期刊:
Journal of Applied Physics
影响因子:
3.2
作者:
[Ishii M]
通讯作者:
Ishii M
共 7 条
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项目类别:Research Grant
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依托单位:
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Silicon photonic sensors and actuators for biological systems
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资助金额:$24.97万
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财政年份:2009
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负责人:Matthew Halsall
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Nanocrystals as a route to Silicon Optics
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财政年份:2007
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负责人:Matthew Halsall
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THz electro-optics of nitride semiconductors: a feasibility study
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财政年份:2006
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负责人:Matthew Halsall
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Spectroscopy and Applications of Nitride Quantum Dots
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批准号:EP/D003407/1
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项目类别:Research Grant
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资助金额:$16.96万
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财政年份:2006
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负责人:Matthew Halsall
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依托单位:
国内基金
海外基金
基于飞行时间技术的新一代正电子发射断层扫描技术研究
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批准号:10775149
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项目类别:面上项目
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资助金额:40.0万元
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批准年份:2007
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负责人:魏龙
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依托单位: