Light and Elevated Temperature Induced Degradation of Silicon Solar Cells
Light and Elevated Temperature Induced Degradation of Silicon Solar Cells
批准号:
EP/T025131/1
负责人:
Matthew Halsall
金额:
$79.82万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2020
资助国家:
英国
项目状态:
已结题
起止时间:
2020 至 --
中文摘要
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英文摘要
The importance and urgency of reducing carbon dioxide emissions has received much publicity. Electricity generation is responsible for 38% of carbon emissions world wide. Of all sources of global warming electricity generation is probably, technologically, the most easily replaced by carbon free sources. Electricity from sunlight using the photo-voltaic effect, which we will refer to as solar PV, was very much a niche application as little as 15 years ago. However in the last decade silicon solar PV technology has developed with astonishing speed so that today it is the cheapest form of electricity generation in most countries within 45 degrees of the equator. Equally importantly the cost of manufacture is decreasing by 24% for each doubling of production volume, much faster than most products. At the moment Solar PV provides only 2.6% of the world's electricity (in kWh) although a higher percentage in some countries (eg 7.9% in Germany, 5.4% in India). There are a number of factors which delay the take up of this technology. The biggest difficulty is intermittency in countries like the UK where peak load does not match peak solar output necessitating pumped storage hydro or other rapid start up generation which adds to the cost. In tropical and sub-tropical countries solar generation matches the load much better and it is these countries in which electricity demand is increasing most rapidly. However in general there is a reluctance to invest in Solar which in part is due to Solar being regarded as an unproven technology and questions regarding long term reliability of a capital intensive system with a costing based on a projected life of >25 years. It is well known that silicon solar cells degrade. There are two commercially important mechanisms. One is due to a reaction involving boron and oxygen which happens very quickly reducing the efficiency by ~2% in the first 24 hours of operation. This is well enough understood for specialists to be on the way to developing ways of minimising the effect and demonstrating stability. The other mechanism is called "light and elevated temperature degradation" (LeTID). It takes months or sometimes years to produce a degradation of between 2 and 5%. The higher the light intensity and the higher the temperature the faster the degradation although there are large variations between different materials and solar cell designs which are not at all understood despite much behavioural data.The aims of this project are to develop a fundamental understanding of the degradation mechanism, to test proposed methodologies for reducing or eliminating LeTID and to use our understanding of the degradation mechanisms involved to develop meaningful accelerated life tests. Experimental work will be done in Manchester using test devices fabricated by us in Manchester and by the University of New South Wales (Australia). The prime techniques used will be optical, chemical and electrical measurements in Manchester and the Australian National University (Canberra) supported by modelling work at the University of Aveiro (Portugal). These will include lifetime spectroscopy, Deep Level Transient Spectroscopy and variants, admittance spectroscopy, low temperature photo-luminescence, time resolved photo-luminescence, Raman spectroscopy, hydrogen measurements and Secondary Ion Mass Spectroscopy. Materials and devices samples will be supplied by two manufactures active in the silicon solar field.
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Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer
硅中的受主氧缺陷:硼、镓、铟和铝与氧二聚体相互作用形成的中心的电子特性
DOI:
10.1063/5.0076980
发表时间:
2021
期刊:
Journal of Applied Physics
影响因子:
3.2
作者:
[De Guzman J]
通讯作者:
De Guzman J
Determination of Gallium Concentration in Silicon from Low-Temperature Photoluminescence Analysis
低温光致发光分析测定硅中镓浓度
DOI:
10.1002/solr.202300956
发表时间:
2024
期刊:
Solar RRL
影响因子:
7.9
作者:
[Abdul Fattah T]
通讯作者:
Abdul Fattah T
Interactions of Hydrogen Atoms with Acceptor-Dioxygen Complexes in Czochralski-Grown Silicon
直拉生长硅中氢原子与受主双氧配合物的相互作用
DOI:
10.1002/pssa.202200176
发表时间:
2022
期刊:
physica status solidi (a)
影响因子:
--
作者:
[Abdul Fattah T]
通讯作者:
Abdul Fattah T
The Role of Si Self-interstitial Atoms in the Formation of Electrically Active Defects in Reverse-Biased Silicon n + -p Diodes upon Irradiation with Alpha Particles
硅自填隙原子在α粒子辐照下反向偏置硅n-p二极管电活性缺陷形成中的作用
DOI:
10.1002/pssa.202100104
发表时间:
2021
期刊:
physica status solidi (a)
影响因子:
--
作者:
[Aharodnikau D]
通讯作者:
Aharodnikau D
Electronic Properties and Structure of Boron-Hydrogen Complexes in Crystalline Silicon
晶体硅中硼氢配合物的电子性质和结构
DOI:
10.1002/solr.202100459
发表时间:
2021
期刊:
Solar RRL
影响因子:
7.9
作者:
[De Guzman J]
通讯作者:
De Guzman J
共 10 条
Instrument to identify defects and impurities in wide band gap semiconductors via excited states
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批准号:EP/P015581/1
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项目类别:Research Grant
-
资助金额:$100.79万
-
财政年份:2017
-
负责人:Matthew Halsall
-
依托单位:
Silicon photonic sensors and actuators for biological systems
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批准号:EP/H023836/1
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项目类别:Research Grant
-
资助金额:$24.97万
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财政年份:2009
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负责人:Matthew Halsall
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依托单位:
Silicon emission technologies based on nanocrystals
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批准号:EP/H009817/1
-
项目类别:Research Grant
-
资助金额:$77.54万
-
财政年份:2009
-
负责人:Matthew Halsall
-
依托单位:
Nanocrystals as a route to Silicon Optics
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批准号:EP/F013140/1
-
项目类别:Research Grant
-
资助金额:$24.39万
-
财政年份:2007
-
负责人:Matthew Halsall
-
依托单位:
THz electro-optics of nitride semiconductors: a feasibility study
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批准号:EP/D051304/1
-
项目类别:Research Grant
-
资助金额:$2.32万
-
财政年份:2006
-
负责人:Matthew Halsall
-
依托单位:
Spectroscopy and Applications of Nitride Quantum Dots
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批准号:EP/D003407/1
-
项目类别:Research Grant
-
资助金额:$16.96万
-
财政年份:2006
-
负责人:Matthew Halsall
-
依托单位:
海外基金