SEMICONDUCTOR-TINI JUNCTION ELECTRONIC DEVICE

半导体-TINI结电子器件

• 批准号: 3495892
• 负责人: A DAVID JOHNSON
• 金额: $ 4.99万
• 依托单位: TINI ALLOY COMPANY
• 依托单位国家: 美国
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-09-01 至 1990-04-30
• 项目状态: 已结题
• 来源: https://reporter.nih.gov/project-details/3495892
• 关键词: X ray crystallography; chemical structure; clinical biomedical equipment; electron microscopy; luminescence; molecular film; phase change; semiconduction; tin; titanium

At the junction of a semiconductor and a metal, the initial mismatch in chemical potentials of the two materials leads to an electric field in the semiconductor as charge crosses the interface to equalize these potentials. The resulting electric field or depletion width affects the photoluminescence behavior in the semiconductor since electron-hole pairs that are generated in this zone are separated by the field and thus cannot radiatively recombine. We propose to explore this phenomenon as a probe of electronic structure of titanium-nickel thin film. TiNi shape- memory alloy undergoes a solid-state phase change which is expected to alter the Fermi levels in the underlying semiconductor. There is a possibility of developing a transducer which is sensitive to the crystalline state of TiNi and may be a sensitive miniature chemical probe. We will prepare films of TiNi shape-memory alloy in thicknesses varying from a few thousand angstroms to several microns, sputtered onto a variety of substrates. These test samples will be studied by photoluminescence as the temperature is varied through the transition temperature of the TiNi film. The expected result is a significant shift in the spectrum and/or intensity of emitted light when the phase change occurs.

在半导体和金属的接合处， 两种材料的化学势导致电场， 半导体作为电荷穿过界面， 潜力所产生的电场或耗尽宽度会影响 半导体中的光致发光行为由于电子空穴对 在这个区域产生的电磁波被磁场隔开， 不能辐射重组。我们建议将这种现象作为一种 钛镍薄膜的电子结构探针。TiNi形状- 记忆合金经历固态相变， 从而改变底层半导体的费米能级。有一个 开发一种传感器的可能性， TiNi的结晶状态，可能是一种敏感的微型化学品 探针 我们将制备不同厚度的TiNi形状记忆合金薄膜 从几千埃到几微米，溅射到 各种基板。这些试验样品将由以下人员进行研究： 光致发光的温度变化，通过过渡 TiNi薄膜的温度。预期的结果是一个重大转变 当相变时发射光的光谱和/或强度 发生。