Active matrix single-photon technologies on GaAs

拟议的研究解决了对能够在红外波长，特别是在短波（SWIR）和中波（MWIR）红外探测单光子的技术的需求。许多基于量子现象的电子设备，即所谓的“第一”代量子技术，广泛存在，每天都用于许多应用。最近的研究表明，一些以前被认为仅仅是科学好奇心的量子现象，如粒子纠缠，可能有许多有趣的应用。因此，“第二代”量子技术是密集研究工作的主题，因为它们具有巨大的商业化潜力。关于成像领域，量子技术的新进展包括飞行中的光成像和隐藏在角落后面的物体的检测。这些应用依赖于每个像素都足够灵敏以检测单光子的相机，并且它由硅单光子雪崩检测器（SPAD）组成，该检测器与所需的寻址电路在同一芯片上实现。硅为基于SPAD的相机提供了一个商业上成熟的平台，但不幸的是，在这种材料平台上，操作仅限于可见光波长。目前尚不能获得的在红外波长下工作的SPAD成像阵列是非常可取的，因为它们将在工业资产管理、生物医学成像和环境监测领域中开启进一步的应用。格拉斯哥大学的微系统技术（MST）小组率先开发了集成了锑化铟（InSb）光电二极管（PD）和砷化镓（GaAs）金属半导体场效应晶体管（MESFFET）的MWIR成像器。这样的成像器能够在室温下操作，因此它们为需要冷却的MWIR波长范围内的可用设备提供了鲁棒且低成本的替代方案。此外，大多数可用的MWIR成像器基于混合技术，其中PD和寻址电路在单独的芯片上实现，然后通过倒装芯片键合（一种昂贵且低产率的技术）进行组合。领导这项研究的化合物半导体技术（CST）全球有限公司将采用格拉斯哥大学首创的MWIR单片技术，并将其发展成为一条旨在商业化的强大生产线。该技术平台是可扩展的，以通过适当选择光敏半导体来提供在其他波长和单光子计数中的功能。气体传感解决方案（GSS）有限公司是CST Global Ltd和GU的长期合作伙伴，将领导新材料的开发，以实现红外波长的SPAD，并得到GU的设计和原型设计的支持。

The proposed research addresses the need for technologies able to detect single photons at infrared wavelengths, especially in the short-wave (SWIR) and mid-wave (MWIR) infrared. A number of electronic devices based on quantum phenomena, the so called "first" generation of quantum technology, are widespread and used every day for a number of applications. Research has recently shown that some quantum phenomena formerly considered mere scientific curiosities, such as particle entanglement, could have many interesting applications. A "second" generation of quantum technologies is therefore the subject of intense research effort, given their great potential for commercialisation. With regard to the imaging field, new advances in quantum technology include imaging of light in flight and detection of objects hidden behind corners. Such applications rely on cameras where each pixel is sensitive enough to detect single photons, and it consists of a silicon single photon avalanche detector (SPAD) achieved on the same chip as the addressing circuitry required. Silicon offers a commercially mature platform for SPAD-based cameras, but unfortunately on this material platform operation is limited to visible wavelengths. Imaging arrays of SPADs working at infrared wavelengths, not currently available, are highly desirable as they would unlock further applications in the field of industry asset management, biomedical imaging and environmental monitoring. The micro-system technology (MST) group at the University of Glasgow has pioneered MWIR imagers integrating indium antimonide (InSb) photodiodes (PDs) with gallium arsenide (GaAs) metal semiconductor field effect transistors (MESFETs) for addressing. Such imagers are able to operate at room temperature and as such they offer a robust and low-cost alternative to available devices in the MWIR wavelength range, which require cooling. Furthermore, most available MWIR imagers are based on hybridised technologies where PDs and addressing circuitry are attained on separate chips and then combined through flip-chip bonding, a costly and low-yield technique. Compound Semiconductor Technologies (CST) Global Ltd, leading the proposed research, will take the MWIR monolithic technology pioneered by Glasgow University and develop it into a robust manufacturing line aimed at commercialisation. The technology platform is extendable to provide functions at other wavelengths and in single-photon counting by appropriate selection of photo-active semiconductors. Gas Sensing Solutions (GSS) Ltd, a long-standing partner of CST Global Ltd and GU will lead the development of new materials to achieve SPADs at infrared wavelengths, supported by design and prototyping at GU.