Feasibility of Novel Deca-nanometer vertical MOSFETs for low-cost Radio Frequency Application

新型十纳米垂直 MOSFET 用于低成本射频应用的可行性

• 批准号: EP/E012329/1
• 负责人: Peter Ashburn
• 金额: $ 82.6万
• 依托单位: University of Southampton
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2007
• 资助国家: 英国
• 起止时间: 2007 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FE012329%2F1
• 关键词: Feasibility; Novel; Deca; nanometer; vertical

Markets for radio frequency (RF) devices are various and cover ranges of low voltages (1.5, 3V etc.) for mobile applications. Conventionally, the devices required to build the front-end amplifiers are built within the same process as the digital CMOS circuitry which dominates the overall system realisation. The state-of the-art (SOA) CMOS processes are relatively expensive especially for lower volume production which is attractive to smaller companies and start-ups. Our proposal is to provide a high performance vertical MOSFET within a standard digital CMOS process such that the minimum feature size can be rather larger than SOA allowing a lower cost solution. The higher performance for the vMOST comes from the ease of producing a very short channel vertically using standard ion-implantation, rather than laterally which requires expensive patterning techniques (lithography). We have already shown the feasibility of a number of novel solutions to address some of the inherent propblems of vMOSTs. We believe that a high performance 0.1um vertical transistor with high gain and high operating voltage will be able to provide significant advantages for the market. Like all developments, it depends on the performance that can be achieved economically, and this is a key aim of this project. A sub- 0.1um transistor should exhibit an fT of around 100GHz and so provide useful power to over 10GHz. This would allow the replacement of GaAs and LDMOS devices in power stages of cellular and wireless LAN applications up to 5GHz. New connectivity and satellite uplink applications operate in frequencies up to 12GHz, and so the feasibility of the vertical MOSFET for this regime is a further objective.

射频（RF）设备的市场多种多样，涵盖了移动应用的低电压（1.5 v， 3V等）范围。传统上，构建前端放大器所需的器件是在与主导整个系统实现的数字CMOS电路相同的过程中构建的。最先进的（SOA） CMOS工艺相对昂贵，特别是对于小批量生产，这对小型公司和初创企业很有吸引力。我们的建议是在一个标准的数字CMOS工艺中提供一个高性能的垂直MOSFET，这样最小的特征尺寸可以比SOA更大，从而实现更低成本的解决方案。vMOST的更高性能来自于易于使用标准离子注入垂直产生非常短的通道，而不是需要昂贵的图像化技术（光刻）的横向通道。我们已经展示了解决vmost的一些固有问题的许多新颖解决方案的可行性。我们相信，具有高增益和高工作电压的高性能0.1um垂直晶体管将能够为市场提供显着优势。像所有的开发项目一样，它取决于经济上可以实现的性能，这是这个项目的一个关键目标。一个小于0.1um的晶体管应该显示出大约100GHz的fT，因此提供超过10GHz的有用功率。这将允许在高达5GHz的蜂窝和无线局域网应用的功率级中替换GaAs和LDMOS器件。新的连接和卫星上行应用的工作频率高达12GHz，因此垂直MOSFET的可行性是进一步的目标。