Ultimate Control in Semiconductor Lasers
Ultimate Control in Semiconductor Lasers
批准号:
EP/K023195/1
负责人:
Richard Hogg
金额:
$89.52万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2013
资助国家:
英国
项目状态:
已结题
起止时间:
2013 至 --
中文摘要
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英文摘要
Current applications for semiconductor lasers are wide ranging and pervade every aspect of life. Indeed, in the developed world, most people already own several lasers and gain the benefit of many more. With every new technology, this proliferation is set to continue. Most importantly, the laser enables the internet age since all data transmitted around the globe is carried as flashes of laser light. As a consequence most people in the developed world have come to depend on many lasers during a typical day. The reduction in their cost of ownership is therefore of critical importance to the extension of these benefits to the developing world and also bringing new benefits to us all.The potential future applications of photonics are seemingly unlimited, with new technologies and applications continuing to emerge. The key advantage of a semiconductor laser is that if an application has sufficiently large volume, the cost of the semiconductor laser is very low. The DVD player is a good example -with the laser costing a few pence each. The semiconductor laser therefore enables new technologies, devices and processes to be commercialized. However, semiconductor lasers must be able to generate the required "flavour" of light; i.e. the correct wavelength, spectral width, power, polarization, beam shape, etc.Some of the fundamental parameters of a semiconductor laser may be controlled by the design and choice of materials, e.g. wavelength, spectral purity (line-width). However, using current technologies the polarization and beam profile are generally fixed at manufacture and may only be subsequently altered by extrinsic optical components. This introduces additional cost (increasing the environmental impact) and reduces the overall efficiency and usefulness of the device. For future engineers and scientists it would be ideal if there were complete control of the output from a semiconductor laser, providing unlimited possibilities in terms of future applications. The alteration of matter on the scale of the wavelength of light is known to allow the control of the optical properties of a material. Even the laser in something as simple as a mouse incorporates a number of such technologies. We will develop novel nano-scale semiconductor fabrication to modify light-matter interaction and engineer the control of the polarization and form of a laser beam. Our work will realise a volume manufacturable photonic crystal surface emitting laser (PCSEL) for the first time. The nano-scale photonic crystal is responsible for controlling the properties of the laser. It is simply a periodic pattern similar in size to the light itself, a natural example of this periodic patterning produces the blue colour in some butterfly wings, or the iridescence of opal. In our case, every detail of the photonic crystal will be modeled, understood and optimized to control the properties of the laser to meet a range of needs. Lasers will be designed to exhibit almost zero divergence and will also allow, for the first time, the electronic control of divergence and polarization and allow the direct creation of custom engineered beam profiles and patterns. The realization of high efficiency, area scalable high power lasers with ideal beam profiles will contribute to reduced energy consumption in the manufacture of laser devices, and in their cost of ownership. The technologies developed will allow the ultimate in design control of future optical sources, hopefully limiting laser applications only to the imagination. Once successful, such devices will displace existing lasers in established commercial photonics and enable many more emerging application areas. This will be made possible by introducing both new functionality to laser devices and reducing the cost of existing products. We will develop this technology alongside physical understanding and device engineering, liaising closely with world-leaders in the volume manufacturer of such devices.
