Probing the States of Single Molecules for Sensing and Multi-value Memory Applications

探测传感和多值存储器应用的单分子状态

基本信息

  • 批准号:
    EP/V048341/1
  • 负责人:
  • 金额:
    $ 201.46万
  • 依托单位:
  • 依托单位国家:
    英国
  • 项目类别:
    Research Grant
  • 财政年份:
    2022
  • 资助国家:
    英国
  • 起止时间:
    2022 至 无数据
  • 项目状态:
    未结题

项目摘要

Flash memories are used to store phone numbers, music, pictures and videos in mobile phones and are also frequently now used in place of magnetic hard disks in laptop computers. Such memories are non-volatile retaining information even if a battery looses all charge. Consumers constantly want more memory on their portable electronic devices to allow more video and music to be stored but flash memory is already close to the scaling limits preventing significant increases to memory sizes in the future. A flash memory consists of a floating gate charge node where the a single bit of digital information is stored as a "1" when the node is charged and "0" when the node is discharged. As the floating gate is reduced in size, there are more errors when electrons leak out of or onto the floating gate. These errors result from variation in floating gate size by just a few atomic layers which are sufficient to substantially change the applied voltage required to tunnel electrons onto or off the floating gate. This limit has been reached with present production.Our approach to improve flash memory and allow smaller memories is to use molecules which are produced chemically to allow charges to be stored as the digital memory and as the molecules are all identical, they do not suffer the same variability errors as the present silicon floating gate flash memories. Out ultimate aim is to use single molecules to enable further scaling thereby aiming to increase the amount of memory available in the future. We will also investigate molecules that can store more than "0" and "1" known as multi-valued memory. This multi-valued memory approach allows more bits to be stored on a single floating gate thereby allowing higher memory density expanding further what could be stored on a mobile phone or laptop computer.The approach we are taking requires the ability to measure the state an electron occupies on a single molecule. Therefore the technique developed here could be used to measure the properties of single molecules. This has potential applications for measuring the electronic properties of single molecules directly allowing the full characterisation of the molecular levels which at present is difficult to achieve. We believe these techniques can benefit a wide range of researchers in chemistry, physics, materials science and engineering in achieving far cheaper characterisation of materials at the nanoscale.
闪存用于在手机上存储电话号码、音乐、图片和视频,现在也经常用来代替笔记本电脑的硬盘。这种存储器是非易失性的,即使电池失去所有电量也能保留信息。消费者总是希望在他们的便携式电子设备上有更多的内存,以便存储更多的视频和音乐,但闪存已经接近缩放极限,无法在未来显著增加内存大小。闪存由浮栅充电节点组成,当节点充电时,单个比特的数字信息存储为“1”,当节点放电时存储为“0”。随着浮栅尺寸的减小,电子从浮栅漏出或漏到浮栅上时产生的误差更大。这些误差是由浮栅尺寸的变化引起的,仅仅几个原子层的变化就足以实质性地改变电子进入或离开浮栅所需的施加电压。目前的生产已经达到了这个极限。我们改进闪存和允许更小的存储器的方法是使用化学产生的分子来允许电荷存储为数字存储器,并且由于分子都是相同的,它们不会像现在的硅浮栅闪存那样遭受相同的可变性误差。我们的最终目标是使用单分子来实现进一步的扩展,从而增加未来可用的内存量。我们还将研究可以存储超过“0”和“1”的分子,称为多值存储器。这种多值存储方法允许在单个浮动门上存储更多的比特,从而允许更高的存储密度进一步扩展可以存储在移动电话或笔记本电脑上的存储。我们采用的方法需要能够测量电子在单个分子上所处的状态。因此,这里开发的技术可以用来测量单个分子的性质。这在直接测量单个分子的电子特性方面具有潜在的应用,允许对目前难以实现的分子水平进行全面表征。我们相信这些技术可以使化学、物理、材料科学和工程领域的广泛研究人员受益,从而在纳米尺度上实现更便宜的材料表征。

