Upgrade of metal organic vapor phase epitaxy reactors for thermoelectric and magnetic semiconductor alloys and heterostructures

该设备提案要求提供资金，以便在蒙特利尔理工学院工程物理系完成金属-有机气相外延反应器(MOVPE)的建造，以生长磁性半导体合金(MSA)和低维热电(TE)结构。它还要求提供资金更换专用阀门，以确保这个新的和现有的MOVPE反应堆充分运行，该反应堆现已使用了17年以上。对于仍在建设中的MSA/TE反应堆，我们需要更换反应堆核心的“化学”真空泵，以及快速切换气体歧管的电子和计算机控制单元。这种控制对于在器件异质结构中提供尖锐的界面是必不可少的。我们还需要流量计，二进制浓度气体监测器，以及新的石英器和石墨电感。这个MSA/TE反应堆，部分由捐赠给我们实验室的旧NortelNetworks反应堆的部分建造而成，已经通过这种技术生产了第一批GaMnP/GAP(001)薄膜。我们要求的资金将通过增加新的有机金属管路来帮助升级和完成该反应堆，并提供必要的设备，以继续在我们的设施中充分运行两个反应堆。这些MOVPE系统是蒙特利尔薄膜集团(GCM)中央设施的一部分，补充了其许多成员在材料科学、半导体器件设计、制造和表征方面的专业知识。专门用于MSA/TE的新反应堆需要完成，它引入了磁性元素，如锰或VI柱元素，这些元素是与旧反应堆中开展的项目高度不相容的污染物。这两个系统都是III-V半导体晶体生长的广泛计划的核心，项目包括：(1)用于磁性和半导体异质结构输运的基础研究的MSA外延，(2)材料性质的基础研究，特别是那些受应变和应变弛豫影响的材料性质研究，包括稀氮化物和诸如量子点的降维结构，以及(3)新型电子、光电和热电设备的开发。

This equipment proposal requests funds to complete the construction of a metal-organic vapor phase epitaxy reactor (MOVPE) for the growth of magnetic semiconductors alloys (MSA) and low dimensional thermoelectric (TE) structures at the Department of Engineering Physics of the Ecole Polytechnique of Montreal. It also requests funds to replace specialty valves to ensure the adequate operation of both this new and the existing MOVPE reactor which has now more than 17 years of use. For the MSA/TE reactor still under construction we need replacing of the "chemical" vacuum pump at the reactor core, and the electronic and computer control units of the fast switching gas manifold. This control is essential to provide sharp interfaces in device heterostructures. We also need flow meters, a binary concentration gas monitor, and new quartz ware and graphite susceptors.  This MSA/TE reactor, partially built from parts of an old Nortelnetworks reactor donated to our laboratories, has already produced the first GaMnP/GaP(001) films by this technique. The funds we request will help upgrade and complete this reactor by the addition of new organometallic lines, as well as providing essential equipment to continue adequate operation of both reactors at our facilities. These MOVPE systems are part of the central facilities of the Montreal Thin Films Group (GCM) and complement the expertise in materials science, semiconductor device design, fabrication and characterization of many of its members. The new reactor dedicated to MSA/TE, which needs to be completed, introduces magnetic elements such as Mn, or column VI elements, which are contaminants highly incompatible with the projects carried out in the older reactor. Both systems are at the core of a broad program in III-V semiconductor crystal growth for projects on: (1) epitaxy of MSA for fundamental studies on transport in magnetic and semiconducting heterostructures, (2) fundamental studies of materials properties, in particular those which are affected by strain and strain-relaxation, including dilute nitrides and reduced dimensionality structures such as quantum dots and (3) novel electronic, optoelectronic, and thermoelectric device development.