National Facility for High Resolution CL Analysis of Photovoltaic and Optoelectronic Devices

建立国家光伏光电器件高分辨率阴极发光分析设备。该设备将使大学和工业研究人员能够将发光与缺陷、微观结构和成分联系起来，直至纳米级。该设施将包括：氙气等离子体聚焦离子束（FIB）双光束扫描电子显微镜（SEM）上的CL。Xe FIB将用于从SEM-CL检测到的特征中提取薄片，用于高分辨率透射电子显微镜分析。CL在专用的扫描透射电子显微镜（STEM）上进行纳米级分析。该设施将是世界上独一无二的，并有助于保持英国在光伏和光电子设备开发方面的研究领先地位。

To establish a National Facility for High Resolution Cathodoluminescence (CL) analysis of photovoltaic and optoelectronic devices. The facility will enable university and industrial researchers to correlate luminescence with defects, microstructure and composition down to the nanoscale. The facility will comprise: 1. CL on a dual beam Scanning Electron Microscope (SEM) equipped with a Xenon plasma Focused Ion Beam (FIB). The Xe FIB will be used to extract lamellae from features detected in the SEM-CL for high resolution Transmission Electron Microscope analysis.2. CL on a dedicated Scanning Transmission Electron Microscope (STEM) for nanoscale analysis.The facility will be unique world-wide and help maintain the UK's position as a research leader in photovoltaic and optoelectronic device development.