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DOI:
10.1038/srep13203
发表时间:
2015-08-20
期刊:
Scientific reports
影响因子:
4.6
作者:
[Taylor RJ, Childs DT, Ivanov P, Stevens BJ, Babazadeh N, Crombie AJ, Ternent G, Thoms S, Zhou H, Hogg RA]
通讯作者:
Hogg RA
DOI:
10.1109/jstqe.2017.2701281
发表时间:
2017-05
期刊:
IEEE Journal of Selected Topics in Quantum Electronics
影响因子:
4.9
作者:
[Richard J. E. Taylor;Guangrui Li;P. Ivanov;D. Childs;T. Roberts;B. Stevens;B. Harrison;J. Sarma;N. Babazadeh;Gary Terrnent;R. Hogg]
通讯作者:
Richard J. E. Taylor;Guangrui Li;P. Ivanov;D. Childs;T. Roberts;B. Stevens;B. Harrison;J. Sarma;N. Babazadeh;Gary Terrnent;R. Hogg
DOI:
10.7567/apex.9.032705
发表时间:
2016-02
期刊:
Applied Physics Express
影响因子:
2.3
作者:
[N. Peyvast;K. Zhou;R. Hogg;D. Childs]
通讯作者:
N. Peyvast;K. Zhou;R. Hogg;D. Childs
DOI:
10.1007/s11082-016-0888-0
发表时间:
2017
期刊:
Optical and quantum electronics
影响因子:
3
作者:
[Taylor RJE]
通讯作者:
Taylor RJE
DOI:
10.1109/jstqe.2019.2950795
发表时间:
2019-11-01
期刊:
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
影响因子:
4.9
作者:
[Li, Guangrui, Sarma, Jayanta, Hogg, Richard]
通讯作者:
Hogg, Richard
共 6 条
Integrated Solid-State Steerable Lasers (I-STEER)
-
批准号:EP/X032868/1
-
项目类别:Research Grant
-
资助金额:$120.29万
-
财政年份:2024
-
负责人:Richard Hogg
-
依托单位:
High-powEr phosphorous-based DFB Lasers for Cold ATom Systems (HELCATS)
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批准号:EP/R044848/1
-
项目类别:Research Grant
-
资助金额:$24.73万
-
财政年份:2018
-
负责人:Richard Hogg
-
依托单位:
Ultimate Control in Semiconductor Lasers
-
批准号:EP/K023195/2
-
项目类别:Research Grant
-
资助金额:$41.91万
-
财政年份:2015
-
负责人:Richard Hogg
-
依托单位:
Sub-Cellular OCT Imaging
-
批准号:BB/J021571/1
-
项目类别:Research Grant
-
资助金额:$16.03万
-
财政年份:2012
-
负责人:Richard Hogg
-
依托单位:
Next Generation Components and Systems for Biomedical Imaging
-
批准号:EP/I018328/1
-
项目类别:Research Grant
-
资助金额:$133.58万
-
财政年份:2011
-
负责人:Richard Hogg
-
依托单位:
Next Generation Swept Laser Sources for Optical Coherence Tomography
-
批准号:EP/H008004/1
-
项目类别:Research Grant
-
资助金额:$14.43万
-
财政年份:2010
-
负责人:Richard Hogg
-
依托单位:
Strain engineered InAs/GaAs quantum dots for long wavelength emission
-
批准号:EP/F03427X/1
-
项目类别:Research Grant
-
资助金额:$8.5万
-
财政年份:2008
-
负责人:Richard Hogg
-
依托单位:
Nano- and Micro-scale Integration of Glass-on-Semiconductor for Photonic Components Engineering
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批准号:EP/D04801X/1
-
项目类别:Research Grant
-
资助金额:$53.4万
-
财政年份:2006
-
负责人:Richard Hogg
-
依托单位:
Industry/University Cooperative Research Activity: The Roleof Slurry Rheology in Size Reduction and Material Transport in Tumbling Ball Mills
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批准号:8414214
-
项目类别:Continuing Grant
-
资助金额:$18.83万
-
财政年份:1985
-
负责人:Richard Hogg
-
依托单位:
Industry/University Cooperative Research Activity: Fundamentals of the Flocculation Process in Chemical Engineering
-
批准号:8121731
-
项目类别:Continuing Grant
-
资助金额:$12.54万
-
财政年份:1982
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负责人:Richard Hogg
-
依托单位:
Mass Transport of Particles in Tumbling Mills
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批准号:7820962
-
项目类别:Standard Grant
-
资助金额:$8.93万
-
财政年份:1979
-
负责人:Richard Hogg
-
依托单位:
Mixing and Segregation in Particulate Materials
-
批准号:7204247
-
项目类别:Standard Grant
-
资助金额:$8.47万
-
财政年份:1973
-
负责人:Richard Hogg
-
依托单位:
Black Colleges (Four-Year)
-
批准号:7207338
-
项目类别:Standard Grant
-
资助金额:$3.55万
-
财政年份:1972
-
负责人:Richard Hogg
-
依托单位:
国内基金
海外基金
Cortical control of internal state in the insular cortex-claustrum region
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批准号:--
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项目类别:--
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资助金额:25万元
-
批准年份:2020
-
负责人:Robert Konrad Naumann
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依托单位: