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Doped Emitters to Unlock Lowest Cost Solar Electricity

掺杂发射器可实现成本最低的太阳能发电

基本信息

批准号：
EP/W000555/1
负责人：
Daniel Lamb
金额：
$ 61.69万
依托单位：
Swansea University
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2021
资助国家：
英国
起止时间：
2021 至无数据
项目状态：
未结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FW000555%2F1
关键词：
Doped Emitters Unlock Lowest Cost

项目摘要

Solar PV is on the cusp of becoming the lowest cost source of electricity for many regions of the world, displacing fossil fuels, with the prospect of dramatically reducing carbon emissions. The second generation thin film PV based on CdTe has lower manufacturing cost and lower carbon footprint than silicon PV. This proposal will enable the solar energy conversion efficiency of thin film CdTe PV modules to equal or exceed that of silicon and enabling more rapid and wider adoption of solar PV electricity.This proposal brings fresh thinking to the front emitter layer that is widely recognised in the CdTe PV community as being the limiting factor in realising the potential of the arsenic doped CdTe and CdSeTe absorber layers. This is predicted to achieve over 25% cell efficiency and over 22% module efficiency. To achieve this goal we have put together a world leading team to work on a new n-type emitter layer. The teams at Swansea-CSER and Loughborough-CREST have combined expertise on As doping of the CdTe absorber layer along with sputter deposition of oxide layers. The world leading team includes project partners - Colorado State University (leading academic team in the USA), First Solar (leading thin film PV manufacturer) and NSG Pilkington (leading coated glass products for thin film PV). The challenge for realising the potential for arsenic doped CdTe (pioneered by the Swansea team) is to combine the acceptor doped CdTe layer with a transparent emitter layer where the n-type doping concentration exceeds the acceptor doping concentration of the CdTe layer. For an acceptor doping of >1x1016 cm-3, the emitter donor doping needs to be >1x1017 cm-3. In addition the conduction band alignment must give a small positive step for electron collection which will reduce non-radiative recombination. To achieve this exacting specification we will explore a wide range of potential oxides and their alloys with different dopants using combinatorial techniques. This will be matched to the optimised alloy composition and doping of the CdSeTe absorber layer using MOCVD. Stability of candidate doped emitters will be tested from an early stage with regard to air exposure and exposure to process steps in fabricating the complete thin film PV device. Extensive materials and device characterisation will be used to understand the relationship between the novel doped emitters and improved PV cell efficiency.

太阳能光伏发电即将成为世界许多地区成本最低的电力来源，取代化石燃料，并具有大幅减少碳排放的前景。基于CdTe的第二代薄膜光伏具有比硅光伏更低的制造成本和更低的碳足迹。这项提议将使薄膜CdTe光伏组件的太阳能转换效率达到或超过硅的太阳能转换效率，并使太阳能光伏发电的应用更快、更广泛。这项提议为前发射层带来了新的思路，前发射层在CdTe光伏社区中被广泛认为是实现掺砷CdTe和CdSeTe吸收层潜力的限制因素。预计这将实现超过25%的电池效率和超过22%的模块效率。为了实现这一目标，我们组建了一个世界领先的团队，致力于开发新的n型发射极层。斯旺西CSER和Loughborough-CREST的团队结合了碲化镉吸收层沿着和氧化层溅射沉积的专业知识。世界领先的团队包括项目合作伙伴-科罗拉多州立大学（美国领先的学术团队），First Solar（领先的薄膜光伏制造商）和NSG Pilkington（领先的薄膜光伏镀膜玻璃产品）。实现砷掺杂的CdTe（由斯旺西团队开创）的潜力的挑战是将受主掺杂的CdTe层与透明发射极层（其中n型掺杂浓度超过CdTe层的受主掺杂浓度）联合收割机结合。对于> 1 × 1016 cm-3的受体掺杂，发射极施主掺杂需要> 1 × 1017 cm-3。此外，导带的排列必须为电子收集提供一个小的正台阶，这将减少非辐射复合。为了实现这一严格的规格，我们将探索广泛的潜在氧化物及其合金与不同的掺杂剂使用组合技术。这将与使用MOCVD的CdSeTe吸收剂层的优化合金成分和掺杂相匹配。候选掺杂发射极的稳定性将从制造完整薄膜PV器件的空气暴露和暴露于工艺步骤的早期阶段进行测试。广泛的材料和器件特性将被用来了解新型掺杂发射极和提高光伏电池效率之间的关系。