Screen-Grid FET Fabrication / progressing pump priming project

提出了一种新颖的场效应晶体管结构，具有独特的三维门控结构-屏栅场效应晶体管（SGrFET）。在这种几何结构中，控制载流子在沟道中流动的栅极是垂直于电流的栅极圆柱体，这与栅极与沟道在同一平面的经典方法相反。对这种新型器件几何形状的模拟显示，在缩小到纳米尺度时保持了有希望的特性，并且还显示了逻辑应用的高单器件功能。此外，新颖的栅极几何形状（表面的孔）将有助于捕获分子，器件的场效应晶体管特性将放大所产生的信号。制造这种新型设备所需的一些制造步骤是不标准的，需要进行研究，以确保将来制造这种设备成为可能。这个研究项目就是为了这个目的而写的。在这个阶段，已经加工了少量的绝缘体上硅（SOI）晶片和测试晶片，以证明栅极孔制造的可行性。这里要求的资金将有助于将这批SGrFET推进到最后阶段。这将允许对制造问题的全面反馈，也将给出新设备的第一个实验结果。

A novel Field Effect Transistor structure was proposed with a peculiar 3D gating configuration - the Screen-Grid FET (SGrFET). In this geometry the gate, that controls the carriers flowing in the channel, are gate cylinders perpendicular to the current flow in contrast to the classical approach where the gate is in the same plane as the channel. Simulations on this novel device geometry show promising characteristics that are maintained whilst downscaling to the nanometer scale and also show a high one-device functionality for logic applications. Moreover the novel gate geometry - holes in the surface - would lend themselves to trapping molecules and the FET character of the device would amplify the resulting signal.Some of the fabrication steps needed to make this novel device are not standard and need to be investigated in order to ensure that making the devices will be possible in the future. The research project is written to that aim. At this stage a small amount of silicon on insulator (SOI) wafers and test wafers have been processed to show the feasibility of gate holes fabrication. The funding requested here will help to progress this batch to the final SGrFET stage. This will allow full feedback on fabrication issues and will also give the first experimental results on the novel device.