Spectroscopy and Applications of Nitride Quantum Dots

氮化物量子点的光谱学及应用

• 批准号: EP/D003407/1
• 负责人: Matthew Halsall
• 金额: $ 16.96万
• 依托单位: University of Manchester
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2006
• 资助国家: 英国
• 起止时间: 2006 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FD003407%2F1
• 关键词: Spectroscopy; Applications; Nitride; Quantum; Dots

InGaN is the material used in the manufacture of bright blue and white light emitting diodes and lasers, in the future these devices will replace normal incandescent bulbs in many applications, saving electricity and, in the case of DVD players, increasing storage capacity. They are made by chemically depositing very thin films of InGaN on to GaN. When a current flows in the InGaN layers electrons are confined within the layer and emit light. The authors of this proposal intend to confine the electrons not only in the InGaN layer but into very small regions of that layer by means of nanometer scale clumps of material known as quantum dots. By studying the way in which these dots form, the way in which the electrons are confined and the way in which they emit light they intend to improve the efficiency of emission from existing devices and thus realise the potential improvements to society listed above.

InGaN是制造明亮的蓝白光发光二极管和激光器的材料，未来这些设备将在许多应用中取代普通白炽灯，节省电力，对于DVD播放机来说，还可以增加存储容量。它们是通过在GaN上化学沉积非常薄的InGaN薄膜而制成的。当电流在InGaN层中流动时，电子被限制在层内并发光。这项提议的作者打算将电子不仅限制在InGaN层中，而且通过被称为量子点的纳米级材料块限制在该层的非常小的区域中。通过研究这些点的形成方式、电子被限制的方式和它们发光的方式，他们打算提高现有设备的发射效率，从而实现上述对社会的潜在改善。

项目成果

Optical and microstructural studies of InGaN/GaN quantum dot ensembles

• DOI: 10.1063/1.3226645
• 发表时间: 2009-09
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: S. C. Davies;D. Mowbray;F. Ranalli;P. Parbrook;Q. Wang;Tao Wang;B. Yea;B. Sherliker;M. Halsall;R. Kashtiban;U. Bangert