Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC

使用 EBSD、ECCI、CL 和 EBIC 对氮化物半导体薄膜进行纳米级表征

• 批准号: EP/J016098/1
• 负责人: Angus Wilkinson
• 金额: $ 44.01万
• 依托单位: University of Oxford
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2012
• 资助国家: 英国
• 起止时间: 2012 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FJ016098%2F1
• 关键词: Nanoscale; characterisation; nitride; semiconductor; thin

Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.

目前，所有资助研究的摘要都不能在GTR中找到。这通常是因为在提交提案时并不需要摘要，但可能是因为它包含了个人详细信息等敏感信息。

项目成果

Electron Channeling Contrast Imaging of Defects in III-Nitride Semiconductors

III 族氮化物半导体缺陷的电子沟道对比成像

• DOI: 10.1017/s1431927614006849
• 发表时间: 2014
• 期刊: Microscopy and Microanalysis
• 影响因子: 2.8
• 作者: Trager-Cowan C

Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light-electron microscopy

• DOI: 10.1063/5.0080024
• 发表时间: 2022-02-21
• 期刊: JOURNAL OF APPLIED PHYSICS
• 影响因子: 3.2
• 作者: Naresh-Kumar, G.;Edwards, P. R.;Trager-Cowan, C.
• 通讯作者: Trager-Cowan, C.

Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction.

• DOI: 10.1038/s41598-017-11187-z
• 发表时间: 2017-09-07
• 期刊: Scientific reports
• 影响因子: 4.6
• 作者: Naresh-Kumar G;Vilalta-Clemente A;Jussila H;Winkelmann A;Nolze G;Vespucci S;Nagarajan S;Wilkinson AJ;Trager-Cowan C
• 通讯作者: Trager-Cowan C

A synchrotron X-ray diffraction study of non-proportional strain-path effects

非比例应变路径效应的同步加速器 X 射线衍射研究

• DOI: 10.1016/j.actamat.2016.11.011
• 发表时间: 2017
• 期刊: Acta Materialia
• 影响因子: 9.4
• 作者: Collins D

Tutorial: Crystal orientations and EBSD - Or which way is up?

• DOI: 10.1016/j.matchar.2016.04.008
• 发表时间: 2016-07-01
• 期刊: MATERIALS CHARACTERIZATION
• 影响因子: 4.7
• 作者: Britton, T. B.;Jiang, J.;Wilkinson, A. J.
• 通讯作者: Wilkinson, A. J.