OPTICAL ORIENTATION OF SPINS IN SEMICONDUCTORS USING THE FELIX AND FELBE FREE-ELECTRON LASER FACILITIES

使用 FELIX 和 FELBE 自由电子激光设备对半导体中的自旋进行光学定向

• 批准号: EP/F021836/1
• 负责人: Benedict Murdin
• 金额: $ 22.73万
• 依托单位: University of Surrey
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2007
• 资助国家: 英国
• 起止时间: 2007 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FF021836%2F1
• 关键词: OPTICAL; ORIENTATION; SPINS; SEMICONDUCTORS; USING

Optical orientation of spins in semiconductors is a well established field that takes advantage of the selection rules for circularly polarised photon absorption. Using short pulsed lasers information can be gained on the spin dynamics and control. The proposal focusses mainly on narrow gap III-V semiconductors (NGSs) because they offer advantages for spintronic devices (i.e. devices that depend on the manipulation of spin rather than charge), due to their high mobility and strong relativistic effects that couple the spin and orbital motion. The fact that the materials of choice have small bandgap immediately indicates that far-infrared sources are required for excitation of spins from the valence band to the conduction band. In addition, in this wavelength range one can gain valuable information about dynamics using intraband excitation (e.g. of conduction electrons in doped samples) in both narrow and wide gap materials. Intraand excitation is important if e.g. photo-excited holes influence electron spin dynamics in interband experiments, or if the material under investigation has an indirect gap. This proposal is based on collaboration between groups at Surrey and Heriot-Watt Universities with combined experience in the use of Free Electron Laser (FEL) facilities in infrared and optical characterisation of ultrafast processes. We wish to hire a project student, based at Surrey, to study spin dynamics in bulk and quantum well (QW) structures of InSb and InAs at the FEL facilities, FELIX (at Utrecht) and FELBE (at Dresden). A key aspect of this activity will be the training and maintenance of expertise of UK personnel in the use of FEL facilities in preparation for the forthcoming Fourth Generation Light Source (4GLS) at Daresbury. The overall scientific objective is to resolve key issues related to spin manipulation (spin lifetime and spin relaxation). The programme will work closely with two partner institutions, Imperial College and QinetiQ (Malvern), who will provide a focused systematic set of NGS QW structures from parallel funded activities.

半导体中自旋的光学取向是一个成熟的领域，它利用了圆偏振光子吸收的选择规则。使用短脉冲激光可以获得自旋动力学和控制方面的信息。该提案主要集中在窄隙III-V族半导体（NGS）上，因为它们为自旋电子器件（即依赖于自旋而不是电荷操纵的器件）提供了优势，这是由于它们的高迁移率和耦合自旋和轨道运动的强相对论效应。所选择的材料具有小的带隙的事实立即表明，需要远红外源来激发从价带到导带的自旋。此外，在这个波长范围内，人们可以获得有价值的信息动态使用带内激发（例如，在掺杂样品中的传导电子）在窄隙和宽隙材料。如果例如光激发空穴影响带间实验中的电子自旋动力学，或者如果所研究的材料具有间接间隙，则带内激发是重要的。该建议是基于萨里大学和赫瑞瓦特大学的小组之间的合作，在使用自由电子激光（FEL）设施的红外和光学特性的超快过程的综合经验。我们希望聘请一个项目的学生，在萨里，在自由电子激光设施，FELIX（在乌得勒支）和FELBE（在德累斯顿）研究在体和量子阱（QW）结构的InSb和InAs的自旋动力学。这项活动的一个关键方面将是培训和维护英国人员在使用自由电子激光设施方面的专业知识，为即将在达雷斯伯里进行的第四代光源（4GLS）做准备。总体科学目标是解决与自旋操纵（自旋寿命和自旋弛豫）有关的关键问题。该计划将与两个合作伙伴机构，帝国理工学院和QinetiQ（马尔文），谁将提供一个集中的NGS QW结构从平行资助活动的系统集密切合作。

项目成果

Substantial Temperature Dependence of Transverse Electron g*-factor in Lead Chalcogenide Multi-quantum Wells

铅硫族化物多量子阱中横向电子 g* 因子的实质温度依赖性

• DOI: 10.1063/1.3671728
• 发表时间: 2011
• 作者: Leontiadou M

Manipulation of Spin Dynamics in Semiconductor Structures by Orientation of Small External Magnetic Field

通过小外部磁场的定向操纵半导体结构中的自旋动力学

• DOI: 10.1063/1.3666548
• 发表时间: 2011
• 作者: Litvinenko K

Resonant circular photogalvanic effect in GaN/AlGaN heterojunctions

• DOI: 10.1103/physrevb.78.205435
• 发表时间: 2008-09
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: B.Wittmann;L.E.Golub;S.N.Danilov;J.Karch;C.Reitmaier;Z.D.Kvon;N.Q.Vinh;A. F. G. Meer;B.Murdin;S.D.Ganichev

Variable g-factor spin relaxation in InSb in an external magnetic field

InSb 在外部磁场中的可变 g 因子自旋弛豫

• 作者: MA Leontiadou (Author)

Circular photogalvanic effect in HgTe/CdHgTe quantum well structures

• DOI: 10.1088/0268-1242/25/9/095005
• 发表时间: 2010-02
• 期刊: Semiconductor Science and Technology
• 影响因子: 1.9
• 作者: B. Wittmann;S. Danilov;V. Bel'kov;S. Tarasenko;E. Novik;H. Buhmann;C. Brüne;L. Molenkamp;Z. Kvon;N. Mikhailov;S. Dvoretsky;N. Q. Vinh;A. V. D. van der Meer;B. Murdin;S. Ganichev