Heterogeneous semiconductors: epitaxy and electronic properties
Heterogeneous semiconductors: epitaxy and electronic properties
批准号:
9387-2011
负责人:
Masut, Remo
金额:
$1.09万
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2013
资助国家:
加拿大
项目状态:
已结题
起止时间:
2013-01-01 至 2014-12-31
中文摘要
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英文摘要
In this proposal we focus on the vapor phase epitaxy (VPE) of heterogeneous magnetic semiconductors (MSC), such as GaP containig nanoclusters of MnP, and of quantum heterostructures (QHS) based on III-V compounds. Our main interests are to understand (i) the relationship between the inherent structure and the optical, magnetic and transport properties of the materials we grow, and (ii) how this structure is governed by the growth processes. It has recently been determined that the magnetic properties of heterogeneous MSC epilayers containing nanoclusters of magnetic materials depend on the size, crystallographic structure and orientation of the nanocluster inclusions, and protocols have been established to extract this information from the samples we grow. Yet, little is known on how to control the incorporation of these inclusions when growing from the vapor phase. Thus, one of our objectives is to establish the basic mechanisms controlling the structure by carefully designed growth experiments followed by detailed material characterization. This also applies to our ongoing study of strained QHS, including strained-layer supperlattices and stacks of layers of coherent quantum dots to which we will incorporate new dilute nitride for applications in IR photo detection, and films with nanometric inclusions for thermoelectric studies. We will grow these heterogeneous semiconductors in our laboratory, and for this purpose we have two dedicated metal organic VPE reactors where we can grow phosphides, arsenides, antimonides and dilute nitrides. We will fully characterize the epilayers ourselves or through a well established network of collaborators developed and maintained through many years. In particular, the carriers' lifetimes in many of these heterogeneous semiconductors have received little attention, yet they will be needed for applications in a variety of devices. Most of the work proposed is of a fundamental nature related to advanced materials, and devices, and it is expected to help establish the basic understanding needed for further advances in applications, such as the design of innovative devices for energy conversion and energy conservation, photon detection and optical isolation.
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Design, synthesis and advanced characterization of functional materials and devices
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批准号:RGPIN-2016-06417
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.4万
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财政年份:2019
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负责人:Masut, Remo
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依托单位:
Heterogeneous semiconductors: epitaxy and electronic properties
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批准号:9387-2011
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.09万
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财政年份:2015
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负责人:Masut, Remo
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依托单位:
Heterogeneous semiconductors: epitaxy and electronic properties
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批准号:9387-2011
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.09万
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财政年份:2014
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负责人:Masut, Remo
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依托单位:
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批准号:9387-2011
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.09万
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负责人:Masut, Remo
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依托单位:
Heterogeneous semiconductors: epitaxy and electronic properties
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批准号:9387-2011
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.09万
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财政年份:2011
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负责人:Masut, Remo
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依托单位:
Bandgap and wavefunction engineering of semiconductor heterostructures
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批准号:9387-2006
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项目类别:Discovery Grants Program - Individual
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资助金额:$4.3万
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财政年份:2010
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负责人:Masut, Remo
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依托单位:
Bandgap and wavefunction engineering of semiconductor heterostructures
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批准号:9387-2006
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项目类别:Discovery Grants Program - Individual
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资助金额:$4.3万
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财政年份:2009
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负责人:Masut, Remo
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依托单位:
Generation of thermoelectricity for autonomous heating systems
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批准号:336595-2006
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项目类别:Strategic Projects - Group
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资助金额:$6.9万
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财政年份:2008
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负责人:Masut, Remo
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依托单位:
Bandgap and wavefunction engineering of semiconductor heterostructures
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批准号:9387-2006
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项目类别:Discovery Grants Program - Individual
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资助金额:$4.3万
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财政年份:2008
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负责人:Masut, Remo
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依托单位:
Generation of thermoelectricity for autonomous heating systems
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批准号:336595-2006
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项目类别:Strategic Projects - Group
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资助金额:$8.61万
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财政年份:2007
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负责人:Masut, Remo
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依托单位:
Bandgap and wavefunction engineering of semiconductor heterostructures
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批准号:9387-2006
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项目类别:Discovery Grants Program - Individual
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资助金额:$4.3万
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财政年份:2007
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负责人:Masut, Remo
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依托单位:
Generation of thermoelectricity for autonomous heating systems
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批准号:336595-2006
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项目类别:Strategic Projects - Group
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资助金额:$7.23万
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财政年份:2006
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负责人:Masut, Remo
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依托单位:
Bandgap and wavefunction engineering of semiconductor heterostructures
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批准号:9387-2006
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项目类别:Discovery Grants Program - Individual
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资助金额:$4.3万
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财政年份:2006
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负责人:Masut, Remo
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依托单位:
Upgrade of metal organic vapor phase epitaxy reactors for thermoelectric and magnetic semiconductor alloys and heterostructures
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批准号:345592-2007
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项目类别:Research Tools and Instruments - Category 1 (<$150,000)
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资助金额:$10.05万
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财政年份:2006
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负责人:Masut, Remo
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依托单位:
Vapor phase exitaxy of III-V semiconductor heterostinctures on compliant substracts
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批准号:9387-2001
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.77万
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财政年份:2005
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负责人:Masut, Remo
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依托单位:
Vapor phase exitaxy of III-V semiconductor heterostinctures on compliant substracts
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批准号:9387-2001
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.77万
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财政年份:2004
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负责人:Masut, Remo
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依托单位:
Vapor phase exitaxy of III-V semiconductor heterostinctures on compliant substracts
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批准号:9387-2001
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.77万
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财政年份:2003
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负责人:Masut, Remo
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依托单位:
Vapor phase exitaxy of III-V semiconductor heterostinctures on compliant substracts
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批准号:9387-2001
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项目类别:Discovery Grants Program - Individual
-
资助金额:$2.77万
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财政年份:2002
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负责人:Masut, Remo
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依托单位:
Vapor phase exitaxy of III-V semiconductor heterostinctures on compliant substracts
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批准号:9387-2001
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.77万
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财政年份:2001
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负责人:Masut, Remo
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依托单位:
Urgent repair and upgrade of existing metal-organic vapor phase epitaxy system
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批准号:241149-2001
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项目类别:Research Tools and Instruments - Category 1 (<$150,000)
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资助金额:$10.89万
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财政年份:2000
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负责人:Masut, Remo
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依托单位:
海外基金