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New Power Device Architectures in Silicon

新型硅功率器件架构

基本信息

批准号：
1724376
负责人：
金额：
--
依托单位：
University of Cambridge
依托单位国家：
英国
项目类别：
Studentship
财政年份：
2016
资助国家：
英国
起止时间：
2016 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=studentship-1724376
关键词：
New Power Device Architectures Silicon

项目摘要

Silicon has dominated the power semiconductor device market for the past 60 years and today still accounts for over 99%. Power devices are an enabling technology to many electrical systems and are becoming increasingly significant as low-carbon energy sources usurp traditional fossil fuels. Development of renewable energy such as wind and solar, transportation including trains and electric cars and the development of the UK "smart grid" network, to name but a few applications, would not be possible without a highly efficient power device. Therefore, research to understand the behaviour of current silicon power devices in order to improve performance is highly relevant to today's society. Over the past 20 years there have been many developments in silicon devices including the invention of the 3D reduced surface field effect (RESURF) which broke the perceived classical limit of silicon, the trench gate IGBT which overcame the constraint presented by planar IGBTs by enhancing the PiN diode effect and the use of lateral device structures in high voltage integrated circuits as an alternative to discrete devices due to increased reliability, efficiency and a reduction in overall size.To build upon these developments, it is important that I first understand each power device in detail and this will form the initial stages of my PhD. Having narrowed my field to a particular application and device, I intend to develop accurate models in order to fully characterise the current device behaviour to enable further optimisation to occur. By employing some of the existing device concepts, I hope to design a new power device with improved performance and efficiency. Tests will be conducted using both simulation output and experimental data by manufacturing the device in silicon. It is hoped that, as a result of completing this research, the new design will contribute towards the ever growing need for efficient power devices across the wide breadth of industries.

在过去的60年里，硅一直主导着功率半导体器件市场，今天仍然占99%以上。电力设备是许多电力系统的一项使能技术，随着低碳能源取代传统化石燃料，电力设备变得越来越重要。风能和太阳能等可再生能源的发展、包括火车和电动汽车在内的交通运输以及英国“智能电网”网络的发展，仅举几例，如果没有高效的电力设备，就不可能实现。因此，了解当前硅功率器件的行为以提高性能的研究与当今社会高度相关。在过去的20年里，硅器件有了许多发展，包括3D降低表面场效应（RESURF）的发明，它打破了硅的经典极限，沟槽栅IGBT通过增强PiN二极管效应克服了平面IGBT所呈现的约束，并且由于增加的电容而在高压集成电路中使用横向器件结构作为分立器件的替代，可靠性，效率和整体尺寸的减小。为了在这些发展的基础上，重要的是我首先要详细了解每个功率器件，这将成为我博士学位的初始阶段。在将我的领域缩小到特定的应用程序和设备之后，我打算开发准确的模型，以便完全模拟当前的设备行为，从而实现进一步的优化。通过采用一些现有的器件概念，我希望设计一种新的功率器件，提高性能和效率。测试将使用模拟输出和实验数据通过在硅中制造器件来进行。我们希望，作为完成这项研究的结果，新的设计将有助于在广泛的行业对高效功率器件不断增长的需求。