项目成果

期刊论文数量(3)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Reducing Systematic Uncertainty in Computed Redox Potentials for Aqueous Transition-Metal-Substituted Polyoxotungstates.
  • DOI:
    10.1021/acs.inorgchem.3c01115
  • 发表时间:
    2023-08-07
  • 期刊:
  • 影响因子:
    4.6
  • 作者:
    Thompson, Jake A.;Gonzalez-Cabaleiro, Rebeca;Vila-Nadal, Laia
  • 通讯作者:
    Vila-Nadal, Laia
Computation of 31P NMR chemical shifts in Keggin-based lacunary polyoxotungstates.
基于 Keggin 的空位多钨酸盐中 31P NMR 化学位移的计算。
  • DOI:
    10.1039/d3dt02694a
  • 发表时间:
    2024
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Thompson JA
  • 通讯作者:
    Thompson JA
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Douglas Paul其他文献

Decoupling the dark count rate contributions in Ge-on-Si single photon avalanche diodes
解耦硅基硅单光子雪崩二极管中的暗计数率贡献
  • DOI:
  • 发表时间:
    2024
  • 期刊:
  • 影响因子:
    0
  • 作者:
    D. Dumas;C. Coughlan;Charles Smith;Muhammad M A Mirza;J. Kirdoda;Fiona Fleming;C. McCarthy;Hannah Mowbray;Xin Yi;Lisa Saalbach;Gerald Buller;Douglas Paul;Ross Millar
  • 通讯作者:
    Ross Millar
Ge-on-Si single photon avalanche diode performance enhancement with photonic crystal nano-hole arrays
利用光子晶体纳米孔阵列增强硅基硅单光子雪崩二极管性能
  • DOI:
  • 发表时间:
    2024
  • 期刊:
  • 影响因子:
    0
  • 作者:
    C. McCarthy;Charles Smith;Hannah Mowbray;Douglas Paul;Ross Millar
  • 通讯作者:
    Ross Millar

Douglas Paul的其他文献

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{{ truncateString('Douglas Paul', 18)}}的其他基金

Chip-scale Atomic Systems for a Quantum Navigator
用于量子导航器的芯片级原子系统
  • 批准号:
    EP/X012689/1
  • 财政年份:
    2023
  • 资助金额:
    $ 201.46万
  • 项目类别:
    Research Grant
A Chip-Scale 2-Photon Rubidium Atomic Clock
芯片级 2 光子铷原子钟
  • 批准号:
    EP/Y00485X/1
  • 财政年份:
    2023
  • 资助金额:
    $ 201.46万
  • 项目类别:
    Research Grant
Squeezed Light quAntum MEMS Gravimeter - SLAM Gravimeter
挤压光量子MEMS重力仪-SLAM重力仪
  • 批准号:
    EP/R043590/1
  • 财政年份:
    2018
  • 资助金额:
    $ 201.46万
  • 项目类别:
    Research Grant
gMOT: Scaleable manufacture and evaluation of miniature cold atom traps
gMOT:微型冷原子陷阱的可扩展制造和评估
  • 批准号:
    EP/R021325/1
  • 财政年份:
    2017
  • 资助金额:
    $ 201.46万
  • 项目类别:
    Research Grant
DIFFRACT - Integrated Distributed Feedback Lasers for Cold Atom Technologies
DIFFRACT - 用于冷原子技术的集成分布式反馈激光器
  • 批准号:
    EP/R001529/1
  • 财政年份:
    2017
  • 资助金额:
    $ 201.46万
  • 项目类别:
    Research Grant
Engineering Quantum Technology Systems on a Silicon Platform
在硅平台上设计量子技术系统
  • 批准号:
    EP/N003225/1
  • 财政年份:
    2015
  • 资助金额:
    $ 201.46万
  • 项目类别:
    Fellowship
Room Temperature Terahertz Quantum Cascade Lasers on Silicon Substrates
硅衬底上的室温太赫兹量子级联激光器
  • 批准号:
    EP/H02364X/1
  • 财政年份:
    2010
  • 资助金额:
    $ 201.46万
  • 项目类别:
    Research Grant
Silicon Resonant Tunnelling Diodes and Circuits
硅谐振隧道二极管和电路
  • 批准号:
    EP/G038961/1
  • 财政年份:
    2009
  • 资助金额:
    $ 201.46万
  • 项目类别:
    Research Grant

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