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Superluminescent Diodes and Semiconductor Amplifiers Based on GaAs Window Structures - Follow-on-Fund

基于 GaAs 窗口结构的超发光二极管和半导体放大器 - 后续基金

基本信息

批准号：
EP/H029508/1
负责人：
Kristian Groom
金额：
$ 14.52万
依托单位：
University of Sheffield
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2010
资助国家：
英国
起止时间：
2010 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FH029508%2F1
关键词：
Superluminescent Diodes Semiconductor Amplifiers Based

项目摘要

Two main material platforms covering the spectrum from 650nm to 1650nm: InP covering 1200nm to 1650nm and GaAs covering 650nm to ~1310nm. GaAs offers a number of advantages over InP such as lower cost and higher performance in addition to accessing wavelengths unattainable in InP. However GaAs devices are typically only available as simple ridge waveguides. InP devices are also available as more complex buried waveguides which are more easily integrated and offer flexibility not found in ridge waveguides whilst they also offer improved heat dissipation, permit higher current densities for smaller active volume and have controllable optical beam profiles. These were successfully developed in the GaAs materials system in EPSRC grant EP/E001017, offering the best materials and best device architectures for future incorporation in opto-electronic integrated circuits, allowing technologically advanced device architectures to be developed at wavelengths not presently covered by such devices. IP was generated in applying our novel technique for buried GaAs waveguides to the case of the superluminescent diode (SLD) and semiconductor optical amplifier (SOA), whose operation relies upon attainment of an ultra-low reflectivity mirror at one or more ends of an optical cavity (unlike the case of a laser in which high mirror reflectivities are required). Application of our technique has enabled attainment of mirror reflectivities which are orders of magnitude lower than the lowest reported using alternative techniques, and has allowed a step change in the performance of SLDs incorporating this design, with our unoptimised proof-of-principle devices offering world-leading performance.Whilst this technology is capable of extension across the complete range of wavelengths and associated applications accessed by GaAs, we will first address a large burgeoning market for SLDs and SOAs in the field of optical coherence tomography - a medical imaging technology rolling out across the global healthcare market. Slight modification to the materials and device designs will be made, and the funding will also allow both the commercial packaging of prototype devices for beta testing modules in the field and the reliability testing necessary for convincing users and/or licensees of the technology.

两个主要的材料平台覆盖了650 nm到1650 nm的光谱：InP覆盖了1200 nm到1650 nm，GaAs覆盖了650 nm到~ 1310 nm。GaAs提供了许多优于InP的优点，例如更低的成本和更高的性能，以及获得InP中无法达到的波长。然而，GaAs器件通常仅可用作简单的脊波导。InP器件也可用作更复杂的掩埋波导，其更容易集成并且提供脊波导中没有的灵活性，同时它们还提供改进的散热，允许更高的电流密度用于更小的有效体积并且具有可控的光束轮廓。这些都是在GaAs材料系统EPSRC授予EP/E001017中成功开发的，为未来在光电集成电路中的结合提供了最好的材料和最好的器件架构，允许技术先进的器件架构在这些器件目前未覆盖的波长下开发。IP是在将我们的用于掩埋GaAs波导的新技术应用于超辐射发光二极管（SLD）和半导体光放大器（SOA）的情况下产生的，其操作依赖于在光学腔的一个或多个端部处实现超低反射率镜（不像激光器的情况，在该激光器中需要高镜反射率）。我们技术的应用使反射镜的反射率比使用替代技术报道的最低反射率低几个数量级，并允许采用这种设计的SLD的性能发生阶跃变化，我们未优化的原理验证器件提供世界领先的性能。虽然这项技术能够扩展到GaAs访问的整个波长范围和相关应用，我们将首先讨论光学相干断层扫描领域中SLD和SOA的一个巨大的新兴市场--一种在全球医疗保健市场推出的医学成像技术。将对材料和设备设计进行轻微修改，资金还将允许在现场进行β测试模块的原型设备的商业包装，以及说服用户和/或技术许可证持有人所需的可靠性测试。