Development of efficient all silicon optoelectronic devices based on silicon nanocrystal technology

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Efficiently producing light from silicon would have a considerable impact on the integration of optoelectronicsand micro-electronics. From this point of view, Si nanophotonics based on the use of silicon nanocrystals(Si-nc) is a promising technology that is physically relatively well understood and that has demonstrated thegeneration of practical levels of luminescence. This technology is now confronting issues related to its use inreal world opto-electronic applications which invariably involve developing Si-nc based laser devices. Twoimportant challenges in the research on Si nanophotonics are the increase of the optical gain in the Si-nc/SiO2layer and an efficient current injection for electron excitation of the Si-nc (electroluminescence, EL). Based onthe knowledge and expertise our team has acquired over the past few years on the luminescence properties ofSi-nc obtained by ion implantation, the objective of the proposed research is to achieve significant optical gainin an all-Si structure and develop new ways to achieve efficient electroluminescence. 1) Using a computer codeto model the optical properties of the propagating medium based on our knowledge of the Si-nc distribution,Bragg type structures will be designed to optimize the optical gain in the device. 2) We will investigate theeffect on optical gain of the Si-nc growth conditions and the parameters associated with the propagatingmedium (thickness, shape, Si-nc concentration and distribution). 3) Fabrication methods based on theco-implantation of species that produce donor-acceptor levels will be tested in order to promote chargeinjection in order to achieve efficient EL. 4) With sufficient optical gain and by fabricating sub-wavelengthperiodic structure to form a resonant cavity, we will attempt the fabrication of an all-silicon laser. 5) The lasingproperties and Si-nc characteristics of these devices will be investigated. Although the development of Si-ncbased laser devices is not assured, the knowledge acquired from this research will certainly lead, for example,to the development of a cheap broadband optical amplification medium based on silicon, useful in many fieldsof application.