Heterogeneous semiconductors: epitaxy and electronic properties

异质半导体：外延和电子特性

• 批准号: 9387-2011
• 负责人: Masut, Remo
• 金额: $ 1.09万
• 依托单位: École Polytechnique de Montréal
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2014
• 资助国家: 加拿大
• 起止时间: 2014-01-01 至 2015-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=544634
• 关键词: Heterogeneous; semiconductors; epitaxy; electronic; properties

In this proposal we focus on the vapor phase epitaxy (VPE) of heterogeneous magnetic semiconductors (MSC), such as GaP containig nanoclusters of MnP, and of quantum heterostructures (QHS) based on III-V compounds. Our main interests are to understand (i) the relationship between the inherent structure and the optical, magnetic and transport properties of the materials we grow, and (ii) how this structure is governed by the growth processes. It has recently been determined that the magnetic properties of heterogeneous MSC epilayers containing nanoclusters of magnetic materials depend on the size, crystallographic structure and orientation of the nanocluster inclusions, and protocols have been established to extract this information from the samples we grow. Yet, little is known on how to control the incorporation of these inclusions when growing from the vapor phase. Thus, one of our objectives is to establish the basic mechanisms controlling the structure by carefully designed growth experiments followed by detailed material characterization. This also applies to our ongoing study of strained QHS, including strained-layer supperlattices and stacks of layers of coherent quantum dots to which we will incorporate new dilute nitride for applications in IR photo detection, and films with nanometric inclusions for thermoelectric studies. We will grow these heterogeneous semiconductors in our laboratory, and for this purpose we have two dedicated metal organic VPE reactors where we can grow phosphides, arsenides, antimonides and dilute nitrides. We will fully characterize the epilayers ourselves or through a well established network of collaborators developed and maintained through many years. In particular, the carriers' lifetimes in many of these heterogeneous semiconductors have received little attention, yet they will be needed for applications in a variety of devices. Most of the work proposed is of a fundamental nature related to advanced materials, and devices, and it is expected to help establish the basic understanding needed for further advances in applications, such as the design of innovative devices for energy conversion and energy conservation, photon detection and optical isolation.

在这个提议中，我们专注于异质磁性半导体（MSC）的气相外延（VPE），如GaP含有纳米团簇的MnP，和基于III-V族化合物的量子异质结构（QHS）。我们的主要兴趣是了解（i）我们生长的材料的固有结构与光学、磁性和输运性质之间的关系，以及（ii）这种结构如何受到生长过程的影响。 最近已经确定，含有磁性材料的纳米团簇的异质MSC外延层的磁性取决于纳米团簇夹杂物的尺寸、晶体结构和取向，并且已经建立了从我们生长的样品中提取该信息的协议。然而，很少有人知道如何控制这些夹杂物的掺入时，从气相生长。 因此，我们的目标之一是通过精心设计的生长实验，然后进行详细的材料表征，建立控制结构的基本机制。 这也适用于我们正在进行的应变QHS研究，包括应变层超晶格和相干量子点层的堆叠，我们将在IR光检测中应用新的稀氮化物，以及热电研究的纳米夹杂物薄膜。 我们将在我们的实验室中生长这些异质半导体，为此，我们有两个专用的金属有机VPE反应器，我们可以在那里生长磷化物，砷化物，锑化物和稀氮化物。我们将自己或通过多年来开发和维护的完善的合作者网络对外延层进行全面表征。 特别是，在许多这些异质半导体中的载流子寿命很少受到关注，但它们将被需要用于各种设备中的应用。 所提出的大部分工作都是与先进材料和器件有关的基本性质，预计将有助于建立进一步推进应用所需的基本理解，例如设计用于能量转换和节能、光子探测和光学隔离的创新器件。