Manufacturing scalable semiconductor quantum light sources

制造可扩展的半导体量子光源

• 批准号: EP/T017813/1
• 负责人: Anthony Bennett
• 金额: $ 133.96万
• 依托单位: CARDIFF UNIVERSITY
• 依托单位国家: 英国
• 项目类别: Fellowship
• 财政年份: 2020
• 资助国家: 英国
• 起止时间: 2020 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FT017813%2F1
• 关键词: Manufacturing; scalable; semiconductor; quantum; light

Semiconductors have already revolutionised the world around us through the inventions of the transistor, diode lasers, integrated circuits and sensors. A new wave of semiconductor quantum technologies are finding commercial applications in ultra-secure communications, enhanced imaging, sensing, and possibly even computing and simulations. In all these cases the "quantum advantage" is theoretically proven and experimentally demonstrated, but there is a strong need for a scalable, practical and efficient source of quantum light. Naturally occurring point-like light sources called "colour centres" act as quantum light sources in wide bandgap semiconductors such as diamond, Silicon Carbide, Boron Nitride and Gallium Nitride (GaN) at room temperature. Commercially, GaN now dominates the market for solid state lighting, because it is an efficient and manufacturable material, leading to costs of less than one dollar per LED. However, Gallium-Nitride is also a promising material for quantum light sources as the colour centres within it emit from the ultra-violet to the near infra-red. This wide range means the emission overlaps with minima in the absorption curves of optical fibres (1310 and 1550 nm), transitions in the best atomic quantum memories (near 800nm) and low loss free-space communications in the blue. Furthermore, by engineering heterostructures within the semiconductor it is possible to electrically drive the emitter, rapidly switch the device and design efficiency-enhancing structures. This fellowship will apply manufacturing techniques widespread in the compound semiconductor manufacturing field, such as large area epitaxy and wafer scale processing, to deliver a bright and room temperature quantum light-emitting diode based on GaN. I will use laser lithography, standardised packaging and quality control to ensure the end device is produced in a manner that enables scale up to mass-production, with the full supply chain within the UK. Collaboration with the UK semiconductor industry for growth and packaging of devices, and use of processing facilities installed at Cardiff University, will foster two-way knowledge exchange between industry and academia. My experience of this type of collaboration at Imperial-Agilent and at Toshiba-Cambridge, makes me uniquely well-qualified to manage this interaction. By funding me to devote a significant amount of my time to research for the next 5 years this project will deliver high impact research and build a platform for future UK prosperity and technological know-how.

半导体已经通过晶体管，二极管激光器，集成电路和传感器的发明彻底改变了我们周围的世界。新浪的半导体量子技术正在在超安全通信，增强的成像，传感甚至计算和模拟中找到商业应用。在所有这些情况下，理论上证明了“量子优势”，并在实验上证明了“量子优势”，但是强烈需要可扩展，实用和有效的量子光源。天然存在的点状光源称为“色中心”，在室温下，诸如钻石，碳化硅，硝酸硼和氮化胆管（GAN）等宽带隙半导体中充当量子光源。从商业上讲，Gan现在在固态照明的市场上占主导地位，因为它是一种有效且可制造的材料，导致每LED不到一美元的成本。然而，随着颜色中心从紫外线散发到近红外红外，氮化壳也是量子光源的有前途的材料。这个较大的范围是指在光纤（1310和1550 nm）的吸收曲线中与最小值的发射重叠，最佳原子量子记忆（接近800nm）的过渡以及蓝色的低损耗空间通信。此外，通过在半导体内进行工程异质结构，可以电力驱动发射极，快速切换设备并设计效率增强结构。 该奖学金将在复合半导体制造领域（例如大面积外延和晶圆尺度处理）中应用制造技术，以提供基于GAN的明亮和室温量子量子发光二极管。我将使用激光光刻，标准化包装和质量控制，以确保最终设备的生产方式，以使大规模生产，并在英国范围内拥有完整的供应链。与英国半导体行业的合作，以开发设备的增长和包装，以及在加的夫大学安装的处理设施的使用将促进工业和学术界之间的双向知识交流。我在帝国竞争激烈和东芝 - 卡姆布里奇（Toshiba-Cambridge）进行这种类型的合作经验，使我非常合格地管理这种互动。通过资助我花费大量时间研究未来5年的研究，该项目将提供高影响力研究，并为未来的英国繁荣和技术知识建立一个平台。

项目成果

Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens

• DOI: 10.1063/5.0085257
• 发表时间: 2022-02
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: S. Bishop;J. Hadden;R. Hekmati;J. K. Cannon;W. Langbein;A. Bennett

Direct-write projection lithography of quantum dot micropillar single photon sources

• DOI: 10.1063/5.0155968
• 发表时间: 2023-03
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: P. Androvitsaneas;R. Clark;M. Jordan;Miguel Alvarez Perez;T. Peach;Stuart N. Thomas;Saleem Shabbir;A. Sobiesierski;A. Trapalis;I. Farrer;W. Langbein;A. Bennett

Evanescent-field assisted photon collection from quantum emitters under a solid immersion lens

固体浸没透镜下的倏逝场辅助量子发射器收集光子

• DOI: 10.1088/1367-2630/ac9697
• 发表时间: 2022
• 期刊: New Journal of Physics
• 影响因子: 3.3
• 作者: Bishop S

Quantum technologies in diamond enabled by laser processing

• DOI: 10.1063/5.0080348
• 发表时间: 2022-01-10
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Giakoumaki, A. N.;Coccia, G.;Eaton, S. M.
• 通讯作者: Eaton, S. M.

Faraday-cage-assisted etching of suspended gallium nitride nanostructures

悬浮氮化镓纳米结构的法拉第笼辅助蚀刻

• DOI: 10.1063/5.0007947
• 发表时间: 2020
• 期刊: AIP Advances
• 影响因子: 1.6
• 作者: Gough G