RESEARCH ON RADIATION THERMOMETRY OF NEAR ROOM TEMPERATURE
RESEARCH ON RADIATION THERMOMETRY OF NEAR ROOM TEMPERATURE
批准号:
06650481
负责人:
IUCHI Tohru
金额:
$1.47万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1994
资助国家:
日本
项目状态:
已结题
起止时间:
1994 至 1995
中文摘要
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英文摘要
The key problems in radiation thermometry are the unknown emissivity of objects and the background noise from surroundings.The author developed a new method of radiation thermometry for low emissivity metals having normal emissivity less than 0.1 such as aluminum, cold rolled steel and stainless steel at temperature ranging from 310K to 370K.The method makes use of directional emissivity of metals and also of the specularly reflecting property of the metal surface at long wavelength of 8-10mum range.The author also developed a new radiation thermometer for the measurment of near roomtemperature with high signal-to-noise ratio (S/N). The thermometer which uses an HgCdTe semiconductor sensor, is compact and insensitive to tempetrature changes of the surroundings. Its major breakthrough owes much to the fact that the sensor is cooled and controlled by Peltier thermoelectric devices and that the sensor serves as reference radiator. A well designed optical system with a chopper and a concave mirror shuts off stray radiation, thus improving the S/N.
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古川 徹: "雰囲気調整加熱炉による放射率の精密測定" 第43回応用物理学関係連合講演会. B6. (1996)
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鶴川屋 智之: "放射率と酸化膜成長の同時測定法" 第43回応用物理学関係連合講演会. B5. (1996)
鹤川谷智之:“发射率和氧化膜生长的同时测量方法”第43届应用物理学会讲座B5。
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山本 広幸: "ゴニオフォトメータの試作とその放射測温への応用" 第34回SICE学術講演会. 301A-3. 757-758 (1995)
Hiroyuki Yamamoto:“测角光度计原型及其在辐射温度测量中的应用”第 34 届 SICE 学术会议(1995 年)。
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鶴川屋 智之: "放射率比変化を補正する新しい放射測温法" 第12回センシングフォーラム. 3-6. 79-84 (1995)
Tomoyuki Tsurukawaya:“修正发射率变化的新辐射测温方法”第 12 届传感论坛 79-84 (1995)。
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Tohru IUCHI and Aiji JONO: "New Radiation Thermometer for Near Room Temperature" Measurement, Journal of the International Measurement Confederation. Vol.16 No.4. 257-263 (1995)
Tohru IUCHI 和 Aiji JONO:“用于近室温的新型辐射温度计”测量,国际测量联合会杂志。
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共 20 条
Design and construction of radiation thermometry systems under extremely nonequilibrium temperature condition
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批准号:23560511
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.24万
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财政年份:2011
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负责人:IUCHI Tohru
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依托单位:
In-situ radiation thermometry of semiconductor materials and its calibration system
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批准号:20560403
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.91万
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财政年份:2008
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负责人:IUCHI Tohru
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依托单位:
Research of the in-situ temperature measurement system for silicon wafers.
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批准号:17560377
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.18万
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财政年份:2005
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负责人:IUCHI Tohru
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依托单位:
Study on the method for the measurements of both emissivity and temperature of semiconductor materials.
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批准号:15560364
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.05万
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财政年份:2003
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负责人:IUCHI Tohru
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依托单位:
Research on a method of temperature measurement for a silicon semiconductor wafer
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批准号:13650468
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.79万
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财政年份:2001
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负责人:IUCHI Tohru
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依托单位:
MODELING OF EMISSIVITIES OF METALS AND SEMICONDUCTORS
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批准号:10650416
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.86万
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财政年份:1998
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负责人:IUCHI Tohru
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依托单位:
海外基金