Printed Logic Supply Chain (FlexIC) - TSB App. No. 155

印刷逻辑供应链 (FlexIC) - TSB 应用程序。

• 批准号: TS/I001158/1
• 负责人: Andrew Flewitt
• 金额: $ 54.24万
• 依托单位: University of Cambridge
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2010
• 资助国家: 英国
• 起止时间: 2010 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=TS%2FI001158%2F1
• 关键词: Printed; Logic; Supply; Chain; FlexIC

Transistors based on crystalline silicon have dominated as the technology underpinning logic devices for the last fifty years, and the microprocessor is the ultimate example of this. Whilst the consequential packaging of processing power into high performance units has suited the development many electronic systems, such as computers, where processing power is naturally concentrated, it does not suit the future aim of ubiquitous computing. In a ubiquitous computing world, processing power is distributed at a low level to the places where it is required. The consequence of this is that humans no longer interact with specific electronic devices to engage with the digital world, but are constantly connected in an intuitive way that is open to all - a view that is expressed through the recent 'Digital Britain' reports.This will require the development of a new technology that allows high performance electronic devices (such as transistors) to be fabricated at very low cost on a diversity of cheap substrates including plastics. There are several technologies vying for this space, including thin film silicon, organic semiconductors and metal oxides. Each have their relative merits and demerits, and it is clear that no single technology will dominate, but rather that different technologies will address different application areas depending on the specific requirements (performance, lifetime, cost, operating environment, etc.). Metal oxide materials will have a clear role to play in this space as they offer particular features that the other technologies do not - most notably (and simultaneously) transparency, high carrier mobility, an amorphous structure, excellent uniformity and long lifetimes. However, in order to meet these applications, it is necessary to be able to marry metal oxide materials with a low cost patterning technology. To achive this will require a combination of diverse skills from materials characterisation to device testing and failure analysis. It is for this reason that the the Departments of Materials Science and Engineering will be collaborating on this project.This project will see the University continue to develop its expertise in the deposition of a diversity of metal oxide materials including n-type semiconductors (zinc oxide, indium zinc oxide and zinc tin oxide), p-type semiconductors (cuprous oxide) and insulators (hafnium oxide and aluminium oxide). These materials will be applied in a variety of discrete electronic devices, logic devices and circuits using a novel self-aligned patterning technology based on printing techniques. The University will then plug into a complete supply chain of UK companies through the wider project partners.As a consortium, we will develop a sheet-based process to provide printed logic components which will be employed to demonstrate and open up new application areas of distributed logic (ubiquitous computing). This will focus on interactive consumer products that allow brand enhancement, brand protection and improved product choice.Achieving this will require the University to research some very fundamental aspects of the physics, materials science and engineering of metal oxide materials. In particular, the nature of the band structure of metal oxides makes it very difficult to produce a stable, p-type semiconductor. The nature of the interface between metal oxide materials - particularly between semiconductors and dielectrics and between semiconductors and conductors, both of which are key for a functional device - is not well understood. There are numerous reports of a variety of degradation mechanisms operating in these materials, particularly under the application of elevated temperatures and under ultraviolet light illumination, but no consensus on degradation mechanisms. The University will aim to address these key issues to enable the project partners to utilise the metal oxide materials successfully within the time frame of the project.

基于晶体硅的晶体管在过去的50年里一直主导着逻辑器件的技术基础，微处理器就是这方面的最终例子。虽然将处理能力封装到高性能单元中的结果已经适合于处理能力自然集中的许多电子系统（诸如计算机）的发展，但是它不适合于无处不在的计算的未来目标。在无处不在的计算世界中，处理能力以低级别分布到需要它的地方。其结果是，人类不再与特定的电子设备进行交互，以参与数字世界，但始终以一种直观的方式向所有人开放--最近的“数字英国”报告表达了这一观点。这将需要开发一种新技术，使高性能电子设备（例如晶体管）以非常低的成本在包括塑料的各种廉价衬底上制造。有几种技术在争夺这一领域，包括薄膜硅、有机半导体和金属氧化物。每种技术都有其相对的优点和缺点，很明显，没有一种技术会占主导地位，而是不同的技术将根据具体要求（性能，寿命，成本，操作环境等）解决不同的应用领域。金属氧化物材料将在这一领域发挥明确的作用，因为它们提供了其他技术所没有的特殊功能-最值得注意的是（同时）透明度，高载流子迁移率，非晶结构，优异的均匀性和长寿命。然而，为了满足这些应用，必须能够将金属氧化物材料与低成本图案化技术结合。要实现这一目标，将需要从材料特性到设备测试和故障分析的各种技能的组合。正是出于这个原因，材料科学与工程系将在这个项目上进行合作。该项目将使该大学继续发展其在沉积多种金属氧化物材料方面的专业知识，包括n型半导体（氧化锌、氧化铟锌和氧化锌锡）、p型半导体（氧化铜）和绝缘体（氧化铪和氧化铝）。这些材料将应用于各种分立电子器件，逻辑器件和电路使用一种新的自对准图案化技术的基础上印刷技术。大学将通过更广泛的项目合作伙伴加入英国公司的完整供应链。作为一个财团，我们将开发一种基于纸张的工艺，以提供打印的逻辑组件，这些组件将用于展示和开辟分布式逻辑的新应用领域（无处不在的计算）。这将集中在互动消费产品，使品牌增强，品牌保护和改善产品的选择。实现这一目标将需要大学研究的物理学，材料科学和金属氧化物材料工程的一些非常基本的方面。特别地，金属氧化物的能带结构的性质使得很难生产稳定的p型半导体。金属氧化物材料之间的界面性质-特别是半导体和半导体之间以及半导体和导体之间，这两者都是功能器件的关键-尚未得到很好的理解。有许多关于这些材料中各种降解机制的报道，特别是在高温和紫外光照射下，但对降解机制没有共识。该大学将致力于解决这些关键问题，使项目合作伙伴能够在项目的时间框架内成功利用金属氧化物材料。

项目成果

High-resistivity metal-oxide films through an interlayer of graphene grown directly on copper electrodes.

通过直接在铜电极上生长的石墨烯夹层形成高电阻率金属氧化物薄膜。

• DOI: 10.1007/s41127-017-0016-3
• 发表时间: 2018
• 期刊: Graphene technology
• 作者: Pfaendler SM

High-resistivity metal-oxide films through an interlayer of graphene grown directly on copper electrodes

通过直接在铜电极上生长的石墨烯夹层形成高电阻率金属氧化物薄膜

• DOI: 10.17863/cam.11062
• 发表时间: 2018
• 作者: Pfaendler S

Deposition of Low Stress Amorphous Zinc Tin Oxide at Ambient Temperature Using a Remote Plasma Sputtering Process Suitable for Delicate Substrates

使用适用于精致基板的远程等离子体溅射工艺在环境温度下沉积低应力非晶氧化锌锡

• DOI: 10.1149/05008.0073ecst
• 发表时间: 2013
• 期刊: ECS Transactions
• 作者: Pfaendler S

Intrinsic photoluminescence from low temperature deposited zinc oxide thin films as a function of laser and thermal annealing

• DOI: 10.1088/0022-3727/46/9/095305
• 发表时间: 2013-03
• 期刊: Journal of Physics D: Applied Physics
• 作者: C. Tsakonas;W. Cranton;Flora M. Li;K. Abusabee;A. Flewitt;D. Koutsogeorgis;R. Ranson