权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Atomically Deterministic Doping and Readout For Semiconductor Solotronics (ADDRFSS)

半导体 Solotronics 的原子确定性掺杂和读出 (ADDRFSS)

基本信息

批准号：
EP/M009564/1
负责人：
Benedict Murdin
金额：
$ 815.34万
依托单位：
University of Surrey
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2015
资助国家：
英国
起止时间：
2015 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FM009564%2F1
关键词：
Atomically Deterministic Doping Readout Semiconductor

项目摘要

The aim of the ADDRFSS Programme is to exploit deterministic doping to explore the fundamental physics and processing requirements of alternative, disruptive silicon-based semiconductor device paradigms for quantum information technologies, spintronics, optically integrated electronics and metrology. Specifically, we will produce a great variety of "molecule" and "lattice" structures, and exploit them for new physics and new devices with a major focus on scale-up and manufacturability. Single defects in semiconductors, placed with atomic-scale precision, have suggested enormous potential for new quantum and classical devices, termed "solotronics", but what is required now is practical implementation of such device concepts. Silicon offers the exciting possibility of using wavefunctions built up by arrangement of overlapping impurity wavefunctions as atomic-scale functional device components and has the crucial advantage of a huge knowledge base. Although high-volume, low-cost CMOS research is not a UK priority, any new quantum technologies must be compatible with it to enable process integration with existing IC technology. By advancing our deterministic doping capabilities for high throughput doping, and broadening our chemical specificity to allow use of magnetic dopants and thin germanium doped layers, we will produce devices of wafer-scale dimensions and diverse functionality.One example of the classical architectures we will develop will incorporate the smallest possible silicon devices with form of an n(+)-n(++)-n transistor, where there are three donors of different ionization potential (e.g. P-Sb-Bi etc). Current flow from left to right is blocked unless the potential of the central donor is lowered to be between that of the ends.At a more fundamental level, artificial solids in cold-atom lattices are generating great excitement due to their ability to transfer quantum information along the lattice, and to entangle multiple atoms. The aim is to realize large scale quantum computers and quantum simulators in and out of equilibrium (for modelling e.g. phase transitions in high-Tc superconductors etc that are particularly difficult to model with classical computers). The silicon "molecules" and "solids" we propose to build are also attractive for these purposes but with significant benefits: the impurities can be trapped inside a Si "vacuum" permanently and direct images of wavefunctions can be obtained with scanning tunnelling microscopy, and there is no need for elaborate optical and gas-handling systems - the resulting "frozen" atom chips are stable and inherently scalable and their costs will inevitably fall as they always have done for the semiconductor technology. We have established that the main disadvantage (non-radiative relaxation) is surmountable and we aim to mirror the atom-trap developments with a system that is scalable and electrically contactable, both with lithographically patterned wires and through scanning probe tips.

ADDRFSS计划的目的是利用确定性掺杂来探索量子信息技术，自旋电子学，光集成电子学和计量学的替代性，破坏性硅基半导体器件范例的基本物理和加工要求。具体来说，我们将生产各种各样的“分子”和“晶格”结构，并将其用于新物理和新器件，主要关注规模扩大和可制造性。半导体中的单个缺陷以原子级精度放置，表明了新型量子和经典器件（称为“Solotronics”）的巨大潜力，但现在需要的是此类器件概念的实际实施。硅提供了令人兴奋的可能性，使用由重叠杂质波函数排列而成的波函数作为原子级功能器件组件，并且具有巨大的知识库的关键优势。尽管大批量、低成本的CMOS研究不是英国的优先事项，但任何新的量子技术都必须与之兼容，以实现与现有IC技术的工艺集成。通过提高我们的高通量掺杂的确定性掺杂能力，并扩大我们的化学特异性，以允许使用磁性掺杂剂和薄锗掺杂层，我们将生产晶圆级尺寸和不同功能的器件。我们将开发的经典架构的一个例子是将尽可能小的硅器件与n（+）-n（++）-n晶体管的形式结合起来，其中存在三种不同电离电位的施主（例如P-Sb-Bi等）。在更基本的层面上，冷原子晶格中的人造固体由于其沿着晶格传递量子信息和纠缠多个原子的能力而产生巨大的兴奋。其目的是实现大规模量子计算机和量子模拟器在平衡和不平衡（用于建模，例如在高温超导体等相变，这是特别难以与经典计算机建模）。我们建议构建的硅“分子”和“固体”对于这些目的也很有吸引力，但具有显著的好处：杂质可以被永久地捕获在Si“真空”内并且可以用扫描隧道显微镜获得波函数的直接图像，而且不需要复杂的光学和气体处理系统--由此产生的“冻结”原子芯片是稳定的，并且固有地可扩展，并且它们的成本将不可避免地下降，就像它们总是为半导体技术所做的那样。我们已经建立了主要的缺点（非辐射弛豫）是可以克服的，我们的目标是反映原子阱的发展与系统，是可扩展的和电接触，无论是光刻图案化的电线，并通过扫描探针尖端。

项目成果

期刊论文数量（10）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Gating Classical Information Flow via Equilibrium Quantum Phase Transitions.

通过平衡量子相变门控经典信息流。

DOI：
10.1103/physrevlett.118.147203
发表时间：
2017
期刊：
Physical review letters
影响因子：
8.6
作者：
Banchi L
通讯作者：
Banchi L

Metrology of complex refractive index for solids in the terahertz regime using frequency domain spectroscopy

使用频域光谱测量太赫兹范围内固体的复折射率

DOI：
10.1088/1681-7575/aae2c9
发表时间：
2018
期刊：
Metrologia
影响因子：
2.4
作者：
Chick S
通讯作者：
Chick S

Observation of a different birefringence order at optical and THz frequencies in LBO crystal

DOI：
10.1016/j.optmat.2017.01.031
发表时间：
2017-04-01
期刊：
OPTICAL MATERIALS
影响因子：
3.9
作者：
Andreev, Yu. M.;Kokh, A. E.;Svetlichnyi, V. A.
通讯作者：
Svetlichnyi, V. A.

Coherent superpositions of three states for phosphorous donors in silicon prepared using THz radiation.

DOI：
10.1038/ncomms16038
发表时间：
2017-07-24
期刊：
Nature communications
影响因子：
16.6
作者：
Chick S;Stavrias N;Saeedi K;Redlich B;Greenland PT;Matmon G;Naftaly M;Pidgeon CR;Aeppli G;Murdin BN
通讯作者：
Murdin BN

Single Ion Implantation of Bismuth