Crystal growth equipment for novel materials for spintronics

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Major efforts are currently underway on utilizing the spin- and charge degrees of freedom of an electron at the same time, as this great promises for building devices.  An everyday example of such a spintronic device is the magnetoresistive resistive read head used in todays harddrives.  In order to make further progress in tailoring materials for spintronic, we need to achieve a better understanding of how magnetic moments are formed in low carrier density systems. As this makes it possible to tune the magnetic and electric properties  of a compound at the same time. While we have today a good understanding on how magnetic moments are formed when they are well localized, our understanding is much less complete when the magnetism arises from the spin-polarization of different parts of the Fermi surface. For gaining this understanding good model systems are needed. With this proposal we plan to buy two essential components for the synthesis of FeGe which we consider as an excellent model compound for studying the underlying physics of spintronic materials.