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The Physics and Engineering of Oxide Semiconductors for Large-Area CMOS

大面积 CMOS 氧化物半导体的物理与工程

基本信息

批准号：
EP/M013650/1
负责人：
Andrew Flewitt
金额：
$ 99.79万
依托单位：
University of Cambridge
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2015
资助国家：
英国
起止时间：
2015 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FM013650%2F1
关键词：
Physics Engineering Oxide Semiconductors Large

项目摘要

Electronics and photonics has transformed everyday life over the last twenty years: the silicon microprocessor provides vast processing power in a device that can fit inside a pocket, the liquid crystal display allows us to see information on a high resolution display that can sit on the palm of our hand, and the optic fibre allows us to transmit data at high speeds over long distances. The result is that we are all essentially continuously connected to the internet, and this allows us to communicate with each other and access information instantly. The result has been a profound change in almost every aspect of life including working practices, shopping, healthcare, banking, transport and even relationships. However, whilst we are 'connected', the world of objects that are so much part of our everyday lives are not, and the next big transformation will be to connect these too. This is the vision of the 'Internet of Things'. In the words of Prime Minister David Cameron, 'I see the Internet of Things as a huge transformative development, a way of boosting productivity, of keeping us healthier, making transport more efficient, reducing energy needs, tackling climate change. We are on the brink of a new industrial revolution.'Advances in technology are the driver for such industrial revolutions, and the Internet of Things needs sensors, rfID, power supplies, logic, displays, lighting and communications to be integrated together onto the everyday objects around us with a form factor that does not adversely affect the prime function of the object, whether that object is our car, our refridgerator, our clothes, our purse or our toothbrush.This will require a new generation of electronics which can be produced transparently over large areas on almost any substrate, and which is flexible and robust. Such 'large-area electronics' on glass substrates based on amorphous silicon (a technology born in Dundee University in the 1970s) has already been critical for the development of flat panel displays. However, amorphous silicon is not optically transparent and has rather poor electronic properties (most nobably a low electron mobility). Amorphous ionic oxides have emeged as a replacement for amorphous silicon for display applications in recent years as it has superior electronic properties. In particular, amorphous indium gallium zinc oxide (a-IGZO) has been developed to such a point that it will shortly start to be used in commercial products. However, this complex material can only be made as a n-type and not a p-type semiconductor, and so complemetary logic cannot be realised with the result that power consumption is high. Also, it suffers from instabilities which limits its lifetime. As a result, this material is less well suited to the Internet of Things.This project aims to develop a more simple n-type amorphous ionic oxide semiconductor with an improved stability over a-IGZO, and a complementary p-type amorphous ionic oxiide semiconductor. This will require detailed understanding of the physics of these materials, and in particular the electronic role of impurities. We will subject both the individual materials and devices made from these materials to a wide range of physical tests, including infrared spectroscopy, allowing us to study the device in its applied environment. This is critical as the performance of a thin film device is often dominated by its surfaces. This will enable us to develop both new materials and models for devices which are critical for the design and simulation of circuits and systems. This is critical if the technology is to be applied. We will demonstrate the validity of our materials, processes, models and their application by designing, simulating, fabircating and testing a four-bit rfID tag on a plastic substrate. The cost of producing these devices should end dup being similar to printing, allowing in-line manufacture with the rest of the object they are enabling in the UK.

在过去的二十年里，电子和光子学改变了我们的日常生活：硅微处理器在可以装在口袋里的设备中提供了强大的处理能力，液晶显示器使我们能够在手掌上的高分辨率显示器上看到信息，光纤使我们能够长距离高速传输数据。结果是我们基本上都持续连接到互联网，这使我们能够相互交流并立即访问信息。其结果是生活的几乎各个方面都发生了深刻的变化，包括工作实践、购物、医疗保健、银行、交通甚至人际关系。然而，虽然我们是“连接”的，但我们日常生活中的物体世界却并非如此，下一个重大转变也将是将它们连接起来。这就是“物联网”的愿景。用英国首相戴维·卡梅伦的话来说，“我认为物联网是一项巨大的变革性发展，是提高生产力、让我们更健康、提高运输效率、减少能源需求、应对气候变化的一种方式。”我们正处于新工业革命的边缘。“技术进步是此类工业革命的驱动力，物联网需要将传感器、rfID、电源、逻辑、显示器、照明和通信集成到我们周围的日常物体上，其外形尺寸不会对物体的主要功能产生不利影响，无论该物体是我们的汽车、冰箱、衣服、钱包还是牙刷。这将需要新一代电子产品可以在几乎任何基材上大面积透明地生产，并且灵活且坚固。这种基于非晶硅（邓迪大学于 20 世纪 70 年代诞生的技术）的玻璃基板上的“大面积电子器件”对于平板显示器的发展至关重要。然而，非晶硅不具有光学透明性并且具有相当差的电子性能（最明显的是电子迁移率低）。近年来，非晶离子氧化物因其具有优异的电子性能而成为显示器应用中非晶硅的替代品。特别是，非晶态氧化铟镓锌（a-IGZO）已经发展到很快就会开始应用于商业产品的程度。但这种复杂材料只能制成n型半导体，不能制成p型半导体，无法实现互补逻辑，导致功耗较高。此外，它还存在不稳定因素，从而限制了其使用寿命。因此，这种材料不太适合物联网。该项目旨在开发一种更简单的 n 型非晶离子氧化物半导体，其稳定性比 a-IGZO 更高，以及互补的 p 型非晶离子氧化物半导体。这需要详细了解这些材料的物理特性，特别是杂质的电子作用。我们将对单个材料和由这些材料制成的设备进行广泛的物理测试，包括红外光谱，使我们能够在其应用环境中研究该设备。这一点至关重要，因为薄膜器件的性能通常由其表面决定。这将使我们能够开发新材料和新模型，这对于电路和系统的设计和仿真至关重要。如果要应用该技术，这一点至关重要。我们将通过设计、模拟、制造和测试塑料基板上的四位 rfID 标签来证明我们的材料、工艺、模型及其应用的有效性。生产这些设备的成本最终应该与印刷相似，从而允许与他们在英国启用的其他物体进行在线制造。