Atomic Resolution Structure and Spectroscopy of Semiconducting Nanowires

半导体纳米线的原子分辨率结构和光谱学

• 批准号: 1764986
• 金额: --
• 依托单位: University of Warwick
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2016
• 资助国家: 英国
• 起止时间: 2016 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-1764986
• 关键词: Atomic; Resolution; Structure; Spectroscopy; Semiconducting

Condensed matter: electronic structureThe field of semiconductor nanowires (NWs) has become one of the most active research areas in the nanoscience community in the last five years. Integration of semiconducting NWs with the well-established capabilities and low production cost of silicon is crucial for the implementation of novel quantum emitters, such as single photon sources on Si. Development of this area requires control of the nanowire structure with atomic precision, and this in turn is reliant on the ability to map structural and electronic properties with atomic resolution. With the recent advances in hardware, such as aberration correction, electron microscopy is the technique of choice to disentangle the structural properties of the material and correlate them with the functional ones. This project will involve the atomic scale characterisation of a range of semiconducting nanowires, supplied by our collaborators who are internationally leading nanowire growth experts. The successful applicant will be trained in the use of the doubly aberration corrected TEM/STEM at Warwick, the only such facility in the UK, which has the capability for sub-Å resolution imaging and spectroscopy. The aim will be to determine the atomic scale structure and composition of the nanowires, and to correlate these to changes in optical properties and electronic structure. Calculation of the critical dimensions for the plastic relaxation of axial heterostructures in nanowires is also anticipated. The candidate will be joining a group with an internationally-competitive electron microscopy facility with excellent specimen preparation and microscopy and many years of experience studying semiconductor materials. Strong collaboration with external partners at Universities (such as UCL, Sheffield and Lancaster universities) and semiconductor industries will be an essential part of the project.

凝聚态物质：电子结构半导体纳米线（NWs）领域已成为过去五年纳米科学界最活跃的研究领域之一。半导体纳米线与硅的成熟能力和低生产成本的集成对于实现新型量子发射器（例如硅上的单光子源）至关重要。该领域的发展需要以原子精度控制纳米线结构，而这又依赖于以原子分辨率映射结构和电子特性的能力。随着像差校正等硬件的最新进展，电子显微镜成为解开材料结构特性并将其与功能特性关联起来的首选技术。该项目将涉及一系列半导体纳米线的原子尺度表征，这些半导体纳米线由我们的合作者提供，他们是国际领先的纳米线生长专家。成功的申请人将在沃里克接受双像差校正 TEM/STEM 的使用培训，这是英国唯一的此类设施，具有亚埃分辨率成像和光谱能力。目的是确定纳米线的原子尺度结构和成分，并将其与光学特性和电子结构的变化联系起来。还预计计算纳米线轴向异质结构塑性松弛的临界尺寸。候选人将加入一个拥有具有国际竞争力的电子显微镜设备的团队，该设备拥有出色的样品制备和显微镜技术以及多年的半导体材料研究经验。与大学（如伦敦大学学院、谢菲尔德大学和兰卡斯特大学）和半导体行业的外部合作伙伴的密切合作将是该项目的重要组成部分。

项目成果

Hybrid III-V/IV Nanowires: High-Quality Ge Shell Epitaxy on GaAs Cores.

• DOI: 10.1021/acs.nanolett.8b02760
• 发表时间: 2018-09
• 期刊: Nano letters
• 影响因子: 10.8
• 作者: Haotian Zeng;Xuezhe Yu;Aruni Fonseka;James A. Gott;M. Tang;Yunyan Zhang;Giorgos Boras;Jia Xu;A. Sánchez;Huiyun Liu

Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement

• DOI: 10.1021/acsnano.9b01775
• 发表时间: 2019-05-01
• 期刊: ACS NANO
• 影响因子: 17.1
• 作者: Zhang, Yunyan;Davis, George;Liu, Huiyun
• 通讯作者: Liu, Huiyun

Growth and Fabrication of High-Quality Single Nanowire Devices with Radial p-i-n Junctions.

• DOI: 10.1002/smll.201803684
• 发表时间: 2018-12
• 期刊: Small
• 影响因子: 13.3
• 作者: Yunyan Zhang;A. Sánchez;M. Aagesen;S. Huo;H. Fonseka;James A. Gott;Dongyoung Kim;Xuezhe Yu;Xing-you Chen;Jia Xu;Tianyi Li;Haotian Zeng;Giorgos Boras;Huiyun Liu