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Superluminescent Diodes and Semiconductor Amplifiers Based on GaAs Window Structures - Follow-on-Fund

Superluminescent Diodes and Semiconductor Amplifiers Based on GaAs Window Structures - Follow-on-Fund
基于 GaAs 窗口结构的超发光二极管和半导体放大器 - 后续基金
批准号:
EP/H029508/1
负责人:
Kristian Groom
金额:
$14.52万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2010
资助国家:
英国
项目状态:
已结题
起止时间:
2010 至 --

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中文摘要
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英文摘要
Two main material platforms covering the spectrum from 650nm to 1650nm: InP covering 1200nm to 1650nm and GaAs covering 650nm to ~1310nm. GaAs offers a number of advantages over InP such as lower cost and higher performance in addition to accessing wavelengths unattainable in InP. However GaAs devices are typically only available as simple ridge waveguides. InP devices are also available as more complex buried waveguides which are more easily integrated and offer flexibility not found in ridge waveguides whilst they also offer improved heat dissipation, permit higher current densities for smaller active volume and have controllable optical beam profiles. These were successfully developed in the GaAs materials system in EPSRC grant EP/E001017, offering the best materials and best device architectures for future incorporation in opto-electronic integrated circuits, allowing technologically advanced device architectures to be developed at wavelengths not presently covered by such devices. IP was generated in applying our novel technique for buried GaAs waveguides to the case of the superluminescent diode (SLD) and semiconductor optical amplifier (SOA), whose operation relies upon attainment of an ultra-low reflectivity mirror at one or more ends of an optical cavity (unlike the case of a laser in which high mirror reflectivities are required). Application of our technique has enabled attainment of mirror reflectivities which are orders of magnitude lower than the lowest reported using alternative techniques, and has allowed a step change in the performance of SLDs incorporating this design, with our unoptimised proof-of-principle devices offering world-leading performance.Whilst this technology is capable of extension across the complete range of wavelengths and associated applications accessed by GaAs, we will first address a large burgeoning market for SLDs and SOAs in the field of optical coherence tomography - a medical imaging technology rolling out across the global healthcare market. Slight modification to the materials and device designs will be made, and the funding will also allow both the commercial packaging of prototype devices for beta testing modules in the field and the reliability testing necessary for convincing users and/or licensees of the technology.
期刊论文(5)
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科研奖励(0)
会议论文
GaAs-based superluminescent diodes with window-like facet structure for low spectral modulation at high output powers
具有窗状刻面结构的 GaAs 基超发光二极管,用于高输出功率下的低光谱调制
DOI: 10.1088/0268-1242/31/4/045003
发表时间: 2016
期刊: Semiconductor Science and Technology
影响因子: 1.9
作者: [Ghazal O]
通讯作者: Ghazal O
Rigorous comparison of the spectral SNR of FTIR and EC-QCL spectroscopy (Conference Presentation)
FTIR 和 EC-QCL 光谱的光谱 SNR 的严格比较(会议演示)
DOI: 10.1117/12.2209063
发表时间: 2016
期刊:
影响因子: --
作者: [Childs D]
通讯作者: Childs D
High-speed high-sensitivity infrared spectroscopy using mid-infrared swept lasers (Conference Presentation)
使用中红外扫频激光器的高速高灵敏度红外光谱(会议演示)
DOI: 10.1117/12.2209300
发表时间: 2016
期刊:
影响因子: --
作者: [Childs D]
通讯作者: Childs D
DOI: 10.1098/rspa.2016.0201
发表时间: 2016-07
期刊: Proceedings. Mathematical, physical, and engineering sciences
影响因子: --
作者: [Guan G, Hirsch M, Syam WP, Leach RK, Huang Z, Clare AT]
通讯作者: Clare AT
In-situ monitoring of component integrity during additive manufacturing using optical coherence tomography
  • 批准号:
    EP/L017016/1
  • 项目类别:
    Research Grant
  • 资助金额:
    $25.13万
  • 财政年份:
    2014
  • 负责人:
    Kristian Groom
  • 依托单位:
High-Power Tunable GaAs Distributed Feedback Lasers
  • 批准号:
    EP/J004898/1
  • 项目类别:
    Research Grant
  • 资助金额:
    $21.29万
  • 财政年份:
    2012
  • 负责人:
    Kristian Groom
  • 依托单位:
Advanced GaAs Based Laser Fabrication (Feasibility Study)
  • 批准号:
    EP/E001017/1
  • 项目类别:
    Research Grant
  • 资助金额:
    $6.42万
  • 财政年份:
    2006
  • 负责人:
    Kristian Groom
  • 依托单位:
海外基金