权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Advanced GaAs Based Laser Fabrication (Feasibility Study)

先进的 GaAs 激光制造（可行性研究）

基本信息

批准号：
EP/E001017/1
负责人：
Kristian Groom
金额：
$ 6.42万
依托单位：
University of Sheffield
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2006
资助国家：
英国
起止时间：
2006 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FE001017%2F1
关键词：
Advanced GaAs Based Laser Fabrication

项目摘要

GaAs materials research has extended the operating wavelengths of devices to those used in telecommunications and medical diagnostic applications, and offers a number of advantages over incumbent InP based devices. These revolve around the use of larger substrates leading to cost reductions, and greater band offsets allowing higher temperature (or uncooled) operation of a device through improved carrier confinement. However, GaAs based device fabrication is rather immature, with GaAs lasers typically only available as Fabry-Perot ridge structures, which exhibit highly asymmetric output, surface recombination, and broad emission spectra. Technologies such as distributed feedback (for single mode operation) and buried heterostructure lasers (symmetric output, reduced surface losses) are commonplace in commercial InP devices. The development of GaAs based buried heterostructure devices in this proposal relies upon a novel approach in circumventing deleterious regrowth upon exposed AlGaAs, allowing buried heterostructure technology for GaAs based materials. GaAs based buried heterostructure lasers will be developed and assessed in terms of electrical and optical performance, in particular the spatial profile of the optical emission using far field analysis techniques. Solid source and gaseous epitaxial overgrowth methods will be assesed and compared under various conditions. Buried gratings (distributed feedback) will be developed, initially for use in a single mode ridge laser, before ultimately incorporation in a buried heterostructure distributed feedback laser.

GaAs材料的研究已经将器件的工作波长扩展到电信和医疗诊断应用中使用的那些，并且提供了许多优于现有InP基器件的优点。这些技术围绕着使用较大的衬底，从而降低成本，以及通过改进的载流子约束允许器件的更高温度（或非冷却）操作的更大的带偏移。然而，基于GaAs的器件制造相当不成熟，GaAs激光器通常仅可用作法布里-珀罗脊结构，其表现出高度不对称的输出、表面复合和宽发射光谱。分布式反馈（用于单模操作）和掩埋异质结构激光器（对称输出，减少表面损耗）等技术在商用InP器件中很常见。在该提议中，GaAs基掩埋异质结构器件的开发依赖于一种新的方法，该方法可以避免暴露的AlGaAs上的有害再生长，从而允许GaAs基材料的掩埋异质结构技术。GaAs基掩埋异质结构激光器将在电学和光学性能方面进行开发和评估，特别是使用远场分析技术的光发射的空间分布。固态源和气态外延生长方法将在各种条件下进行评估和比较。将开发埋入式光栅（分布反馈），最初用于单模脊激光器，然后最终并入埋入式异质结构分布反馈激光器。