Development of HV-CMOS sensor technology for future tracking applications

开发用于未来跟踪应用的 HV-CMOS 传感器技术

• 批准号: ST/L002361/1
• 负责人: Joost Vossebeld
• 金额: $ 20.42万
• 依托单位: University of Liverpool
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2014
• 资助国家: 英国
• 起止时间: 2014 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=ST%2FL002361%2F1
• 关键词: Development; HV; CMOS; sensor; technology

Integrated technologies will be employed more and more beyond the extremely high performance tracking applications that target the region nearest to the interaction point in collider physics experiments. The UK holds a strong leadership in the development and construction of intermediate and large area silicon strip detectors, with expertise ranging from sensor development and integrated circuit design to the engineering of complete detector systems. Investment in future technologies is essential to maintain this leadership. HV-CMOS is a very strong candidate to become one of the main technologies for high precision particle detection, because of its potential wide commercial availability, its cost effectiveness and its expected layout flexibility. Our proposal focuses on demonstrating these advantages and would be an important step to develop the ability in the UK to design custom detectors. This would be a key element in developing UK leadership in the application of this technology.

在对撞机物理实验中，将越来越多地采用集成技术，而不仅仅是针对距离相互作用点最近的区域的极高性能跟踪应用。英国在中大面积硅带探测器的开发和建造方面拥有强大的领导地位，拥有从传感器开发和集成电路设计到完整探测器系统工程的专业知识。对未来技术的投资对于保持这一领先地位至关重要。由于其潜在的广泛的商业应用、成本效益和预期的布局灵活性，HV-CMOS是非常有可能成为高精度粒子检测的主要技术之一。我们的提案重点展示了这些优势，并将是在英国发展设计定制探测器能力的重要一步。这将是发展英国在这项技术应用方面的领导地位的关键因素。

项目成果

Performance of the ATLASPix1 pixel sensor prototype in ams aH18 CMOS technology for the ATLAS ITk upgrade

• DOI: 10.1088/1748-0221/14/08/c08013
• 发表时间: 2019-08
• 期刊: Journal of Instrumentation
• 影响因子: 1.3
• 作者: M. Kiehn;A. Herkert;A. Weber;A. Schöning;A. Miucci;A. Fehr;C. Blattgerste;C. Grzesik;D. Sultan;D. Immig;D. Forshaw;D. Ferrere;D. Wiedner;E. Zaffaroni;E. Figueras;F. Ehrler;F. Lanni;G. Iacobucci;H. Augustin;H. Liu;H. Chen;I. Perić;J. Anders;J. Hammerich;J. Kröger;J. Vossebeld;K. Chen;L. Xu;L. Noehte;L. Huth;M. Vicente;M. Benoit;M. Weber;M. Prathapan;N. Berger;S. Dittmeier;S. Sevilla;S. Tang;T. Golling;W. Wu;W. Wong

Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

使用艾迈斯半导体 H35DEMO CMOS 探测器质子辐照后瞬态电流技术进行电荷收集表征

• DOI: 10.1088/1748-0221/13/10/p10004
• 发表时间: 2018
• 期刊: Journal of Instrumentation
• 影响因子: 1.3
• 作者: Anders J

E-TCT characterization of a thinned, backside biased, irradiated HV-CMOS pixel test structure

薄化、背面偏置、辐照 HV-CMOS 像素测试结构的 E-TCT 表征

• DOI: 10.1016/j.nima.2020.164949
• 发表时间: 2021
• 期刊: Accelerators, Spectrometers, Detectors and Associated Equipment
• 作者: Franks M

A Monolithic HV/HR-MAPS Detector with a Small Pixel Size of 50 µm x 50 µm for the ATLAS Inner Tracker Upgrade

用于 ATLAS 内部跟踪器升级的单片 HV/HR-MAPS 探测器，像素尺寸为 50 µm x 50 µm

• DOI: 10.22323/1.313.0039
• 发表时间: 2018
• 作者: Casanova Mohr R

Design and characterization of the monolithic matrices of the H35DEMO chip

H35DEMO 芯片单片矩阵的设计和表征

• DOI: 10.22323/1.313.0029
• 发表时间: 2018
• 作者: Casanova Mohr R