Active matrix single-photon technologies on GaAs

GaAs 上的有源矩阵单光子技术

• 批准号: EP/R019665/1
• 负责人: David Cumming
• 金额: $ 40.81万
• 依托单位: University of Glasgow
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2017
• 资助国家: 英国
• 起止时间: 2017 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FR019665%2F1
• 关键词: Active; matrix; single; photon; technologies

The proposed research addresses the need for technologies able to detect single photons at infrared wavelengths, especially in the short-wave (SWIR) and mid-wave (MWIR) infrared. A number of electronic devices based on quantum phenomena, the so called "first" generation of quantum technology, are widespread and used every day for a number of applications. Research has recently shown that some quantum phenomena formerly considered mere scientific curiosities, such as particle entanglement, could have many interesting applications. A "second" generation of quantum technologies is therefore the subject of intense research effort, given their great potential for commercialisation. With regard to the imaging field, new advances in quantum technology include imaging of light in flight and detection of objects hidden behind corners. Such applications rely on cameras where each pixel is sensitive enough to detect single photons, and it consists of a silicon single photon avalanche detector (SPAD) achieved on the same chip as the addressing circuitry required. Silicon offers a commercially mature platform for SPAD-based cameras, but unfortunately on this material platform operation is limited to visible wavelengths. Imaging arrays of SPADs working at infrared wavelengths, not currently available, are highly desirable as they would unlock further applications in the field of industry asset management, biomedical imaging and environmental monitoring. The micro-system technology (MST) group at the University of Glasgow has pioneered MWIR imagers integrating indium antimonide (InSb) photodiodes (PDs) with gallium arsenide (GaAs) metal semiconductor field effect transistors (MESFETs) for addressing. Such imagers are able to operate at room temperature and as such they offer a robust and low-cost alternative to available devices in the MWIR wavelength range, which require cooling. Furthermore, most available MWIR imagers are based on hybridised technologies where PDs and addressing circuitry are attained on separate chips and then combined through flip-chip bonding, a costly and low-yield technique. Compound Semiconductor Technologies (CST) Global Ltd, leading the proposed research, will take the MWIR monolithic technology pioneered by Glasgow University and develop it into a robust manufacturing line aimed at commercialisation. The technology platform is extendable to provide functions at other wavelengths and in single-photon counting by appropriate selection of photo-active semiconductors. Gas Sensing Solutions (GSS) Ltd, a long-standing partner of CST Global Ltd and GU will lead the development of new materials to achieve SPADs at infrared wavelengths, supported by design and prototyping at GU.

提出的研究解决了能够探测红外波长单光子的技术需求，特别是在短波（SWIR）和中波（MWIR）红外。许多基于量子现象的电子设备，即所谓的“第一代”量子技术，被广泛使用并每天用于许多应用。最近的研究表明，一些以前仅仅被认为是科学珍品的量子现象，如粒子纠缠，可能有许多有趣的应用。鉴于其巨大的商业化潜力，“第二代”量子技术因此成为密集研究的主题。在成像领域，量子技术的新进展包括飞行中的光成像和隐藏在角落后面的物体探测。这种应用依赖于相机，其中每个像素都足够灵敏，可以探测到单个光子，它由一个硅单光子雪崩探测器（SPAD）组成，该探测器与寻址电路所需的芯片是在同一芯片上实现的。硅为基于spad的相机提供了一个商业上成熟的平台，但不幸的是，在这种材料平台上，操作仅限于可见波长。spad的红外成像阵列目前还不可用，因为它们将在工业资产管理、生物医学成像和环境监测领域开启进一步的应用。格拉斯哥大学的微系统技术（MST）小组率先开发了MWIR成像仪，将锑化铟（InSb）光电二极管（pd）与砷化镓（GaAs）金属半导体场效应晶体管（mesfet）集成在一起进行寻址。这种成像仪能够在室温下工作，因此它们为需要冷却的MWIR波长范围内的现有设备提供了一种强大且低成本的替代方案。此外，大多数可用的MWIR成像仪基于混合技术，其中pd和寻址电路在单独的芯片上实现，然后通过倒装芯片键合（一种成本高且产量低的技术）组合在一起。化合物半导体技术（CST）全球有限公司将领导拟议的研究，将采用格拉斯哥大学首创的MWIR单片技术，并将其发展成一条旨在商业化的强大生产线。该技术平台是可扩展的，提供其他波长和单光子计数功能，适当选择光活性半导体。气体传感解决方案（GSS）有限公司是CST全球有限公司和GU的长期合作伙伴，将在GU的设计和原型支持下，领导新材料的开发，以实现红外波长的spad。

项目成果

Monolithically Integrated InAsSb-Based nBnBn Heterostructure on GaAs for Infrared Detection

用于红外检测的 GaAs 上单片集成 InAsSb 基 nBnBn 异质结构

• DOI: 10.1109/jstqe.2018.2828101
• 发表时间: 2018
• 期刊: IEEE Journal of Selected Topics in Quantum Electronics
• 影响因子: 4.9
• 作者: Xie C

Single-chip, mid-infrared array for room temperature video rate imaging

用于室温视频速率成像的单芯片中红外阵列

• DOI: 10.1364/optica.4.001498
• 发表时间: 2017
• 期刊: Optica
• 影响因子: 10.4
• 作者: Xie C

Video-rate terahertz digital holographic imaging system.

• DOI: 10.1364/oe.26.025805
• 发表时间: 2018-09
• 期刊: Optics express
• 影响因子: 3.8
• 作者: Mark Humphreys;J. Grant;I. Escorcia-Carranza;Claudio Accarino;Mitchell Kenney;Y. Shah;K. Rew;David R. S. Cumming

Multispectral mid-infrared light emitting diodes on a GaAs substrate

• DOI: 10.1063/1.4986396
• 发表时间: 2017-09-04
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Aziz, Mohsin;Xie, Chengzhi;Cumming, David R. S.
• 通讯作者: Cumming, David R. S.

InSb Avalanche Photodiodes on GaAs Substrates for Mid-Infrared Detection

• DOI: 10.1109/ted.2019.2956283
• 发表时间: 2020-01-01
• 期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
• 影响因子: 3.1
• 作者: Alimi, Y.;Pusino, V.;Cumming, D. R. S.
• 通讯作者: Cumming, D. R. S.