High-Power Tunable GaAs Distributed Feedback Lasers

光子学是一项具有深远应用的关键使能技术。在这个项目中，我们将实现300至1300nm波长范围内的新一代增强功能的gaas激光器。这些设备基于一种新的单片集成方案，将对显示、印刷、吸收光谱和电信等领域的现有应用产生影响，同时在天体光子学、传感、生物医学成像、光动力治疗、荧光光谱、美容和临床手术程序、过程控制、农业、国防和安全等领域实现新的应用。由于要求在含铝层上过度生长，GaAs上的单片集成以前受到阻碍。我们将利用研究者之前的EPSRC可行性研究中展示的方法，研究先进的离散GaAs组件，以研究真正的单片集成的潜力。我们将在连续埋地波导中实现与功率放大器集成的分布式反馈（DFB）激光器。作为灵活性的额外证明，DFB附近将有一个加热元件，用于波长稳定和调谐。这项颠覆性的新技术将使600至1300纳米范围内的低成本、高效率、高功率、波长灵活的激光器成为可能。此外，固有的高功率和光谱纯度有利于频率加倍，将范围扩展到300nm。该项目的具体目标将是这些集成器件的概念验证演示，并提供760nm（基于量子阱）和1180nm（基于量子点）的可靠性统计数据，即覆盖该技术中可用的短波长区域。

Photonics is a key enabling technology with far reaching applications. In this project we will realise a new generation of enhanced-functionality GaAs-based lasers for the 300 to 1300nm wavelength range. These devices, based on a new monolithic integration scheme, will impact upon existing applications in display, printing, absorption spectroscopy and telecoms, whilst enabling new applications in astrophotonics, sensing, biomedical imaging, photodynamic therapy, fluorescence spectroscopy, cosmetic and clinical surgery procedures, process control, agriculture, defence and security. Monolithic integration on GaAs has previously been impeded due to the requirement for overgrowth upon aluminium containing layers. We will capitalise on approaches demonstrated in the investigator's previous EPSRC feasibility study into advanced discrete GaAs components to investigate the potential for true monolithic integration. We will realise a distributed feedback (DFB) laser monolithically integrated with a power amplifier within a continuous buried waveguide. As an extra proof of flexibility, there will be a heater element adjacent to the DFB for both wavelength stabilisation and tuning. This disruptive new technology will enable low cost, highly efficient, high power, wavelength agile lasers, in the range from 600 to 1300nm. Additionally, inherent high power and spectral purity are favourable for frequency doubling to extend the range down to 300nm. Specific objectives of this project will be a proof of concept demonstration of these integrated devices, backed up with reliability statistics at 760nm (based on quantum wells) and 1180nm (based on quantum dots), i.e. covering the short and long wavelength regions readily available in this technology.