Metal-Free Carbon Nanotube Growth for Nanoelectronics Applications

用于纳米电子学应用的无金属碳纳米管生长

• 批准号: EP/D041759/1
• 负责人: Peter Ashburn
• 金额: $ 73.12万
• 依托单位: University of Southampton
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2006
• 资助国家: 英国
• 起止时间: 2006 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FD041759%2F1
• 关键词: Metal; Free; Carbon; Nanotube; Growth

The investigators at the University of Southampton have been combining expertise in SiGeC epitaxy in the School of Electronics & Computer Science with expertise in carbon nanotube growth in the School of Physics & Astronomy in a series of proof of principle experiments. These experiments have clearly demonstrated an entirely new method of producing carbon nanotubes using carbon implanted germanium quantum dots on silicon, which enables single and multi- walled carbon nanotubes to be grown without the need for metal catalysts. The absence of metal in the growth process is an important advantage for this new method because it will allow carbon nanotubes to be integrated on the same wafer as silicon nanoelectronics without introducing undesirable metallic contamination. This proposal brings together expertise in the materials science of carbon nanotubes at the University of Oxford with expertise in silicon processing and carbon nanotube growth at the University of Southampton. We seek to put our understanding of these exciting new results on a solid scientific foundation and at the same time to improve the yield, density and distribution of the nanotubes. The growth conditions will be systematically varied and a variety of characterisation techniques (Raman, SEM, TEM etc.) applied to characterise the nanotubes and identify the nature of the seeds. Carbon ion implantation and SiGe:C epitaxy will be compared as approaches for seeding the nanotube growth. If this latter approach is found to be effective, a growth process will be developed that allows the seed layers and the carbon nanotubes to be grown in a single step, thereby providing an attractive route to exploitation for our patented growth process. Finally, proof of principle electrical characterisation of the carbon nanotubes will be performed.

南安普顿大学的研究人员将电子与计算机科学学院在SiGeC外延方面的专业知识与物理与天文学院在碳纳米管生长方面的专业知识结合起来，进行了一系列原理证明实验。这些实验清楚地展示了一种利用硅上的碳植入锗量子点生产碳纳米管的全新方法，这种方法可以在不需要金属催化剂的情况下生长单壁和多壁碳纳米管。在生长过程中不含金属是这种新方法的一个重要优势，因为它将允许碳纳米管与硅纳米电子学集成在同一片晶圆上，而不会引入不良的金属污染。该提案将牛津大学的碳纳米管材料科学专业知识与南安普顿大学的硅加工和碳纳米管生长专业知识结合在一起。我们寻求将我们对这些令人兴奋的新结果的理解建立在坚实的科学基础上，同时提高纳米管的产量、密度和分布。生长条件将被系统地改变，各种表征技术（拉曼、扫描电镜、透射电镜等）将被应用于表征纳米管和识别种子的性质。将碳离子注入和SiGe:C外延作为播种纳米管生长的方法进行比较。如果发现后一种方法是有效的，将开发一种生长过程，使种子层和碳纳米管在一个步骤中生长，从而为开发我们的专利生长过程提供了一条有吸引力的途径。最后，将进行碳纳米管的原理电特性证明。

项目成果

Growth of Single-Walled Carbon Nanotubes Using Germanium Nanocrystals Formed by Implantation

• DOI: 10.1149/1.3147248
• 发表时间: 2009-01-01
• 期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
• 影响因子: 3.9
• 作者: Uchino, T.;Ayre, G. N.;Ashburn, P.
• 通讯作者: Ashburn, P.

Metal-Catalyst-Free Growth of Carbon Nanotubes and Their Application in Field-Effect Transistors

• DOI: 10.1149/1.3534829
• 发表时间: 2011-01-01
• 期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
• 作者: Uchino, T.;Ayre, G.;Ashburn, P.
• 通讯作者: Ashburn, P.

Metal-Catalyst-Free Growth of Silica Nanowires and Carbon Nanotubes Using Ge Nanostructures

使用 Ge 纳米结构无金属催化剂生长二氧化硅纳米线和碳纳米管

• DOI: 10.1143/jjap.50.04dn02
• 发表时间: 2011
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Uchino T