Atomically Deterministic Doping and Readout For Semiconductor Solotronics (ADDRFSS)

ADDRFSS计划的目的是利用确定性掺杂来探索量子信息技术、自旋电子学、光集成电子学和计量学的替代、破坏性硅基半导体器件范式的基本物理和加工要求。具体来说，我们将生产各种各样的“分子”和“晶格”结构，并将它们用于新物理和新设备，主要侧重于规模化和可制造性。半导体中的单个缺陷，以原子级精度放置，表明了新的量子和经典器件的巨大潜力，称为“solotronics”，但现在需要的是这种器件概念的实际实施。硅提供了一种令人兴奋的可能性，即使用由重叠杂质波函数排列而成的波函数作为原子尺度的功能器件组件，并且具有巨大知识库的关键优势。尽管大批量、低成本的CMOS研究并不是英国的优先事项，但任何新的量子技术都必须与之兼容，以实现与现有IC技术的工艺集成。通过提高我们在高通量掺杂方面的确定性掺杂能力，并扩大我们的化学特异性，以允许使用磁性掺杂剂和薄锗掺杂层，我们将生产出晶圆级尺寸和多种功能的器件。我们将开发的经典架构的一个例子是将尽可能小的硅器件与n(+)-n(++)-n晶体管的形式结合起来，其中有三个不同电离电位的供体（例如P-Sb-Bi等）。电流从左向右流动受阻，除非中央供体的电位降低到两端之间。在更基本的层面上，冷原子晶格中的人工固体由于其沿晶格传递量子信息和纠缠多个原子的能力而产生了巨大的兴奋。其目的是实现大规模量子计算机和量子模拟器在平衡和非平衡状态下（用于建模，例如高tc超导体的相变等，特别难以用经典计算机建模）。我们建议制造的硅“分子”和“固体”对于这些目的也很有吸引力，但有显著的好处：杂质可以被永久地捕获在硅“真空”中，并且可以通过扫描隧道显微镜获得波函数的直接图像，并且不需要复杂的光学和气体处理系统-由此产生的“冷冻”原子芯片是稳定的，具有固有的可扩展性，并且它们的成本将不可避免地下降，就像它们一直为半导体技术所做的那样。我们已经确定了主要的缺点（非辐射松弛）是可以克服的，我们的目标是用一个可扩展和电接触的系统来反映原子陷阱的发展，包括光刻图案的电线和通过扫描探针尖端。

The aim of the ADDRFSS Programme is to exploit deterministic doping to explore the fundamental physics and processing requirements of alternative, disruptive silicon-based semiconductor device paradigms for quantum information technologies, spintronics, optically integrated electronics and metrology. Specifically, we will produce a great variety of "molecule" and "lattice" structures, and exploit them for new physics and new devices with a major focus on scale-up and manufacturability. Single defects in semiconductors, placed with atomic-scale precision, have suggested enormous potential for new quantum and classical devices, termed "solotronics", but what is required now is practical implementation of such device concepts. Silicon offers the exciting possibility of using wavefunctions built up by arrangement of overlapping impurity wavefunctions as atomic-scale functional device components and has the crucial advantage of a huge knowledge base. Although high-volume, low-cost CMOS research is not a UK priority, any new quantum technologies must be compatible with it to enable process integration with existing IC technology. By advancing our deterministic doping capabilities for high throughput doping, and broadening our chemical specificity to allow use of magnetic dopants and thin germanium doped layers, we will produce devices of wafer-scale dimensions and diverse functionality.One example of the classical architectures we will develop will incorporate the smallest possible silicon devices with form of an n(+)-n(++)-n transistor, where there are three donors of different ionization potential (e.g. P-Sb-Bi etc). Current flow from left to right is blocked unless the potential of the central donor is lowered to be between that of the ends.At a more fundamental level, artificial solids in cold-atom lattices are generating great excitement due to their ability to transfer quantum information along the lattice, and to entangle multiple atoms. The aim is to realize large scale quantum computers and quantum simulators in and out of equilibrium (for modelling e.g. phase transitions in high-Tc superconductors etc that are particularly difficult to model with classical computers). The silicon "molecules" and "solids" we propose to build are also attractive for these purposes but with significant benefits: the impurities can be trapped inside a Si "vacuum" permanently and direct images of wavefunctions can be obtained with scanning tunnelling microscopy, and there is no need for elaborate optical and gas-handling systems - the resulting "frozen" atom chips are stable and inherently scalable and their costs will inevitably fall as they always have done for the semiconductor technology. We have established that the main disadvantage (non-radiative relaxation) is surmountable and we aim to mirror the atom-trap developments with a system that is scalable and electrically contactable, both with lithographically patterned wires and through scanning probe tips.