Development of efficient all silicon optoelectronic devices based on silicon nanocrystal technology

有效地从硅中产生光将对光电子和微电子的集成产生相当大的影响。从这个角度来看，基于硅纳米晶体（Si-nc）的硅纳米光子学是一种很有前途的技术，它在物理上是相对容易理解的，并且已经证明了实际发光水平的产生。这项技术现在正面临着与它在现实世界的光电应用中使用相关的问题，这些应用总是涉及开发基于硅-nc的激光器件。硅纳米光子学研究的两个重要挑战是Si-nc/ sio2层光学增益的增加和Si-nc电子激发的有效电流注入（电致发光，EL）。基于我们团队在过去几年中对通过离子注入获得的si -nc发光特性的知识和专业知识，我们提出的研究目标是在全si结构中获得显着的光学增益，并开发新的方法来实现高效的电致发光。1)基于Si-nc分布的知识，利用计算机编码对传播介质的光学特性进行建模，设计Bragg型结构以优化器件中的光学增益。2)我们将研究Si-nc生长条件和与传播介质相关的参数（厚度、形状、Si-nc浓度和分布）对光学增益的影响。3)将测试基于供体-受体水平的物种共植入的制造方法，以促进电荷注入，从而实现高效的EL。4)有了足够的光学增益，并通过制造亚波长周期结构形成谐振腔，我们将尝试制造全硅激光器。5)研究这些器件的激光特性和Si-nc特性。虽然硅基激光器件的发展还不确定，但从这项研究中获得的知识肯定会导致，例如，基于硅的廉价宽带光放大介质的发展，在许多应用领域都很有用。

Efficiently producing light from silicon would have a considerable impact on the integration of optoelectronicsand micro-electronics. From this point of view, Si nanophotonics based on the use of silicon nanocrystals(Si-nc) is a promising technology that is physically relatively well understood and that has demonstrated thegeneration of practical levels of luminescence. This technology is now confronting issues related to its use inreal world opto-electronic applications which invariably involve developing Si-nc based laser devices. Twoimportant challenges in the research on Si nanophotonics are the increase of the optical gain in the Si-nc/SiO2layer and an efficient current injection for electron excitation of the Si-nc (electroluminescence, EL). Based onthe knowledge and expertise our team has acquired over the past few years on the luminescence properties ofSi-nc obtained by ion implantation, the objective of the proposed research is to achieve significant optical gainin an all-Si structure and develop new ways to achieve efficient electroluminescence. 1) Using a computer codeto model the optical properties of the propagating medium based on our knowledge of the Si-nc distribution,Bragg type structures will be designed to optimize the optical gain in the device. 2) We will investigate theeffect on optical gain of the Si-nc growth conditions and the parameters associated with the propagatingmedium (thickness, shape, Si-nc concentration and distribution). 3) Fabrication methods based on theco-implantation of species that produce donor-acceptor levels will be tested in order to promote chargeinjection in order to achieve efficient EL. 4) With sufficient optical gain and by fabricating sub-wavelengthperiodic structure to form a resonant cavity, we will attempt the fabrication of an all-silicon laser. 5) The lasingproperties and Si-nc characteristics of these devices will be investigated. Although the development of Si-ncbased laser devices is not assured, the knowledge acquired from this research will certainly lead, for example,to the development of a cheap broadband optical amplification medium based on silicon, useful in many fieldsof application.