Towards a revolution in optical communications

迈向光通信革命

基本信息

  • 批准号:
    EP/V012789/1
  • 负责人:
  • 金额:
    $ 134.49万
  • 依托单位:
  • 依托单位国家:
    英国
  • 项目类别:
    Research Grant
  • 财政年份:
    2021
  • 资助国家:
    英国
  • 起止时间:
    2021 至 无数据
  • 项目状态:
    未结题

项目摘要

Silicon Photonics is currently transforming data communications, and beginning to impact longer reach applications. However, Silicon Photonics is now maturing and current commercially available transceivers mainly utilise modulators operating at 25Gb/s. Laboratory demonstrators for next generation systems either use multiple parallel lanes of 25Gb/s devices, or perhaps more complex modulation techniques to achieve higher aggregate data rates. Even the fastest research modulators, when integrated with drivers, operate up to approximately 50Gb/s OOK (or corresponding PAM4 modulation to reach a net aggregate speed of 100Gb/s). Researchers worldwide are trying to improve such modulators to squeeze the last few percentage points of improved performance out of these devices, or are turning to integration of other materials, which increases fabrication complexity and cost, and potentially reduces yield. In this work we have invented a way to improve the modulator/driver combination not by a few percent, but by 100%, which will lead to dramatic improvements in data rate, power consumption, and cost of implementation. We will demonstrate 100Gb/s OOK and 200Gb/s PAM4, as well as a novel Optical Time Division Multiplexing (OTDM) system. In effect, we have found a way to transfer functions that were traditionally done in the electronic domain, to the optical domain, saving cost and energy and dramatically improving performance.The proposal provides detailed simulations of the proposed work as preparatory demonstration of the viability of the new techniques. This includes typical characteristics of modulators previously fabricated at the Southampton, which will now be operated in a different mode. Consequently, we are confident that the chances of success are very high.Electronic drivers will be designed at Southampton and subcontracted to TSMC in Taiwan for fabrication. All optical devices will be fabricated at Southampton using the Silicon Photonics Foundry service called CORNERSTONE.The new approach has already led to 2 patent applications, and we suspect others will follow as we progress with the research. Both investigators and the research investigator are inventors, so the team is ideally placed to carry out the work.
Silicon Photonics目前正在改变数据通信,并开始影响更长距离的应用。然而,硅光子学现在正在成熟,并且当前市售的收发器主要利用以25 Gb/s操作的调制器。下一代系统的实验室演示者要么使用25 Gb/s设备的多个并行通道,要么使用更复杂的调制技术来实现更高的聚合数据速率。即使是最快的研究调制器,当与驱动器集成时,也可以运行高达约50 Gb/s的OOK(或相应的PAM 4调制,以达到100 Gb/s的净聚合速度)。世界各地的研究人员正试图改进这种调制器,以从这些器件中挤出最后几个百分点的性能改进,或者转向其他材料的集成,这增加了制造复杂性和成本,并可能降低产量。在这项工作中,我们发明了一种方法来改善调制器/驱动器组合不是几个百分点,而是100%,这将导致数据速率,功耗和实施成本的显着改善。我们将演示100 Gb/s OOK和200 Gb/s PAM 4,以及一种新颖的光时分复用(OTDM)系统。实际上,我们已经找到了一种方法,将传统上在电子领域完成的功能转移到光域,节省成本和能源,并显着提高performance.The提案提供了详细的模拟所提出的工作作为新技术的可行性的初步论证。这包括以前在南安普顿制造的调制器的典型特性,现在将以不同的模式操作。因此,我们有信心成功的机会是非常高的。电子驱动器将在南安普顿设计,并分包给台积电在台湾的制造。所有的光学器件将在南安普顿使用硅光子铸造服务称为CORNERSTONE制造。新的方法已经导致2项专利申请,我们怀疑其他人将遵循我们的研究进展。研究人员和研究人员都是发明家,因此该团队是开展工作的理想场所。

