Diamond Devices for extreme applications

适用于极端应用的金刚石装置

• 批准号: EP/X00029X/1
• 负责人: Richard Jackman
• 金额: $ 100.79万
• 依托单位: University College London
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FX00029X%2F1
• 关键词: Diamond; Devices; extreme; applications

The underlying remarkable material properties of diamond offer the prospect for semiconductor devices with extraordinary potential in high power applications, as well as those requiring operation at high temperature and in high radiation environments. However, despite their tremendous potential, the progress in developing diamond high voltage devices has been severely impeded by challenges associated with the availability of good quality substrates, limitations in thick and high quality epilayer growth and advanced device processing technologies . Moreover, advances have been additionally hampered by the lack of shallow n-type dopant species. However, recent progress by the applicants in developing diamond technologies make these above listed challenges considerably reduced enabling further advances in pursuit of developing high power diamond electronics. In this context, the applicants' recent discovery of the highly novel steady state deep-depletion concept for diamond devices opens routes for further advancements in the field of diamond power devices; critically, deep-depletion devices remove the need for an n-type doping. Vertical Deep-Depletion (D2) Diamond MOSFETs and Trench MOS Schottky barrier diodes (TMBS) will be realised offering exceptional performance in terms of power handling capability, size, switching frequency and thermal-radiation resilience. Developing more energy-efficient high-power devices will lead to efficient power converters, key for the drive to more efficient power generation and distribution systems within the context of the low carbon economy. However, additionally, diamond devices proposed will be that these devices can tolerate extreme operational environments and offer enormous potential in key sectors such as automotive, aerospace, and nuclear industrial sectors.

金刚石的潜在的显著的材料性质为在高功率应用中具有非凡潜力的半导体器件以及那些需要在高温和高辐射环境下操作的半导体器件提供了前景。然而，尽管它们具有巨大的潜力，但开发金刚石高压器件的进展受到与优质衬底的可用性、厚且高质量外延层生长的限制以及先进器件加工技术相关的挑战的严重阻碍。此外，进展还受到缺乏浅n型掺杂剂物质的阻碍。然而，申请人在开发金刚石技术方面的最新进展使得上述这些挑战大大减少，从而能够在追求开发高功率金刚石电子器件方面取得进一步进展。在这种情况下，申请人最近发现的用于金刚石器件的高度新颖的稳态深度耗尽概念为金刚石功率器件领域的进一步发展开辟了道路;关键的是，深度耗尽器件消除了对n型掺杂的需要。垂直深耗尽（D2）金刚石MOSFET和沟槽MOS肖特基势垒二极管（TMBS）将在功率处理能力、尺寸、开关频率和热辐射弹性方面提供卓越的性能。开发更节能的大功率设备将导致高效的功率转换器，这是在低碳经济背景下推动更高效的发电和配电系统的关键。然而，此外，提出的金刚石器件将是这些器件可以耐受极端的操作环境，并在汽车，航空航天和核工业等关键领域提供巨大的潜力。