Gallium Nitride Smart Power Integrated Circuit Technology (GaN SPICe)

氮化镓智能功率集成电路技术（GaN SPICe）

• 批准号: EP/V026577/1
• 负责人: Petar Igic
• 金额: $ 45.98万
• 依托单位: Coventry University
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2021
• 资助国家: 英国
• 起止时间: 2021 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FV026577%2F1
• 关键词: Gallium; Nitride; Smart; Power; Integrated

Undeniably, there are numerous crystal materials that surpass Silicon based devices (such as Gallium Nitride, Silicon Carbide and Diamond), but the high cost of their manufacturing has always been the roadblock for their implementation in applications therefore nowadays Silicon dominates the semiconductor industry. Gallium nitride (GaN) is a more superior semiconductor to Silicon for RF and Power applications. The advantage of GaN is that it can be grown as a thin layer on top of a standard low-cost Silicon wafer (i.e. substrate) enabling a new power device family, Power High Electron Mobility Transistors (HEMTs) on Silicon. Power HEMTs are faster, compact in size, more efficient and comparable in price for converter applications to their aging Silicon counterparts. Similarly to Silicon power technology development (from discrete devices to smart power integrated circuits), the arrival of GaN-based integrated circuits, GaN power transistors monolithically integrated with Hall-effect and temperature sensors, GaN gate drivers and ASICs, will facilitate widespread use of gallium nitride technology for high-volume applications.The GaN Smart Power Integrated Circuit Technology (GaN SPICe) project brings together the Universities of Coventry and Glasgow to investigate, develop and provide functional verification of the game-changing GaN smart power integrated technology; the group will be the 1st in the World to integrate a normally-off power GaN HEMT with advanced galvanic Hall-effect and temperature sensors. HEMT is a voltage controlled device and on-chip monitoring of its output current is critical for safe and long operation of an electronic system, similar to monitoring one's heart rate. The galvanic sensor is a GaN Hall-effect device accompanied by signal conditioning circuitry (with Coventry's filed patent application number 1913936.9), to minimise drift in sensor characteristics at elevated temperatures. This will increase functionality, enable a reduction of system volume, reduce cost of assembly, and as chip temperature can be actively compensated, improve reliability and efficiency of the power device. These are fundamental requirements for complex power electronics systems, in particular when installed in limited volume, hostile (high temperature/vibration) environments, such as battery electric and hybrid vehicles for example.Coventry and Glasgow are uniquely positioned to make this project success, thanks to the track record and expertise of its academic and research staff, GaN power HEMT at Glasgow and GaN Hall-effect sensors at Coventry, and the investment in their laboratory facilities (clean room, design, and test and characterisation laboratories), making it one of very few research consortiums, in the UK and overseas, capable of providing innovation at every stage of this development.

不可否认，有许多晶体材料超过了硅基器件(如氮化镓、碳化硅和钻石)，但其高昂的制造成本一直是其应用的障碍，因此目前硅在半导体行业中占据主导地位。在射频和功率应用方面，氮化镓(GaN)是一种比硅更优越的半导体。GaN的优势在于，它可以作为一层薄层生长在标准的低成本硅片(即衬底)上，从而实现了新的功率器件家族--硅上功率高电子迁移率晶体管(HEMTs)。功率HEMT速度更快、体积更小、效率更高，在变流器应用中的价格与老化的硅同类产品相当。与硅功率技术的发展(从分立器件到智能功率集成电路)类似，基于GaN的集成电路、单片集成霍尔效应和温度传感器的GaN功率晶体管、GaN栅极驱动器和ASIC的到来，将促进氮化镓技术在大量应用中的广泛使用。GaN智能功率集成电路技术(GaN SPICE)项目汇集了考文垂大学和格拉斯哥大学，对改变游戏规则的GaN智能功率集成技术进行研究、开发和功能验证；该集团将是世界上第一个将常断功率GaN HEMT与先进的电偶霍尔效应和温度传感器集成在一起的集团。HEMT是一种压控器件，其输出电流的片上监测对于电子系统的安全和长时间运行至关重要，类似于监测一个人的心率。电流传感器是一种GaN霍尔效应器件，配有信号调理电路(考文垂的专利申请号为1913936.9)，以最大限度地减少高温下传感器特性的漂移。这将增加功能，使系统体积缩小，降低组装成本，并且由于芯片温度可以被主动补偿，提高了电源设备的可靠性和效率。这些都是复杂电力电子系统的基本要求，特别是当安装在有限体积、恶劣(高温/振动)环境中时，例如电池电动汽车和混合动力汽车。考文垂和格拉斯哥拥有学术和研究人员的记录和专业知识，格拉斯哥的GaN Power HEMT和考文垂的GaN霍尔效应传感器，以及对其实验室设施(洁净室、设计、测试和表征实验室)的投资，使其成为英国和海外极少数能够在该开发的每个阶段提供创新的研究财团之一。

项目成果

Coil Design for Integration with GaN Hall-Effect Sensors

• DOI: 10.1109/wipdaeurope55971.2022.9936109
• 发表时间: 2022-09
• 期刊: 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
• 作者: V. Marsic;S. Faramehr;P. Igić

GaN Transistors' Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration

• DOI: 10.1109/access.2024.3357239
• 发表时间: 2024-01-01
• 期刊: IEEE ACCESS
• 影响因子: 3.9
• 作者: Marsic，Vlad;Faramehr，Soroush;Igic，Petar
• 通讯作者: Igic，Petar

Investigation on Single and Split Output Gate Configurations Influence on the GaN-HEMTs Switching Behaviours

• DOI: 10.23919/epe23ecceeurope58414.2023.10264283
• 发表时间: 2023-09
• 期刊: 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
• 作者: Xuyang Lu;A. Videt;N. Idir;V. Marsic;P. Igic;S. Faramehr

Understanding the limits of a hall sensor sensitivity for integration on a GaN power transistor chip: experiments with market available components

了解集成在 GaN 功率晶体管芯片上的霍尔传感器灵敏度的限制：使用市场上可用的组件进行实验

• DOI: 10.1049/icp.2023.2022
• 发表时间: 2023
• 作者: Marsic V

Influence of Current Collapse due to $V_{ds}$ Bias Effect on GaN-HEMTs $I_{d}-V_{ds}$ Characteristics in Saturation Region

• 发表时间: 2022-09
• 期刊: 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)
• 作者: Xuyang Lu;A. Videt;Ke Li;S. Faramehr;P. Igić;N. Idir