项目成果

期刊论文数量(10)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
A 2.4pJ/b 100Gb/s 3D-integrated PAM-4 Optical Transmitter with Segmented SiP MOSCAP Modulators and a 2-Channel 28nm CMOS Driver
具有分段 SiP MOSCAP 调制器和 2 通道 28nm CMOS 驱动器的 2.4pJ/b 100Gb/s 3D 集成 PAM-4 光发射器
  • DOI:
    10.1109/isscc42614.2022.9731563
  • 发表时间:
    2022
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Talkhooncheh A
  • 通讯作者:
    Talkhooncheh A
Up to 170Gbaud Optical Interconnects with Integrated CMOS-Silicon Photonics Transmitter
具有集成 CMOS 硅光子发射器的高达 170Gbaud 的光学互连
  • DOI:
    10.1109/acp55869.2022.10088674
  • 发表时间:
    2022
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Fang X
  • 通讯作者:
    Fang X
High Bandwidth Capacitance Efficient Silicon MOS Modulator
  • DOI:
    10.1109/jlt.2020.3026945
  • 发表时间:
    2021-01-01
  • 期刊:
  • 影响因子:
    4.7
  • 作者:
    Zhang, Weiwei;Debnath, Kapil;Thomson, David J.
  • 通讯作者:
    Thomson, David J.
Harnessing plasma absorption in silicon MOS modulators
利用硅 MOS 调制器中的等离子体吸收
  • DOI:
    10.21203/rs.3.rs-1618900/v1
  • 发表时间:
    2022
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Zhang W
  • 通讯作者:
    Zhang W
A 100-Gb/s PAM4 Optical Transmitter in a 3-D-Integrated SiPh-CMOS Platform Using Segmented MOSCAP Modulators
  • DOI:
    10.1109/jssc.2022.3210906
  • 发表时间:
    2023-01
  • 期刊:
  • 影响因子:
    5.4
  • 作者:
    Arian Hashemi Talkhooncheh;Weiwei Zhang;Minwo Wang;D. Thomson;M. Ebert;L. Ke;G. Reed;A. Emami
  • 通讯作者:
    Arian Hashemi Talkhooncheh;Weiwei Zhang;Minwo Wang;D. Thomson;M. Ebert;L. Ke;G. Reed;A. Emami
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Graham Reed其他文献

Graham Reed的其他文献

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{{ truncateString('Graham Reed', 18)}}的其他基金

CORNERSTONE Photonics Innovation Centre (C-PIC)
基石光子学创新中心 (C-PIC)
  • 批准号:
    EP/Z531066/1
  • 财政年份:
    2024
  • 资助金额:
    $ 134.49万
  • 项目类别:
    Research Grant
CORNERSTONE 2.5
基石2.5
  • 批准号:
    EP/W035995/1
  • 财政年份:
    2022
  • 资助金额:
    $ 134.49万
  • 项目类别:
    Research Grant
MISSION (Mid- Infrared Silicon Photonic Sensors for Healthcare and Environmental Monitoring)
MISSION(用于医疗保健和环境监测的中红外硅光子传感器)
  • 批准号:
    EP/V047663/1
  • 财政年份:
    2021
  • 资助金额:
    $ 134.49万
  • 项目类别:
    Research Grant
CORNERSTONE 2
基石2
  • 批准号:
    EP/T019697/1
  • 财政年份:
    2020
  • 资助金额:
    $ 134.49万
  • 项目类别:
    Research Grant
Rockley Photonics and the University of Southampton: A Prosperity Partnership
罗克利光子学和南安普顿大学:繁荣的伙伴关系
  • 批准号:
    EP/R003076/1
  • 财政年份:
    2017
  • 资助金额:
    $ 134.49万
  • 项目类别:
    Research Grant
Electronic-Photonic Convergence: A Platform Grant
电子光子融合:平台资助
  • 批准号:
    EP/N013247/1
  • 财政年份:
    2016
  • 资助金额:
    $ 134.49万
  • 项目类别:
    Research Grant
CORNERSTONE: Capability for OptoelectRoNics, mEtamateRialS, nanoTechnOlogy aNd sEnsing
基石:光电、超材料、纳米技术和传感能力
  • 批准号:
    EP/L021129/1
  • 财政年份:
    2014
  • 资助金额:
    $ 134.49万
  • 项目类别:
    Research Grant
Silicon Photonics for Future Systems
未来系统的硅光子学
  • 批准号:
    EP/L00044X/1
  • 财政年份:
    2013
  • 资助金额:
    $ 134.49万
  • 项目类别:
    Research Grant
UK Silicon Photonics
英国硅光子学
  • 批准号:
    EP/F001428/2
  • 财政年份:
    2012
  • 资助金额:
    $ 134.49万
  • 项目类别:
    Research Grant
Near infrared single photon detection using Ge-on-Si heterostructures
使用 Ge-on-Si 异质结构进行近红外单光子检测
  • 批准号:
    EP/H051767/2
  • 财政年份:
    2012
  • 资助金额:
    $ 134.49万
  • 项目类别:
    Research Grant

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