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OPTICAL ORIENTATION OF SPINS IN SEMICONDUCTORS USING THE FELIX AND FELBE FREE-ELECTRON LASER FACILITIES

OPTICAL ORIENTATION OF SPINS IN SEMICONDUCTORS USING THE FELIX AND FELBE FREE-ELECTRON LASER FACILITIES
使用 FELIX 和 FELBE 自由电子激光设备对半导体中的自旋进行光学定向
批准号:
EP/F021836/1
负责人:
Benedict Murdin
金额:
$22.73万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2007
资助国家:
英国
项目状态:
已结题
起止时间:
2007 至 --

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中文摘要
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英文摘要
Optical orientation of spins in semiconductors is a well established field that takes advantage of the selection rules for circularly polarised photon absorption. Using short pulsed lasers information can be gained on the spin dynamics and control. The proposal focusses mainly on narrow gap III-V semiconductors (NGSs) because they offer advantages for spintronic devices (i.e. devices that depend on the manipulation of spin rather than charge), due to their high mobility and strong relativistic effects that couple the spin and orbital motion. The fact that the materials of choice have small bandgap immediately indicates that far-infrared sources are required for excitation of spins from the valence band to the conduction band. In addition, in this wavelength range one can gain valuable information about dynamics using intraband excitation (e.g. of conduction electrons in doped samples) in both narrow and wide gap materials. Intraand excitation is important if e.g. photo-excited holes influence electron spin dynamics in interband experiments, or if the material under investigation has an indirect gap. This proposal is based on collaboration between groups at Surrey and Heriot-Watt Universities with combined experience in the use of Free Electron Laser (FEL) facilities in infrared and optical characterisation of ultrafast processes. We wish to hire a project student, based at Surrey, to study spin dynamics in bulk and quantum well (QW) structures of InSb and InAs at the FEL facilities, FELIX (at Utrecht) and FELBE (at Dresden). A key aspect of this activity will be the training and maintenance of expertise of UK personnel in the use of FEL facilities in preparation for the forthcoming Fourth Generation Light Source (4GLS) at Daresbury. The overall scientific objective is to resolve key issues related to spin manipulation (spin lifetime and spin relaxation). The programme will work closely with two partner institutions, Imperial College and QinetiQ (Malvern), who will provide a focused systematic set of NGS QW structures from parallel funded activities.
期刊论文(10)
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会议论文
Substantial Temperature Dependence of Transverse Electron g*-factor in Lead Chalcogenide Multi-quantum Wells
铅硫族化物多量子阱中横向电子 g* 因子的实质温度依赖性
DOI: 10.1063/1.3671728
发表时间: 2011
期刊:
影响因子: --
作者: [Leontiadou M]
通讯作者: Leontiadou M
Manipulation of Spin Dynamics in Semiconductor Structures by Orientation of Small External Magnetic Field
通过小外部磁场的定向操纵半导体结构中的自旋动力学
DOI: 10.1063/1.3666548
发表时间: 2011
期刊:
影响因子: --
作者: [Litvinenko K]
通讯作者: Litvinenko K
DOI: 10.1103/physrevb.78.205435
发表时间: 2008-09
期刊: Physical Review B
影响因子: 3.7
作者: [B.Wittmann;L.E.Golub;S.N.Danilov;J.Karch;C.Reitmaier;Z.D.Kvon;N.Q.Vinh;A. F. G. Meer;B.Murdin;S.D.Ganichev]
通讯作者: B.Wittmann;L.E.Golub;S.N.Danilov;J.Karch;C.Reitmaier;Z.D.Kvon;N.Q.Vinh;A. F. G. Meer;B.Murdin;S.D.Ganichev
Variable g-factor spin relaxation in InSb in an external magnetic field
InSb 在外部磁场中的可变 g 因子自旋弛豫
DOI: --
发表时间:
期刊:
影响因子: --
作者: [MA Leontiadou (Author)]
通讯作者: MA Leontiadou (Author)
8
    UK director of the Felix partnership
    • 批准号:
      EP/X020452/1
    • 项目类别:
      Research Grant
    • 资助金额:
      $16.53万
    • 财政年份:
      2023
    • 负责人:
      Benedict Murdin
    • 依托单位:
    Atomically Deterministic Doping and Readout For Semiconductor Solotronics (ADDRFSS)
    • 批准号:
      EP/M009564/1
    • 项目类别:
      Research Grant
    • 资助金额:
      $815.34万
    • 财政年份:
      2015
    • 负责人:
      Benedict Murdin
    • 依托单位:
    Coherent Optical and Microwave Physics for Atomic-Scale Spintronics in Silicon (COMPASSS)
    • 批准号:
      EP/H026622/1
    • 项目类别:
      Research Grant
    • 资助金额:
      $778.13万
    • 财政年份:
      2010
    • 负责人:
      Benedict Murdin
    • 依托单位:
    Silicon-based nanospintronics
    • 批准号:
      EP/H001905/1
    • 项目类别:
      Research Grant
    • 资助金额:
      $20.42万
    • 财政年份:
      2009
    • 负责人:
      Benedict Murdin
    • 依托单位:
    海外基金