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Two dimensional III-VI semiconductors and graphene-hybrid heterostructures

二维 III-VI 半导体和石墨烯混合异质结构

基本信息

批准号：
EP/M012700/1
负责人：
Amalia Patane
金额：
$ 55.87万
依托单位：
University of Nottingham
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2015
资助国家：
英国
起止时间：
2015 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FM012700%2F1
关键词：
Two dimensional III VI semiconductors

项目摘要

The isolation of single-atomic layer graphene has led to a surge of interest in other layered crystals with strong in-plane bonds and weak, van der Waals-like, interlayer coupling. A variety of two-dimensional (2D) crystals have been investigated, including large band gap insulators and semiconductors with smaller band gaps such as transition metal dichalcogenides. Interest in these systems is motivated partly by the need to combine them with graphene to create field effect transistors with high on-off switching ratios. More importantly, heterostructures made by stacking different 2D crystals on top of each other provide a platform for creating new artificial crystals with potential for discoveries and applications. The possibility of making van der Waals heterostructures has been demonstrated experimentally only for a few 2D crystals. However, some of the currently available 2D layers are unstable under ambient conditions, and those that are stable offer only limited functionalities, i.e. low carrier mobility, weak optical emission/absorption, band gaps that cannot be tuned, etc. In a recent series of pilot experiments, we have demonstrated that nanoflakes of the III-VI layer compound, InSe, with thickness between 5 and 20 nanometers, have a "thickness-tuneable" direct energy gap and a sufficiently high chemical stability to allow us to combine them with graphene and related layer compounds to make heterostructures with novel electrical and optical properties. The main goal of this project is to develop graphene-hybrid heterostructures based on this novel class of two-dimensional (2D) III-VI van der Waals crystals. This group of semiconductors will enrich the current "library" of 2D crystals by overcoming limitations of currently available 2D layers and by offering a versatile range of electronic and optical properties. From the growth and fabrication of new systems to the demonstration of prototype devices, including vertical tunnel transistors and optical-enhanced-microcavity LEDs, our project will provide a platform for scientific investigations and will contribute to the technology push required to create new routes to device miniaturization, fast-electronics, sensing and photonics. There is great potential for further growth of all these sectors as the fabrication of 2D systems improves and as new properties are discovered and implemented in functional devices.

单原子层石墨烯的分离导致了对具有强面内键和弱的货车范德华样层间耦合的其他层状晶体的兴趣激增。已经研究了各种二维（2D）晶体，包括大带隙绝缘体和具有较小带隙的半导体，诸如过渡金属二硫属化物。对这些系统的兴趣部分是由于需要将它们与石墨烯结合以创建具有高开关比的场效应晶体管。更重要的是，通过将不同的2D晶体堆叠在一起制成的异质结构为创造具有发现和应用潜力的新人工晶体提供了平台。制作货车德瓦耳斯异质结构的可能性仅在少数二维晶体上得到了实验证明。然而，一些目前可用的2D层在环境条件下是不稳定的，并且那些稳定的2D层仅提供有限的功能，即低载流子迁移率、弱的光发射/吸收、不能被调谐的带隙等。在最近的一系列试验性实验中，我们已经证明了厚度在5纳米和20纳米之间的III-VI层化合物InSe的纳米片，具有“厚度可调”的直接能隙和足够高的化学稳定性，使我们能够将它们与石墨烯和相关层化合物结合，以制造具有新的电学和光学特性的异质结构。该项目的主要目标是开发基于这种新型二维（2D）III-VI货车德瓦尔斯晶体的石墨烯混合异质结构。这组半导体将通过克服目前可用的2D层的限制并通过提供多功能的电子和光学特性来丰富当前的2D晶体“库”。从新系统的生长和制造到原型器件的演示，包括垂直隧道晶体管和光学增强微腔LED，我们的项目将为科学研究提供一个平台，并将为创建器件小型化，快速电子学，传感和光子学的新途径所需的技术推动做出贡献。随着2D系统制造的改进以及功能器件中新特性的发现和实现，所有这些领域都有很大的进一步增长潜力。

项目成果

期刊论文数量（10）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire.

DOI：
10.1038/srep26970
发表时间：
2016-06-03
期刊：
Scientific reports
影响因子：
4.6
作者：
Beardsley R;Akimov AV;Greener JD;Mudd GW;Sandeep S;Kudrynskyi ZR;Kovalyuk ZD;Patanè A;Kent AJ
通讯作者：
Kent AJ

Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure

DOI：
10.1038/s42005-023-01340-8
发表时间：
2023-08
期刊：
Communications Physics
影响因子：
5.5
作者：
A. Dey;Nathan D Cottam;O. Makarovskiy;Wenjing Yan;V. Mišeikis;C. Coletti;J. Kerfoot;V. Korolkov;L. Eaves;J. Linnartz;A. Kool;S. Wiedmann;A. Patané
通讯作者：
A. Dey;Nathan D Cottam;O. Makarovskiy;Wenjing Yan;V. Mišeikis;C. Coletti;J. Kerfoot;V. Korolkov;L. Eaves;J. Linnartz;A. Kool;S. Wiedmann;A. Patané

Photoquantum Hall Effect and Light-Induced Charge Transfer at the Interface of Graphene/InSe Heterostructures